IL4208 SIEMENS | Alldatasheet

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Technical content

5–146

DESCRIPTION

The IL4208 consists of a GaAs IRLED optically coupled to a photosensi- tive non-zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconduc- tors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction. High input sensitivity is achieved by using an emitter follower pho- totransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2 mA (DC). The IL4208 uses two discrete SCRs resulting in a commutating dV/dt greater than 10 KV/ m s. The use of a proprietary dv/dt clamp results in a static dV/dt of greater than 10KV/ m s. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the pho- totransistor, disabling the first stage SCR predriver. The 800V blocking voltage permits control of off-line voltages up to 240VAC, with a safety factor of more than two, and is sufficient for as much as 380VAC. The IL4208 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, sole- noids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equip- ment, and consumer appliances. Package Dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID. 654 123 18° typ. .300 (7.62) .347 (8.82) typ. Triac MT1 Triac MT2 Substrate do not connect LED Anode LED Cathode NC

FEATURES

  • High Input Sensitivity, I FT =2 mA
  • Blocking Voltage, 800 V
  • Isolation Test Voltage 5300 VAC RMS
  • 300 mA On-state Current
  • High Static dv/dt 10,000 V/Ms
  • Inverse Parallel SCRs Provide
  • Commutating dv/dt >2K V/ m s
  • Very Low Leakage <10 m A
  • Small 6-Pin DIP Package
  • Underwriters Lab File #E52744
  • VDE 0884 Available with Option 1 Maximum Ratings Emitter C/W Derate from 25 C Detector C/W Derate from 25 C Package Isolation Test Voltage (between emitter and detector, climate per DIN 40046, RMS 7 mm 7 mm Comparative Tracking Index per DIN IEC 112/VDE 0303 part 1, Group IIIa per Isolation Resistance V IO =500 V, T A =25 W V IO =500 V, T A =100 W C to +125 C C to +100 C Soldering Temperature (max. 10 sec.dip soldering C IL4208

800 V TRIAC DRIVER OPTOCOUPLER

5–147 IL4208

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1.16 1.35 V I F =10 mA Reverse Current I R 0.1 10 m AV R =6 V Capacitance C 40 pF V F =0 V, f=1 MHz Thermal Resistance, Junction to Lead R THJL 750 C/W Output Detector Repetitive Peak Off-state Voltage V DRM

800 V I

=100 m A Repetitive Peak Reverse Voltage V RRM =100 m A Off-state Voltage V D(RMS)

565 V I

D(RMS) =70 m A Reverse Voltage V R R(RMS) =70 m A Off-state Current I D(RMS) 10 100 m AV D =800 V, T A 100 C Reverse Current I R(RMS) 10 100 m AV R =800 V, T A =100 C On-state Voltage V TM 1.7 3 V I T =300 mA On-state Current I TM 300 mA PF=1.0, V T(RMS) =1.7 V Surge (Non-repetitive On-state Current) I TSM

3 A f=50 Hz

H 65 500 m A Latching Current I L 5m A V T =2.2 V LED Trigger Current I FT 1 2 mA V AK =5 V Turn-on Time Turn-off Time t ON t OFF m s m s V RM DM =565 VAC, PF=1.0, I T =300 mA Critical Rate of Rise of Off-State Voltage dv/dt cr dv/dt cr 10000 5000 m m ss V D =0.67 V DRM , T j =25 C V D =0.67 V DRM , T j =80 C Critical Rate of Rise of Voltage at Current Commutation dv/dt crq dv/dt crq 10000 5000 m sV D =0.67 V DRM di/dt crq <15 A/ms T j =25 C T j =80 C Critical Rate of Rise of On-state Current di/dt/ cr 8A / m s Thermal Resistance, Junction to Lead R THJL 150 C/W Package Critical Rate of Rise of Coupled Input/Output Volt- age dv (IO) /dt 5000 V/ m sI T =0 A, V RM DM =565 VAC Common Mode Coupling Capacitor C CM 0.01 pF Package Capacitance C IO 0.8 pF f=1 MHz, V IO=0 V Trigger Current Temperature Gradient DIFT/DTj 71 4 mA/K