IL211AT SIEMENS | Alldatasheet
Document overview
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Technical content
Semiconductor Group 4–4 IL211AT/IL212AT/IL213AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches (mm) TOLERANCE: –.005 (unless otherwise noted)
FEATURES
- High Current Transfer Ratio IL211AT—20% Minimum IL212AT—50% Minimum IL213AT—100% Minimum
- Isolation Voltage, 2500 VACRMS
- Electrical Specifications Similar to Standard 6 Pin Coupler
- Industry Standard SOIC-8 Surface Mountable Package
- Standard Lead Spacing, .05"
- Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
- Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
- Underwriters Lab File #E52744 (Code Letter P)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211AT//212AT/ 213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100% minimum CTR at I F=10 mA makes these optocouplers suitable for a variety of different applications. Maximum Ratings Emitter Detector Package Total Package Dissipation at 25 °C Ambient Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1.3 1.5 V I F=10 mA Reverse Current I R 0.1 100 mAV R=6.0 V Capacitance C O 25 pF V R=0 Detector Breakdown Voltage BV CEO 30 V I C=10 mA BVECO 7V I E=10 mA Collector-Emitter V CE=10 V, Dark Current I CEOdark 55 0 n AI F=0 Collector-Emitter Capacitance C CE 10 pF V CE=0 Package DC Current Transfer CTR DC %I F=10 mA VCE=5 V IL211AT 20 50 IL212AT 50 80 IL213AT 100 130 Collector-Emitter Saturation Voltage V CE sat 0.4 I F=10 mA, IC=2.0 mA Isolation Test Voltage V IO 2500 VAC RMS Capacitance, Input to Output C IO 0.5 pF Resistance, Input to Output R IO 100 G W Switching Time t ON, tOFF 3.0 msI C=2 mA, RE=100 W , VCE=10 V Specifications subject to change. 40° .240 (6.10) .154–.005 (3.91–.13) .050 (1.27) typ. .016 (.41) .192–.005 (4.88–.13) .004 (.10) .008 (.20) Lead Coplanarity –.0015 (.04) max. .015–.002 (.38–.05) .008 (.20) .058–.005 (1.49–.13) .125–.005 (3.18–.13) Pin One ID .120–.005 (3.05–.13) CL .021 (.53) 5° max. R.010 (.15–.10) 2 plcs. Anode Cathode NC NC NC Base Collector Emitter NEW 10.95