IL33290 IKSEMICON | Alldatasheet
Document overview
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- PDF pages: 8
Technical content
Features
- Designed to Operate Over Wide Supply Voltage of 8.0 to 18 V
- Ambient Operating Temperature of -40 to 125°C
- Interfaces Directly to Standard CMOS Microprocessors
- ISO K Line Pin Protected Against Shorts to Ground
- Thermal Shutdown with Hysteresis
- Maximum Transmission Speeds in Excess of 50 k Baud
- ISO K Line Pin Capable of High Currents
- ISO K Line Can Be Driven with up to 10 nF of Parasitic Capacitance
- 8.0 kV ESD Protection Attainable with Few Additional Components Standby Mode: No VBat Current Drain with V at 5.0 V
- DD
- Low Current Drain During Operation with VDD at 5.0 V
- NC pins should not have any connections m ade to them. NC pins are not guaranteed to be open circuits. Rev. 00
All voltages are with respect to ground unless otherwise noted. Notes 2. Device will survive double battery jump start conditions in typical applications for 10 minutes duration, but is not guaranteed to remain within specified parametric limits during this duration. 3. ESD data available upon request. 4. ESD1 testing is performed in accordance with the Human Body Model (C ZAP = 100 pF, RZAP = 1500 Ω). 5. ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω). 6. Nonrepetitive clamping capability at 25°C. 7. Lead soldering temperature limit is for 10 seconds maximum duration. Rev. 00
Rev. 00 tatic Electrical Characteristics der conditions of 4.75 V ≤ V ≤ 5.25 V, 8.0 V ≤ V ≤ 18 V, -40°C ≤ TC ≤ 125°C, S Characteristics noted un DD BB unless otherwise noted. Notes 8. When IBB transitions to >100 µA. 9. When IBB transitions to <100 µA. 10. Enable pin has an internal current pull-down equivalent to greater than 50 kΩ. 11. Measured by ramping TX down from 0.7 VDD and noting TX value at which ISO falls below 0.2 VBB. 12. Measured by ramping TX up from 0.3 VDD and noting the value at which ISO rises above 0.9 VBB. 13. Tx pin has internal current pull-up equivalent to greater than 50 kΩ. Pull-Up current measured with TX pin at 0.7 VDD. 14. Thermal Shutdown performance (TLIM) is guaranteed by design but not production tested.
Rev. 00 continued) Static Electrical Characteristics ( Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted. Notes 16. ISO ramped from 0.4 VBB to 0.8 VBB, Monitor RX, Value of ISO voltage at which RX transitions to 0.7 VDD 17. Input Hysteresis, VHys(ISO) = VIH(ISO) - VIL(ISO). 18. ISO has internal current limiting.
Dynamic Electrical Characteristics Rev. 00 Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted. Notes 19. Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB. 20. Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay.
Rev. 00
Application Information
Rev. 00 Package Dimensions D SU F F I X SOI C (MS - 012AA) Sym b ol M I N M AX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 F 0.40 1.27 G H J 0° 8° NOTES: K 0.10 0.25 1. Dimensions A and B do not include mold flash or protrusion. M 0.19 0.25 1.27 5.72 Dimension, mm A BH C K C M J F M P G D R x 45 SEA TING PLANE 0.25 (0.010) M T -T-