IGU04N60T INFINEON | Alldatasheet
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TRENCHSTOP™ Series q Power Semiconductors 1 Rev. 2.0 24.02.2014 Low Loss IGBT : IGBT in TRENCHSTOP™ technology Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - frequency inverters - drives TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IGU04N60T 600 V 4 A 1.5 V 175 C G04T60 PG-TO251-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VC E 600 V DC collector current, limited by Tjmax TC = 25C TC = 100C IC 8 4 A Pulsed collector current, tp limited by Tjmax IC p ul s 12 Turn off safe operating area (VCE 600V, Tj 175C) - 12 Gate-emitter voltage VG E 20 V Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C tS C 5 s Power dissipation TC = 25C Pt o t 42 W Operating junction temperature Tj -40...+175 C Storage temperature Ts t g -55...+150 Soldering temperature, wave soldering, 1.6mm (0.063 in.) from case for 10s. Ts 260 C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO251-3 G C E
TRENCHSTOP™ Series q Power Semiconductors 2 Rev. 2.0 24.02.2014 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case Rt h J C 3.5 K/W Thermal resistance, junction – ambient Rt h J A 75 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unitmin. Typ. max. Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VG E=0V, IC =0.2mA 600 - - V Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC =4A Tj =25 C Tj =175 C 1.5 1.9 2.05 Gate-emitter threshold voltage VG E ( t h) IC = 60µA, VC E=VG E 4.1 4.9 5.7 Zero gate voltage collector current IC E S VC E=600V , VG E=0V Tj =25 C Tj =175 C µA Gate-emitter leakage current IG E S VC E=0V, VG E=20V - - 100 nA Transconductance gf s VC E=20V, IC =4A - 2.2 - S Dynamic Characteristic Input capacitance Ci s s VC E=25V, VG E=0V, f=1MHz - 252 - pF Output capacitance Co s s - 20 - Reverse transfer capacitance Cr s s - 7.5 - Gate charge QG a t e VC C=480V, IC =4A VG E=15V - 27 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7 - nH Short circuit collector current1) IC ( S C ) VG E=15V, tS C5s VC C = 400V, Tj 150C - 36 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
TRENCHSTOP™ Series q Power Semiconductors 3 Rev. 2.0 24.02.2014 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unitmin. Typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=25 C, VC C=400V, IC =4A, VG E=0/15V, rG =47 , L=150nH, C=47pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. - 14 - ns Rise time tr - 7 - Turn-off delay time td ( o f f ) - 164 - Fall time tf - 43 - Turn-on energy Eo n - 61 - µJ Turn-off energy Eo f f - 84 - Total switching energy Et s - 145 - Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unitmin. Typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=175 C, VC C=400V, IC =4A, VG E=0/15V, rG =47 , L=150nH, C=47pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. - 14 - ns Rise time tr - 10 - Turn-off delay time td ( o f f ) - 185 - Fall time tf - 83 - Turn-on energy Eo n - 99 - µJ Turn-off energy Eo f f - 97 - Total switching energy Et s - 196 -
Figure 21. IGBT transient thermal
TRENCHSTOP™ Series q Power Semiconductors 10 Rev. 2.0 24.02.2014 PG-TO251-3
TRENCHSTOP™ Series q Power Semiconductors 11 Rev. 2.0 24.02.2014 I r r m 90% I r r m 10% Ir r m di /dt F t r r I F i,v tQ S Q F t S t F V R di /dt r r Q =Q Q r r S F t =t t r r S F Figure C. Definition of diodes switching characteristics p(t) 1 2 n T (t)j n n TC r r r r r r Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses
TRENCHSTOP™ Series q Power Semiconductors 12 Rev. 2.0 24.02.2014 Published by Infineon Technologies AG
81726 Munich, Germany
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