IGW50N65H5_15 INFINEON | Alldatasheet

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Highspeed5IGBTinTRENCHSTOPTM5technology IGW50N65H5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering

  • Best-in-Classefficiencyinhardswitchingandresonant topologies
  • PlugandplayreplacementofpreviousgenerationIGBTs
  • 650Vbreakdownvoltage
  • LowQG
  • Maximumjunctiontemperature175°C
  • QualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Uninterruptiblepowersupplies
  • Solarconverters
  • Weldingconverters
  • Midtohighrangeswitchingfrequencyconverters Packagepindefinition:
  • Pin1-gate
  • Pin2&backside-collector
  • Pin3-emitter G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IGW50N65H5 650V 50A 1.65V 175°C G50EH5 PG-TO247-3

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 TableofContents

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 56.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 150.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 305.0 152.5 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction - case Rth(j-c) 0.50 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.65 1.85 1.95 2.10 V Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C 40.0 2000.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 3000 - Output capacitance Coes - 50 - Reverse transfer capacitance Cres - 11 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=520V,IC=50.0A, VGE=15V - 120.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 21 - ns Rise time tr - 15 - ns Turn-off delay time td(off) - 180 - ns Fall time tf - 18 - ns Turn-on energy Eon - 0.52 - mJ Turn-off energy Eoff - 0.18 - mJ Total switching energy Ets - 0.70 - mJ Tvj=25°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 20 - ns Rise time tr - 4 - ns Turn-off delay time td(off) - 200 - ns Fall time tf - 25 - ns Turn-on energy Eon - 0.11 - mJ Turn-off energy Eoff - 0.05 - mJ Total switching energy Ets - 0.16 - mJ Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 20 - ns Rise time tr - 15 - ns Turn-off delay time td(off) - 205 - ns Fall time tf - 26 - ns Turn-on energy Eon - 0.75 - mJ Turn-off energy Eoff - 0.27 - mJ Total switching energy Ets - 1.02 - mJ Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 18 - ns Rise time tr - 5 - ns Turn-off delay time td(off) - 250 - ns Fall time tf - 35 - ns Turn-on energy Eon - 0.20 - mJ Turn-off energy Eoff - 0.08 - mJ Total switching energy Ets - 0.28 - mJ Tvj=150°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 RevisionHistory IGW50N65H5 Revision:2015-05-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet 1.2 2013-12-17 New Marking Pattern 2.1 2015-05-05 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered.