IL33153 INTEGRAL | Alldatasheet

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Technical content

The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this dev ice offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual- inline and surface mount packages and include the following features:

FEATURES

  • High Current Output Stage: 1.0 A Source/2.0 A Sink
  • Protection Circuits for Both Conventional and Sense IGBTs
  • Programmable Fault Blanking Time
  • Protection against Overcurrent and Short Circuit
  • Undervoltage Lockout Optimized for IGBT's
  • Negative Gate Drive Capability
  • Cost Effectively Drives Power MOSFETs and Bipolar Transistors BLOCK SCHEME

Kelvin Ground to VEE (Note 1 ) VCC-VEE KGnd - VEE V Logic Input Vin V EE-O,3 to VCC V Current Sense Input V S -0.3 to Vcc V Blanking/Desaturation Input VBD -0.3 to Vcc V Gate Drive Output Source Current Sink Current Diode Clamp Current I O 1.0 2.0 1.0 A Fault Output Source Current Sink Curent I FO mA Power Dissipation and Thermal Characteristics D Suffix SO-8 Package, Case 751 Maximum Power Dissipation @ TA = 5O°C Thermal Resistance, Junction-to-Air P Suffix DIP-8 Package, Case 626 Maximum Power Dissipation @ TA = 5O°C Thermal Resistance, Junction-to-Air P D RθJA P D RθJA 0.56 180 1.0 100 W °C/W W °C/W Operating Junction Temperature T J +150 °C Operating Ambient Temperature T A -40 to +105 °C Storage Temperature Range Tstg -65 to +150 °C

ELECTRICAL CHARACTERISTICS (Vcc=15V, VEE=0V, Kelvin Gnd connected to VEE. For typical values TA=25°C, for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.) Characteristic Symbol Min Typ Max Unit LOGIC INPUT Input Threshold Voltage ] High State (Logic 1 ) Low State (Logic 0) VIH VIL 1.2 2.70 2.30 3.2 V Input Current High State (VIH = 3.0 V) Low State (Vii. = 1.2 V) IIH IIL 130 500 100 µA DRIVE OUTPUT Output Voltage Low State (Isink = 1.0 A) High State (Isource = 500 mA) VOL VOH 2.0 13.9 2.5 V Output Pull-Down Resistor RPD - 100 200 kΩ FAULT OUTPUT Output voltage Low Slate (Isink = 5.0 mA) High State (Isource = 20 mA) VFL VFH 0.2 13.3 1.0 V SWITCHING CHARACTERISTICS Propagation Delay (50% Input to 50% Output CL = 1.0 nF) Logic Input to Drive Output Rise Logic Input to Drive Output Fall t PLH(in/out) tPHL (in/out) 120 300 300 ns Drive Output Rise Time (10% to 90%) CL = 1.0 nF tr - 17 55 ns Drive Output Fall Time (90% to 10%) CL= 1.0 nF tf - 17 55 ns Propagation Delay Current Sense Input to Drive Output Fault Blanking/Desaturation Input to Drive Output tp (OC) tp(FLT) 0.3 0.3 1.0 1.0 µs UVLO Startup Voltage VSS Start 11.3 12 12.6 V Disable Voltage VSS dis 10.4 11 11.7 V COMPARATORS Overcurrent Threshold Voltage (Vpin8 > 7,0 V) V SOC 50 65 80 mV Short Circuit Threshold Voltage (Vpine8> 7,0 V) V SSC 100 130 160 mV Fault Blanking/Desaturation Threshold (Vpin1 > 100 mV) V th(FLT) 6.0 6.5 7.0 V Current Sense Input Current (Vsi = 0 V) I SI - -1.4 -10 mA FAULT BLANKING/DESATURATION INPUT Current Source (Vpjn8 = 0 V, Vpin4 = 0 V) Ichg -200 -270 -300 mA Discharge Current (Vpin8 = 15 V, Vpin4 = 5.0 V) Idschg 1.0 2.5 - mA TOTAL DEVICE Power Supply Current Standby (Vpin 4 = VCC, Output Open) Operating (CL= 1.0 nF, f= 20 kHz) ICC 7.2 7.9 mA NOTES: 1. Kelvin Ground must always be between VEE and VCC. 2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. Tlow = -40°C lor IL33153 Thigh = +105°Clor IL33153