IL410

IL410 SIEMENS | Alldatasheet

Document overview

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Technical content

5–1

FEATURES

• On-State Current, 300 mA
• Zero Voltage Crossing
• Blocking Voltage, 600 V
• Isolation Test Voltage from Double Molded Package, 5300 VAC RMS
• High Input Sensitivity I FT =2 mA, PF=1.0 I FT =5 mA, PF 1.0
• High Static dv/dt 10,000 V/ m s
• Inverse Parallel SCRs Provide Commutating dv/dt 10K V/ m s
• Very Low Leakage m A
• Small 6-Pin DIP Package
• Underwriters Lab File #E52744
• VDE App roval #0884 (Optional with Option 1, Add -X001 Suffix) Maximum Ratings Emitter C/W Derate from 25 C Detector C/W Derate from 25 C Package RMS C to +150 C C to +100 C C/5 sec.

DESCRIPTION

The IL410 consists of a GaAs IRLED optically coupled to a photosensi- tive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insula- tion double molded, over/under leadframe construction. High input sensitivity is achieved by using an emitter follower pho- totransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2 mA (DC). The IL410 uses two discrete SCRs resulting in a commutating dV/dt greater than 10KV/ m s. The use of a proprietary dv/dt clamp results in a static dV/dt of greater than 10KV/ m s. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the pho- totransistor, disabling the first stage SCR predriver. The zero cross line voltage detection circuit consists of two enhance- ment MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The P- channel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the N-channel FET. Once the main voltage can enable the N-channel, it clamps the base of the phototrans- istor, disabling the first stage SCR predriver. The 600V blocking voltage permits control of off-line voltages up to 240VAC, with a safety factor of more than two, and is sufficient for as much as 380VAC. The IL410 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, sole- noids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equip- ment, and consumer appliances. Dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID 654 123 18° typ. .300 (7.62) .347 (8.82) typ. Triac MT2 Substrate do not connect Triac MT1 LED Anode LED Cathode NC *Zero Crossing Circuit ZCC* IL410 ZERO VOLTAGE CROSSING

600 V TRIAC DRIVER OPTOCOUPLER

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5–2 IL410 Characteristics Symbol Min Typ Max Unit Condition Emitter Forward Voltage V F 1.16 1.35 V I F =10 mA Reverse Current I R 0.1 10 m AV R =6 V Capacitance C O 25 pF V F =0 V, f=1 MHz Thermal Resistance, Junction to Lead R THJL 750 C/W Output Detector Off-State Voltage V D(RMS) 424 460 V I D(RMS) =70 mA Off-State Current I D(RMS)1 10 100 m AV D =600 V, T A =100 C, I F =0 mA Off State Current I D(RMS)2 200 m AV D =600 V, I F =Rated I FT On-State Voltage V TM 1.7 3 V I T =300 mA On State Current I TM 300 mA PF=1.0, V T(RMS) =1.7 V Surge (Non-Repititive), On-State Current I TSM

3 A f=50 Hz

2.0 mA V D =5 V Trigger Current 2 I FT2 6.0 mA V OP =220 V, f=50 Hz, T j =100 C, t pF >10 ms Trigger Current Temp. Gradient D I FT1 D T j D I FT2 D T j m A/K m A/K Inhibit Voltage Temp. Gradient D V DINH D T j -20 mV/K Off-State Current in Inhibit State I DINH 50 200 m AI F FT1 , V DRM Capacitance Between Input and Output Circuit C IO 2.0 pF V D =0, f=1 kHz Holding Current I H 65 500 m A Latching Current I L 5m A V T =2.2 V Zero Cross Inhibit Voltage V IH 15 25 V I F =Rated I FT Turn-On Time t ON m sV RM DM =424 VAC Turn-Off Time t OFF m s PF=1.0, I T =300 mA Critical Rate of Rise of Off-State Voltage dv/dt cr dv/dt cr 10000 5000 m s m s VD=0.67 V DRM , T j =25 C T j =80 C Critical Rate of Rise of Voltage at Current Commutation dv/dt crq dv/dt crq 10000 5000 m s m s V D =0.67 V DRM , di/dt crq

15 A/ms

T j =25 C T j =80 C Critical Rate of Rise of On-State Current di/dt cr

8 A/ms

Thermal Resistance, Junction to Lead R THJL 150 C/W Insulation and Isolation Critical Rate of Rise of Coupled Input/Output Voltage dv (IO) /dt 10000 V/ m sI T =0 A, V RM DM =424 VAC Common Mode Coupling Capacitor C CM 0.01 pF Packing Capacitance C IO 0.8 pF f=1 MHz, V IO =0 V Isolation Test Voltag, Input-Output V ISO 5300 VAC RMS Relative Humidity £ 50% Creepage ‡7m m Clearance ‡7m m Creepage Tracking Resistance per DIN IEC 112/VDE 0303, Part 1 Group IIIa per DIN VDE 10110 CTI 175 Isolation Resistance R is Ris ‡1012 ‡1011 W W VIO=500 V TA=25°C TA+100°C

5–6 IL410 Zero Voltage Switch The IL410 with zero voltage switch can only be triggered during the zero crossing the sine AC voltage. This prevents current spikes, e. g. when turning-on cold lamps or capacitive loads.

Applications

Direct switching operation: The IL410 switch is mainly suited to control synchronous motors, valves, relays and solenoids in Grätz circuits. Due to the low latching current (500 mA) and the lack of an RC circuit at the output, very low load currents can easily be switched. Indirect switching operation: The IL410 switch acts here as a driver and thus enables the driving of thyristors and triacs of higher performance by microprocessors. The driving current pulse should not exceed the maximum permissible surge cur- rent of the IL410. For this reason, the IL410 without zero voltage switch often requires current limiting by a series resistor. The favorably low latching current in this operating mode results in AC current switches which can handle load currents from some milliamperes up to high currents. Application Note

• Over voltage protection: A voltage-limiting varistor (e.g. SIO VS05K250) which directly connected to the IL410 can protect the component against overvoltage. Technical Information Commutating Behavior The use of a triac at the output creates difficulties in com- mutation due to both the built-in coupled thyristor systems. The triac can remain conducting by parasitic triggering after turning off the control current. However, if the IL410 is equipped with two separate thyristor chips featuring high dv/ dt strength, no RC circuit is needed in case of commutation. Control And Turn-On Behavior The trigger current of the IL410 has a positive temperature gradient. The time which expires from applying the control current to the turn-on of the load current is defined as the trig- ger delay time (tgd). On the whole this is a function of the overdrive meaning the ratio of the applied control current ver- sus the trigger current (I F/IFT). If the value of the control cur- rent corresponds to that of the individual trigger current of IL410 turn-on delay times amounts to a few milliseconds only. The shortest times of 5 to 10 ms can be achieved for an over- drive greater or equal than 10. The trigger delay time rises with an increase in temperature. For very short control current pulses (t plF <500 ms) a corre- spondingly higher control current must be used. Only the IL410 without zero voltage switch is suitable for this operating mode.