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Document overview
- Manufacturer or author: Infineon technologies
- PDF pages: 16
Technical content
Features
Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified according to JEDEC Standards (JESD47 and JESD22) Benefits Improves efficiency due to best Figure Of Merit (FOM) in 400V class Exhibits very low noise level Lower THD compared to best-in-class Silicon switch Compatible with existing control ICs
Applications
Class-D Audio Amplifier Table 1 Key Performance Parameters at Tj = 25 °C Table 2 Ordering Information Parameter Value Unit VDS,max 400 V RDS(on),max 70 mΩ QG,typ 4.5 nC ID,pulse 60 A Qoss @ 320 V 35 nC Qrr 0 nC Type / Ordering Code Package Marking Related links IGT40R070D1 PG-HSOF-8-3 40R070D1 See Appendix A SK Gate 8 Drain drain contact Kelvin Source 7 Source 1,2,3,4,5,6 SK G G
Final Data Sheet 2 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor Table of Contents
Final Data Sheet 3 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
1 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings 1 All devices are 100% tested at I DS = 12.2 mA to assure VDS ≥ 800 V
2 Limits derived from product characterization, parameter not measured during production
3 Ensure that average gate drive current, I G,avg is ≤ 20 mA. Please see figure 27 for IG,avg, IG,pulse and IG details 4 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application 5 We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for details Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Drain Source Voltage 1 VDS,max - - 400 V VGS = 0 V Continuous current, drain source ID A T C = 25 °C; Tj = Tj, max TC = 100 °C; Tj = Tj, max TC = 125 °C; Tj = Tj, max Pulsed current, drain source 2 3 ID,pulse - - 60 A T C = 25 °C; IG = 26.1 mA; See Figure 3; Pulsed current, drain source 3 4 ID,pulse - - 35 A T C = 125 °C; IG = 26.1 mA; See Figure 4; Gate current, continuous 3 4 5 IG - - 20 mA T j = -55 °C to 150 °C; Gate current, pulsed 3 5 IG,pulse - - 2000 mA T j = -55 °C to 150 °C; tPULSE = 50 ns, f=100 kHz Gate source voltage, continuous 5 VGS -10 - - V T j = -55 °C to 150 °C; Gate source voltage, pulsed 5 VGS,pulse -25 - - V T j = -55 °C to 150 °C; tPULSE = 50 ns, f = 100 kHz; open drain Power dissipation Ptot - - 125 W TC = 25 °C Operating temperature Tj -55 - 150 °C Storage temperature Tstg -55 - 150 °C Max shelf life depends on storage conditions. Drain-source voltage slew-rate dV/dt 200 V/ns
Final Data Sheet 4 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
2 Thermal characteristics
Table 4 Thermal characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case RthJC - - 1 °C/W Thermal resistance, junction-ambient RthJA - - 62 °C/W Device on PCB, minimum footprint Thermal resistance, junction-ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm* 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Reflow soldering temperature Tsold - - 260 °C MSL1
Final Data Sheet 5 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
3 Electrical characteristics
at Tj = 25 °C, unless specified otherwise Table 5 Static characteristics Table 6 Dynamic characteristics
1 Parameter represents end of use leakage in applications
2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 320 V 3 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 320 V Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate threshold voltage VGS(th) 0.9 0.7 1.2 1.0 1.6 1.4 V I DS = 2.6 mA; VDS = 10 V; Tj =25 °C IDS = 2.6 mA; VDS = 10 V; Tj =125 °C Gate-Source reverse clamping voltage VGS, clamp - - -8 V I GSS = -1 mA Drain-Source leakage current IDSS 100 µA VDS = 400 V; VGS = 0 V; Tj = 25 °C VDS = 400 V; VGS = 0 V; Tj = 150 °C Drain-Source leakage current at application conditions1 IDSSapp - 60 - μA VDS = 320 V; VGS = 0 V; Tj = 125 °C Drain-Source on-state resistance RDS(on) 0.055 0.100 0.070 Ω IG = 26.1 mA; ID = 8 A; Tj = 25 °C IG = 26.1 mA; ID = 8 A; Tj = 150 °C Gate resistance RG,int - 0.78 - Ω LCR impedance measurement; f = fres ; open drain; Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Input capacitance Ciss - 382 - pF VGS = 0 V; VDS = 320 V; f = 1 MHz Output capacitance Coss - 72 - pF VGS = 0 V; VDS = 320 V; f = 1 MHz Reverse Transfer capacitance C rss - 0.3 - pF VGS = 0 V; VDS = 320 V; f = 1 MHz Effective output capacitance, energy related 2 Co(er) - 84 - pF V DS = 0 to 320 V Effective output capacitance, time related 3 Co(tr) - 109.4 - pF VGS = 0 V; VDS = 0 to 320 V; Id = const Output charge Qoss - 35 - nC V DS = 0 to 320 V Turn- on delay time td(on) - 10 - ns see Figure 23 Turn- off delay time td(off) - 14 - ns see Figure 23 Rise time tr - 8 - ns see Figure 23 Fall time tf - 15 - ns see Figure 23
Final Data Sheet 6 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor Table 7 Gate charge characteristics Table 8 Reverse conduction characteristics
1 Excluding Qoss
Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate charge QG - 4.5 - nC IGS = 0 to 10 mA; VDS= 320 V; ID= 8 A Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Source-Drain reverse voltage VSD - 2.2 2.5 V V GS = 0 V; ISD = 8 A Pulsed current, reverse IS,pulse - - 60 A I G = 26.1 mA Reverse recovery charge Qrr 1 - 0 - nC IS = 8 A, VDS = 320 V Reverse recovery time trr - 0 - ns Peak reverse recovery current I rrm - 0 - A
Final Data Sheet 7 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
4 Electrical characteristics diagrams
at Tj = 25 °C, unless specified otherwise Figure 1 Power dissipation Figure 2 Max. transient thermal impedance Ptot=f(Tc) ZthJC=f(tp, D) Figure 3 Safe operating area Figure 4 Safe operating area ID=f(VDS); TC = 25 °C ID=f(VDS); TC = 125 °C 100 120 140 0 20 40 60 80 100 120 140 160 PTOTAL (W) TCASE (°C) 0.001 0.01 0.1 ZthJC (°C/W) Rectangular Pulse Duration (ms) single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.01 0.1 100 1 10 100 1000 ID (A) VDS (V) tp = 10 μs DC tp = 100 μstp = 1 ms tp = 20 ns Limited by RDS(on) 0.01 0.1 100 1 10 100 1000 ID (A) VDS (V) tp = 10 μs DC tp = 100 μs tp = 1 ms tp = 20 ns Limited by RDS(on)
Final Data Sheet 12 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor Figure 21 Typ. output charge Figure 22 Typ. Coss stored Energy QOSS = f(VDS) EOSS = f(VDS) 0 100 200 300 400 QOSS (nC) VDS (V) 0 100 200 300 400 EOSS (µJ) VDS (V)
Final Data Sheet 13 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
5 Test Circuits
Figure 23 Switching times with inductive load Figure 24 Switching times waveform ID = 8A, RON = 5 Ω; ROFF = 5 Ω; RSS = 300 Ω; CG = 3.3 nF; VDRV = 12V Figure 25 Reverse Channel Characteristics Test Figure 26 Typical Reverse Channel Recovery ID = 8A, RON = 5 Ω; ROFF = 5 Ω; RSS = 300 Ω; CG = 3.3 nF; VDRV = 12V The recovery charge is QOSS only, no additional Qrr Figure 27 Gate current switching waveform G SK S D RSS RON ROFF CG G SK S D RSS RON ROFF CG L 400V VDS ID G SK S D RSS RON ROFF CG G SK S D RSS RON ROFF CG L 400V VDS ID IG, avg t IG,pulse IG t
Final Data Sheet 14 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
6 Package Outlines
Figure 28 PG-HSOF-8-3 Package Outline, dimensions (mm)
Final Data Sheet 15 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
7 Appendix A
IFX CoolGaNTM webpage: www.infineon.com/why-coolgan IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan IFX CoolGaNTM applications information: o www.infineon.com/gan-in-server-telecom o www.infineon.com/gan-in-wirelesscharging o www.infineon.com/gan-in-audio o www.infineon.com/gan-in-adapter-charger
Final Data Sheet 16 Rev. 2.1 2021-10-26 IGT40R070D1 400V CoolGaN™ enhancement-mode Power Transistor
8 Revision History
Major changes since the last revision 2.0 2021-03-10 Final version release 2.1 2021-10-26 Replaced I GSS specification with VGS, clamp in table 5 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG
81726 München, Germany
© 2021 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision Date Description of change