IL215AT SIEMENS | Alldatasheet

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Technical content

Semiconductor Group 4–7 IL215AT/216AT/217AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches (mm)FEATURES

  • High Current Transfer Ratio, IF=1 mA IL215AT, 20% Minimum IL216AT, 50% Minimum IL217AT, 100% Minimum
  • Isolation Voltage, 2500 VACRMS
  • Electrical Specifications Similar to Standard 6 Pin Coupler
  • Industry Standard SOIC-8 Surface Mountable Package
  • Standard Lead Spacing, .05"
  • Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
  • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
  • Underwriters Lab File #E52744 (Code Letter P)

DESCRIPTION

The IL215AT/216AT/217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215AT/ 216AT/217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through- holes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings Emitter Detector Package Total Package Dissipation at 25 °C Ambient Characteristics(TA=25°C) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1.0 1.5 V I F=1 mA Reverse Current I R 0.1 100 mAV R=6.0 V Capacitance C O 25 pF V R=0 Detector Breakdown Voltage Collector-Emitter BV CEO 30 V I C=10 mA Emitter-Collector BV ECO 7V I E=10 mA Collector-Emitter V CE=10 V, Dark Current I CEOdark 55 0 n A I F =0 Collector-Emitter Capacitance C CE 10 pF V CE=0 Package DC Current Transfer CTR DC %I F=1 mA VCE=5 V IL215AT 20 50 IL216AT 50 80 IL217AT 100 130 Collector-Emitter I C=0.1 mA, Saturation Voltage V CE sat 0.4 I F=1 mA Isolation Test Voltage V IO 2500 VAC RMS Capacitance, Input to Output C IO 0.5 pF Resistance, Input to Output R IO 100 G W Switching Time t ON, tOFF 3.0 msI C=2 mA, RE=100 W, VCE=10 V Specifications subject to change. TOLERANCE: –.005 (unless otherwise noted) 40° .240 (6.10) .154–.005 (3.91–.13) .050 (1.27) typ. .016 (.41) .192–.005 (4.88–.13) .004 (.10) .008 (.20) Lead Coplanarity –.0015 (.04) max. .015–.002 (.38–.05) .008 (.20) .058–.005 (1.49–.13) .125–.005 (3.18–.13) Pin One ID .120–.005 (3.05–.13) CL .021 (.53) 5° max. R.010 (.15–.10) 2 plcs. Anode Cathode NC NC NC Base Collector Emitter 10.95

100 Vce = 5 V

Figure 9. Normalized non-saturated and saturated Figure 10. Normalized collector-base pho- Figure 11. Collector-base photocurrent versus

1000 Ta = 25°C

Figure 12. High to low propagation delay versus Figure 13. Low to high propagation delay Figure 14. Normalized non-saturated HFE Figure 15. Typical switching characteristics Figure 16. Typical switching times