IL215A SIEMENS | Alldatasheet
Document overview
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Technical content
5–1
- FEATURES
- High Current Transfer Ratio, I F =1 mA IL215A—20% Minimum IL216A—50% Minimum IL217A—100% Minimum
- Isolation Voltage, 2500 VAC RMS
- Electrical Specifications Similar to Standard 6 Pin Coupler
- Industry Standard SOIC-8 Surface Mountable Package
- Standard Lead Spacing, .05"
- Available in Tape and Reel Option (Conforms to EIA Standard RS481A)
- Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
- Underwriters Lab File #E52744 (Code Letter P)
DESCRIPTION
The IL215A/216A/217A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215A//216A/217A comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings Emitter Power Dissipation at 25 Derate Linearly from 25 C Detector Derate Linearly from 25 C Package Total Package Dissipation at 25 C Ambient Derate Linearly from 25 C C to +150 C C to +100 C Soldering Time at 260 Characteristics A =25 Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1.0 1.5 V I F =1 mA Reverse Current I R 0.1 100 m AV R =6.0 V Capacitance C O 25 pF V R Detector Breakdown Voltage Collector-Emitter Emitter-Collector B VCEO B VECO V V I C =10 m A I E =10 m A Dark Current, Collector-Emitter I CEOdark 55 0 n A V CE =10 V I F Capacitance, Collector-Emitter C CE 10 pF V CE Package DC Current Transfer Ratio IL215A IL216A IL217A CTR DC 100 130 F =10 mA, V CE =5 V Saturation Voltage, Collector-Emitter V CEsat 0.5 I F =1 mA, I C =0.1 mA Isolation Test Voltage V IO
2500 VAC
Capacitance, Input to Output C IO 0.5 pF Resistance, Input to Output R IO 100 G W Switching Time t on off 3.0 m sI C =2 mA, R E =100 W V CE =10 V Dimensions in inches (mm) 40° .240 (6.10) .154–.005 (3.91–.13) .050 (1.27) typ. .016 (.41) .192–.005 (4.88–.13) .004 (.10) .008 (.20) Lead Coplanarity –.0015 (.04) max. .015–.002 (.38–.05) .008 (.20) .058–.005 (1.49–.13) .125–.005 (3.18–.13) Pin One ID .120–.005 (3.05–.13) CL .021 (.53) 5° max. R.010 (.15–.10) 2 plcs. Anode Cathode NC NC NC Base Collector Emitter IL215A/216A/217A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER This document was created with FrameMaker 4.0.4
Figure 13. Low to high propagation delay versus Figure 14. Normalized non-saturated HFE versus Figure 15. Typical switching characteristics versus Figure 16. Typical switching timesversus load Figure 9. Normalized non-saturated and saturated Figure 10. Normalized collector-base photocurrent Figure 11. Collector-base photocurrent versus LED Figure 12. High to low propagation delay versus