IGW08T120 INFINEON | Alldatasheet
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TrenchStop® Series q Power Semiconductors 1 Rev. 2.6 Nov. 09 Low Loss IGBT in TrenchStop® and Fieldstop technology
- Short circuit withstand time – 10 µs
- Designed for : - Frequency Converters - Uninterrupted Power Supply
- TrenchStop ® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
- NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Qualified according to JEDEC 1 for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Code Package IGW08T120 1200V 8A 1.7V 150°C G08T120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 24 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 24 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 70 W Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3
TrenchStop® Series q Power Semiconductors 2 Rev. 2.6 Nov. 09 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 1.7 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.5mA 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =8A Tj =25 °C Tj =125 °C Tj =150 °C 1.7 2.0 2.2 2.2 Gate-emitter threshold voltage VGE(th) IC =0.3mA, VCE =VGE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE =1200V , VGE =0V Tj =25 °C Tj =150 °C 0.2 2.0 mA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =8A - 5 - S Integrated gate resistor RGint none Ω Dynamic Characteristic Input capacitance Ciss - 600 - Output capacitance Coss - 36 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 28 - pF Gate charge QGate VCC =960V, IC =8A VGE =15V - 53 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤10 µs VCC = 600V, Tj = 25 °C - 48 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
TrenchStop® Series q Power Semiconductors 3 Rev. 2.6 Nov. 09 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 40 - Rise time tr - 23 - Turn-off delay time td(off) - 450 - Fall time tf - 70 - ns Turn-on energy Eon - 0.67 - Turn-off energy Eoff - 0.7 - Total switching energy Ets Tj =25 °C, VCC =600V, IC =8A, VGE =-15/15V, RG =81 Ω, Lσ 2) =180nH, Cσ 2) =39pF Energy losses include “tail” and diode reverse recovery. - 1.37 - mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 40 - Rise time tr - 26 - Turn-off delay time td(off) - 570 - Fall time tf - 140 - ns Turn-on energy Eon - 1.08 - Turn-off energy Eoff - 1.2 - Total switching energy Ets Tj =150 °C, VCC =600V, I C =8A, VGE =-15/15V, RG = 81 Ω, Lσ 2) =180nH, Cσ 2) =39pF Energy losses include “tail” and diode reverse recovery. - 2.28 - mJ 2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
TrenchStop® Series q Power Semiconductors 10 Rev. 2.6 Nov. 09
TrenchStop® Series q Power Semiconductors 11 Rev. 2.6 Nov. 09 Figure A. Definition of switching times Figure B. Definition of switching losses p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =39pF.
TrenchStop® Series q Power Semiconductors 12 Rev. 2.6 Nov. 09 Edition 2006-01 Published by Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/18/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.