IL300 SIEMENS | Alldatasheet
Document overview
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Technical content
5–1
FEATURES
- Couples AC and DC signals
- 0.01% Servo Linearity
- Wide Bandwidth, >200 KHz
- High Gain Stability, 0.005%/C
- Low Input-Output Capacitance
- Low Power Consumption, < 15mw
- Isolation Test Voltage, 5300 VAC RMS 1 sec.
- Internal Insulation Distance, >0.4 mm for VDE
- Underwriters Lab File #E52744
- VDE App roval #0884 (Optional with Option 1, Add -X001 Suffix)
- IL300G Replaced by IL300-X006
APPLICATIONS
- Power Supply Feedback Voltage/ Current
- Medical Sensor Isolation
- Audio Signal Interfacing
- Isolate Process Control Transducers
- Digital Telephone Isolation
DESCRIPTION
The IL300 Linear Optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode in a bifurcated arrangement. The feed- back photodiode captures a percentage of the LED's flux and generates a control signal (IP ) that can be used to servo the LED drive current. This technique com- pensates for the LED's non-linear, time, and temperature characteristics. The out- put PIN photodiode produces an output signal (IP ) that is linearly related to the servo optical flux created by the LED. The time and temperature stability of the input-output coupler gain (K3) is insured by using matched PIN photodiodes that accurately track the output flux of the LED. A typical application circuit (Figure 1) uses an operational amplifier at the circuit input to drive the LED. The feedback photodiode sources current to R1 con- nected to the inverting input of U1. The photocurrent, IP1, will be of a magnitude to satisfy the relationship of (IP1=V IN /R1). (continued) The magnitude of this current is directly proportional to the feedback transfer gain (K1) times the LED drive current (V IN /R1=K1 • I F ). The op-amp will supply LED cur- rent to force sufficient photocurrent to keep the node voltage (Vb) equal to Va The output photodiode is connected to a non-inverting voltage follower amplifier. The photodiode load resistor, R2, performs the current to voltage conversion. The output amplifier voltage is the product of the output forward gain (K2) times the LED current and photodiode load, R2 (V O F
- K2 • R2). Therefore, the overall transfer gain (V O IN ) becomes the ratio of the product of the output forward gain (K2) times the photodiode load resistor (R2) to the product of the feedback transfer gain (K1) times the input resistor (R1). This reduces to V O IN (K2 • R2)/(K1 • R1). The overall transfer gain is completely independent of the LED forward current. The IL300 transfer gain (K3) is expressed as the ratio of the ouput gain (K2) to the feedback gain (K1). This shows that the circuit gain becomes the product of the IL300 transfer gain times the ratio of the output to input resistors [V O V IN =K3 (R2/R1)].
Figure 1. Typical application circuit
5–2 IL300 IL300 Terms KI—Servo Gain The ratio of the input photodiode current (I ) to the LED cur- rent(I F ). i.e., K1 = I / I F K2—Forward Gain The ratio of the output photodiode current ( I ) to the LED current (I F ), i.e., K2 = I / I F K3—Transfer Gain The Transfer Gain is the ratio of the Forward Gain to the Servo gain, i.e., K3 = K2/K1. D K3—Transfer Gain Linearity The percent deviation of the Transfer Gain, as a function of LED or temperature from a specific Transfer Gain at a fixed LED current and temperature. Photodiode A silicon diode operating as a current source. The output cur- rent is proportional to the incident optical flux supplied by the LED emitter. The diode is operated in the photovoltaic or pho- toconductive mode. In the photovoltaic mode the diode func- tions as a current source in parallel with a forward biased silicon diode. The magnitude of the output current and voltage is depen- dant upon the load resistor and the incident LED optical flux. When operated in the photoconductive mode the diode is connected to a bias supply which reverse biases the silicon diode. The magnitude of the output current is directly