IL1 SIEMENS | Alldatasheet

Document overview

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Technical content

5–1

FEATURES

  • Current Transfer Ratio at I F =10 mA IL1, 20% Min. IL2, 100% Min. IL5, 50% Min.
  • High Collector-Emitter Voltage IL1 – BV CEO =50 V IL2, IL5 – BV CEO =70 V
  • Field-Effect Stable by TRansparent IOn Shield (TRIOS)
  • Double Molded Package Offers Isolation Test Voltage 5300 VAC RMS
  • Underwriters Lab File #E52744
  • VDE App roval #0884 (Available with Option 1)

DESCRIPTION

The IL1/2/5 are optically coupled isolated pairs employ- ing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be trans- mitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital inter- face applications such as CRT modulation. See Appnote 45, “How to Use Optocoupler Normalized Curves.” VDE Maximum Ratings Emitter Derate Linearly from 25 C Detector Collector-Emitter Reverse Voltage Derate Linearly from 25 C Package Derate Linearly from 25 C Isolation Test Voltage (between emitter and detector referred to standard climate 23 C/50%RH, DIN 50014)5300 VAC RMS Comparative Tracking Index per Isolation Resistance V IO =500 V, T A =25 C W V IO =500 V, T A =100 C W C to +150 C C to +100 C C C Dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID 654 123 18° typ. .300 (7.62) .347 (8.82) typ. Base Collector Emitter Anode Cathode NC IL1/2/5 PHOTOTRANSISTOR OPTOCOUPLER This document was created with FrameMaker 4.0.4

5–2 IL1/2/5 Characteristics Symbol Min Typ Max Unit Condition Emitter Forward Voltage V F 1.25 1.65 V I F =60 mA Breakdown Voltage V BR 63 0 VI R =10 m A Reverse Current I R 0.01 10 m AV R =6 V Capacitance C O 40 pF V R =0 V, f=1 MHz Thermal Resistance Junction to Lead R THJL 750 C/W Detector Capacitance C CE C CB C EB 6.8 8.5 pF pF pF V CE =5 V, f=1 MHz V CB =5 V, f=1 MHz V EB =5 V, f=1 MHz Collector-Emitter Leakage Current I CEO 55 0 n A V CE =10 V Collector-Emitter Saturation Voltage V CESAT 0.25 I CE =1 mA, I B =20 m A Base-Emitter Voltage V BE

0.65 V V

=10 V, I B =20 m A DC Forward Current Gain HFE 200 650 1800 V CE =10 V, I B =20 m A Saturated DC Forward Current Gain HFE SAT 120 400 600 V CE =0.4 V, I B =20 m A Thermal Resistance Junction to Lead R THJL 500 C/W Package Transfer Characteristics IL1 Saturated Current Transfer Ratio (Collector-Emitter) CTR CESAT 75 % I F =10 mA, V CE =0.4 V Current Transfer Ratio (Collector-Emitter) CTR CE 20 80 300 % I F =10 mA, V CE =10 V Current Transfer Ratio (Collector-Base) CTR CB 0.25 % I F =10 mA, V CB =9.3 V IL2 Saturated Current Transfer Ratio (Collector-Emitter) CTR CESAT 170 % I F =10 mA, V CE =0.4 V Current Transfer Ratio (Collector-Emitter) CTR CE 100 200 500 % I F =10 mA, V CE =10 V Current Transfer Ratio CTR CB 0.25 % I F =10 mA, V CB =9.3 V IL5 Saturated Current Transfer Ratio (Collector-Emitter) CTR CESAT 100 % I F =10 mA, V CE =0.4 V Current Transfer Ratio (Collector-Emitter) CTR CE 50 130 400 % I F =10 mA, V CE =10 V Current Transfer Ratio CTR CB 0.25 % I F =10 mA, V CB =9.3 V Isolation and Insulation Common Mode Rejection Output High CMH 5000 V/ m sV CM =50 V P-P , R L =1 k W , I F =0 mA Common Mode Rejection Output Low CML 5000 V/ m sV CM =50 V P-P , R L =1 k W , I F =10 mA Common Mode Coupling Capacitance C CM 0.01 pF Package Capacitance C I-O 0.6 pF V I-O =0 V, f=1 MHz Insulation Resistance R S +14 W V I-O =500 V