IL211A SIEMENS | Alldatasheet
Document overview
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Technical content
5–1
FEATURES
- High Current Transfer Ratio IL211A—20% Minimum IL212A—50% Minimum IL213A—100% Minimum
- Isolation Voltage, 2500 VAC RMS
- Electrical Specifications Similar to Standard 6 Pin Coupler
- Industry Standard SOIC-8 Surface Mountable Package
- Standard Lead Spacing, .05"
- Available in Tape and Reel Option (Conforms to EIA Standard RS481A)
- Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
- Underwriters Lab File #E52744 (Code Letter P)
DESCRIPTION
The IL211A/212A/213A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211A//212A/213A comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100% minimum CTR at I F =10 mA makes these optocouplers suitable for a variety of different applications. Maximum Ratings Emitter Power Dissipation at 25 Derate Linearly from 25 C Detector Derate Linearly from 25 C2.0 mW/ C Package Total Package Dissipation at 25 C Ambient Derate Linearly from 25 C C to +150 C C to +100 C Soldering Time at 260 NEW Characteristics T A =25 Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1.3 1.5 V I F =10 mA Reverse Current I R 0.1 100 m AV R =6.0 V Capacitance C O 25 pF V R Detector Breakdown Voltage B VCEO B VECO V V I C =10 m A I E =10 m A Dark Current, Collector-Emitter I CEOdark 55 0 n A V CE =10 V I F Capacitance, Collector-Emitter C CE 10 pF V CE Package DC Current Transfer Ratio IL211A IL212A IL213A CTR DC 100 130 F =10 mA, V CE =5 V Saturation Voltage, Collector-Emitter V CEsat 0.4 I F =10 mA, I C =2.0 mA Isolation Test Voltage V IO
2500 VAC
Capacitance, Input toOutput C IO 0.5 pF Resistance, Input to Output R IO 100 G W Switching Time t on off 3.0 m sI C =2 mA, R E =100 W V CE =10 V Dimensions in inches (mm) 40° .240 (6.10) .154–.005 (3.91–.13) .050 (1.27) typ. .016 (.41) .192–.005 (4.88–.13) .004 (.10) .008 (.20) Lead Coplanarity –.0015 (.04) max. .015–.002 (.38–.05) .008 (.20) .058–.005 (1.49–.13) .125–.005 (3.18–.13) Pin One ID .120–.005 (3.05–.13) CL .021 (.53) 5° max. R.010 (.15–.10) 2 plcs. Anode Cathode NC NC NC Base Collector Emitter IL211A/212A/213A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Figure 1. Forward voltage versus forward current Figure 2. Normalized non-saturated and saturated Figure 3. Collector-emitter current versus LED current Figure 4. Normalized collector-base photocurrent Figure 5. Normalized collector-base photocurrent Figure 6. Collector-base photocurrent versus LED Figure 7. Collector-emitter leakage current versus Figure 8. Normalized saturated HFE versus base