IRF150 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 IRF150/151/152/153 N-CHANNEL POWER MOSFETS

FEATURES

LOW RoS(on) Improved Inductive ruggedness Fast switching times • Rugged polyslllcon gate cell structure Low input capacitance Extended safe operating area Improved high temperature reliability TO-3 package (High current) PRODUCT SUMMARY Part Number IRF1 50 IHF151 IRF152 IHF153 Vos 100V 60V 100V 60V Rosion) 0.0550 0.055Q 0.080 0.08 0 ID 40A 40A 33A 33A TO-3 MAXIMUM RATINGS Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (Ros= 1 .OMO) (1 ) Gate-Source Voltage Continuous Drain Current Tc~25cC Continuous Drain Current TC-=100°C Drain Current— Pulsed (3) Gate Current— Pulsed Total Power Dissipation © Tc=25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum Lead Temp, (or Soldering Purposes. 1/8" from case for 5 seconds Symbol Voss VDQR VQS lo to (DM low Po Tj, Tstg TL IRF150 100 100 IRF1S1 IRF152 100 100 IRF163 ±20 160 160 132 132 ±1.5 160 1.2 -55 to 150 300 Unit Vdc Vdc Vdc Ado Adc Adc Adc Watts VWC Notes: (1) Tj-25''C to 150°C (2) Pulse test: Pulse width<300ps, Duty Cyc!e<2% (3) Repetitive rating: Pulse width limited by max. junction temperature NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS <T0=25°C unless otherwise specified) Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage • Gate-Source Leakage Forward Gate-Source Leakage Reverse Zero Gate Voltage Drain Current On-State Drain-Source Current (2) Static Drain-Source On-State Resistance (2) Forward Transconductance (2) nput Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge 'Gale-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge Symbol BVoss Vosw) loss loss IDSS Irjfon) Rosion) Sr» CB, COM Cnu tdfCW) tr td(oH) tf aa OB, God Type IRF150 IRF162 IRF1S1 IRF153 ALL ALL ALL ALL IRF160 IRF151 IRF152 IRF153 IRF150 IRF151 IRF1 62 IRF163 ALL ALL ALL ALL ALL ALL ALL ALL ALL ALL ALL Mln 100 2.0 9.0 Typ 0,04 0.06 12.3 2900 1050 450 Max 4.0 100 -100 250 1000 o.oss 0.06 3000 1500 500 100 126 100 120 Units V V V nA nA MA HA A A PF PF PF ns ns ns ns nC nC nC Test Conditions Voa-OV lo-250pA VDS-VGS. to=250(iA VQS-20V Vos=-20V Vos-Max. Rating, Vas-OV Vus-Max. RatingXO.B, Vos-OV, TC=125''C VoS>ltXon)X RDS(Mi) ma.. VQS= 1 0V Vos=10V, I0-20A Vos=OV, Vos=25V, f-t.OMHz VDD=O.SBV(>ss, lo-ZOA, Zo=4,70 (MOSFET switching times are essentially Independent of operating temperature. ) Ves-10V, ID-SOA, Vos-O.8 Max. Rating (Gate charge la essentially Independent of operating temperature. ) THERMAL RESISTANCE Junction-to-Case Case-to-SInk Junctlon-to- Ambient Rttvic R»cs RttlJA ALL ALL ALL 0.1 0.83 K/W «yw K/W Mounting surface flat, smooth, and greased Free Air Operation Notes: (1) Tj-26°C to 150°C (2) Pulse test: Pulse widthOOOpS, Duty Cycled2% . (3) Repetitive rating: Pulse width limited by max. junction temperature

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS ' Characteristic Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) (3) Diode Forward Voltage (2) Reverse Recovery Time Symbol Is ISM t,, Type IRF150 IRF151 IRF152 IRF163 IRF160 IRF151 IRF152 IRF163 IRF150 IRF161 IRF152 IRF153 ALL Mln Typ 600 Max 160 132 2.5 2.3 Units A A A A V V ns Test Condition* Modified MOSFET symbol showing the integral reverse P-N junction rectifier

  • 4$ Tc-25°C, ls=40A, Vos-OV Tc=25°C, IS-33A, Ves-OV Tj=150°C, lF=40A, dlF/dt=100A/|iS Notes: (1) Tj-25°C to 150°C (2) Pulse test: Pulse widthOOOps, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 10 20 30 40 SO Vos. CRAIN-TO-SOURCE VOLTAGE (VOLTE) Typical Output Characteristics 234667 Vos, OATE-7O-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics 0.4 08 12 16 20 Vos. DRAIH-TO-SOURCE VOLTABE (VOLTS) Typical Saturation Characterljllcs 1 10 t 'jpfl ISH Iff8! l
  • ; a. ., — >*-,Jpui ""7 !! — . . i . — ik V srr- — URATKM LKJTlOB l_U_Ll V^' JJ
  • 'j^H - ^ ' 10M - looms
  • 'DC' IWI60 2 1.0 2 5 10 20 50 100 200 600 1000 Vgj. DRAIN-TO-SOURCE VOLTAOE (VOLTS) Maximum Sat* Operating AIM