propor- tional to the LED incident optical flux. LED (Light Emitting Diode) An infrared emitter constructed of AlGaAs that emits at 890 nm operates efficiently with drive current from 500 m A to 40 mA. Best linearity can be obtained at drive currents between 5 mA to 20 mA. Its output flux typically changes by –0.5%/ C over the above operational current range. Absolute Maximum Ratings Symbol Min. Max. Unit Emitter Power Dissipation A =25 P LED 160 mW Derate Linearly from 25 C 2.13 mW/ C Forward Current lf 60 mA Surge Current (Pulse width <10 m lpk 250 mA Reverse Voltage V R Thermal Resistance Rth 470 C/W Junction Temperature T J 100 C Detector Power Dissipation P DET 50 mA Derate linearly from 25 C 0.65 mW/ C Reverse Voltage V R 50 V Junction Temperature T J 100 C Thermal Resistance Rth 1500 C/W Coupler Total Package Dissipation at 25 C P T 210 mW Derate linearly from 25 C 2.8 mW/ C Storage Temperature T S –55 150 C Operating Temperature T OP –55 100 C Isolation Test Voltage 5300 VAC RMS Isolation Resistance V IO =500 V, T A =25 C V IO =500 V, T A =100 C W W
5–3 IL300 Characteristics A =25 Symbol Min. Typ. Max. Unit Test Condition LED Emitter Forward Voltage V F 1.25 1.50 V I F =10 mA V F Temperature Coefficient D V F C -2.2 mV/ C Reverse Current I R 11 0 m AV R =5 V Junction Capacitance C J 15 pF V F =0 V, f=1 MHz Dynamic Resistance D V F D I F W I F =10 mA Switching Time t R t F m s m s D I F =2 mA, I Fq =10 mA D I F =2 mA, I Fq =10 mA Detector Dark Current I D 12 5 n A V det =-15 V, I F m A Open Circuit Voltage V D 500 mV I F =10 mA Short Circuit Current I SC m AI F =10 mA Junction Capacitance C J 12 pF V F =0 V, f=1 MHz Noise Equivalent Power NEP 4 x 10 Ö Hz V det =15 V Coupled Characteristics K1, Servo Gain (I F ) K1 0.0050 0.007 0.011 I F =10 mA, V det =-15 V Servo Current, see Note 1, 2 I P 17 0 m AI F =10 mA, V det =-15 V K2, Forward Gain (I F ) K2 0.0036 0.007 0.011 I F =10 mA, V det=-15 V Forward Current I P27 0 mAI F=10 mA, Vdet=-15 V K3, Transfer Gain (K2/K1) See Note 1, 2 K3 0.56 1.00 1.65 K2/K1 I F=10 mA, Vdet=-15 V Transfer Gain Linearity DK3 –0.25 % I F=1 to 10 mA Transfer Gain Linearity DK3 –0.5 % I F=1 to 10 mA, TA=0°C to 75°C Photoconductive Operation Frequency Response BW (-3 db) 200 KHz I Fq=10 mA, MOD=–4 mA, RL=50 W, Phase Response at 200 KHz -45 Deg. V det=-15 V Rise Time t R 1.75 ms Fall Time t F 1.75 ms Package Input-Output Capacitance C IO 1p F V F=0 V, f=1 MHz Common Mode Capacitance C cm 0.5 pF V F=0 V, f=1 MHz Common Mode Rejection Ratio CMRR 130 dB f=60 Hz, R L=2.2 KW Notes 1. Bin Sorting: K3 (transfer gain) is sorted into bins that are –5%, as follows: Bin A=0.557–0.626 Bin B=0.620–0.696 Bin C=0.690–0.773 Bin D=0.765–0.859 Bin E=0.851–0.955 Bin F=0.945–1.061 Bin G=1.051–1.181 Bin H=1.169–1.311 Bin I=1.297–1.456 Bin J=1.442–1.618 K3=K2/K1. K3 is tested at I F=10 mA, Vdet=–15 V. 2. Bin Categories: All IL300s are sorted into a K3 bin, indicated by an alpha character that is marked on the part. The bins range from “A” through “J”. The IL300 is shipped in tubes of 50 each. Each tube contains only one category of K3. The category of the parts in the tube is marked on the tube label as well as on each individual part. 3. Category Options: Standard IL300 orders will be shipped from the categories that are available at the time of the order. Any of the ten categories may be shipped. For customers requiring a narrower selection of bins, four different bin option parts are offered. IL300-DEFG: Order this part number to receive categories D,E,F,G only. IL300-EF: Order this part number to receive categories E, F only. IL300-E: Order this part number to receive category E only. IL300-F: Order this part number to receive category F only
transfer gain based upon the type of input and output amplifier. operational amplifiers that permit operation close to ground. Fq drive is targeted to operate beyond 15 mA. widths result when the amplifier gain is designed for unity. Figure 22. Non-inverting and inverting amplifiers Table 2. Optolinear amplifiers