IGQ100N120S7 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Infineon Technologies AG
- PDF pages: 14
Technical content
Features
- V CE = 1200 V
- I C = 100 A
- Low saturation voltage V CEsat = 2.0 V at Tvj = 175°C
- Short circuit ruggedness 8 µs
- Wide range of dv/dt controllability
- Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications
- Industrial power supplies
- Solar Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TO-247PLUS – 3Pin 42021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.
Description
G C E Type Package Marking IGQ100N120S7 PG-TO247-3-PLUS-NN3.7 G100MS7 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 www.infineon.com 2023-01-23
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Table of contents Datasheet 2 Revision 1.10 2023-01-23
1 Package
Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Internal emitter inductance measured 5 mm (0.197 in.) from case LE 13 nH Storage temperature Tstg -55 150 °C Soldering temperature Tsold wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C Thermal resistance, junction-ambient Rth(j-a) 40 K/W IGBT thermal resistance, junction-case Rth(j-c) 0.13 0.18 K/W
2 IGBT
Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCE Tvj ≥ 25 °C 1200 V DC collector current, limited by Tvjmax IC limited by bondwire Tc = 25 °C 188 A Tc = 100 °C 126 Pulsed collector current, tp limited by Tvjmax ICpulse 300 A Turn-off safe operating area VCE ≤ 1200 V, Tvj ≤ 175 °C 300 A Gate-emitter voltage VGE ±20 V Transient gate-emitter voltage VGE tp ≤ 0.5 µs, D < 0.001 ±25 V Short-circuit withstand time tSC VCC ≤ 600 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C 8 µs Power dissipation Ptot Tvj ≤ 175 °C Tc = 25 °C 824 W Tc = 100 °C 412 Table 3 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCEsat IC = 100 A, VGE = 15 V Tvj = 25 °C 1.65 2 V Tvj = 175 °C 2 (table continues...) IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 3 Revision 1.10 2023-01-23
Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Gate-emitter threshold voltage VGEth IC = 2 mA, VCE = VGE 5.1 5.7 6.5 V Zero gate-voltage collector current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 20 µA Tvj = 175 °C 8700 Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V 100 nA Transconductance gfs IC = 100 A, VCE = 20 V, Tvj = 175 °C 36 S Short-circuit collector current ISC VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C 600 A Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 14.5 nF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 270 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 60 pF Gate charge QG IC = 100 A, VGE = 15 V, VCC = 960 V 610 nC Turn-on delay time td(on) VCC = 600 V, VGE = 0/15 V, RG(on) = 1.6 Ω, RG(off) = 1.6 Ω Tvj = 25 °C, IC = 100 A 38 ns Tvj = 175 °C, IC = 100 A Rise time (inductive load) tr VCC = 600 V, VGE = 0/15 V, RG(on) = 1.6 Ω, RG(off) = 1.6 Ω Tvj = 25 °C, IC = 100 A 26 ns Tvj = 175 °C, IC = 100 A Turn-off delay time td(off) VCC = 600 V, VGE = 0/15 V, RG(on) = 1.6 Ω, RG(off) = 1.6 Ω Tvj = 25 °C, IC = 100 A 200 ns Tvj = 175 °C, IC = 100 A 270 Fall time (inductive load) tf VCC = 600 V, VGE = 0/15 V, RG(on) = 1.6 Ω, RG(off) = 1.6 Ω Tvj = 25 °C, IC = 100 A 103 ns Tvj = 175 °C, IC = 100 A 230 Turn-on energy Eon VCC = 600 V, VGE = 0/15 V, RG(on) = 1.6 Ω, RG(off) = 1.6 Ω Tvj = 25 °C, IC = 100 A 6.87 mJ Tvj = 175 °C, IC = 100 A 10.1 (table continues...) IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 4 Revision 1.10 2023-01-23
Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-off energy Eoff VCC = 600 V, VGE = 0/15 V, RG(on) = 1.6 Ω, RG(off) = 1.6 Ω Tvj = 25 °C, IC = 100 A 4.71 mJ Tvj = 175 °C, IC = 100 A 8.84 Total switching energy Ets VCC = 600 V, VGE = 0/15 V, RG(on) = 1.6 Ω, RG(off) = 1.6 Ω Tvj = 25 °C, IC = 100 A 11.6 mJ Tvj = 175 °C, IC = 100 A 18.9 Operating junction temperature Tvj -40 175 °C Note: Electrical Characteristic, at T vj = 25°C, unless otherwise specified. For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Dynamic test circuit, parasitic inductance Lσ = 30 nH, Cσ = 18 pF. Energy losses include “tail” and diode (IKQ100N120CS7) reverse recovery IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 5 Revision 1.10 2023-01-23
3 Characteristics diagrams
Reverse bias safe operating area IC = f(VCE) Tvj ≤ 175 °C, VCE ≤ 1200 V Typical output characteristic IC = f(VCE) Tvj = 25 °C 1 10 100 1000 0.1 100 1000 0 1 2 3 4 5 100 150 200 250 300 Typical output characteristic IC = f(VCE) Tvj = 175 °C Typical transfer characteristic IC = f(VGE) VCE = 20 V 0 1 2 3 4 5 100 150 200 250 300 4 6 8 10 12 14 16 100 150 200 250 300 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 6 Revision 1.10 2023-01-23
Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 2 mA 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 Typical switching times as a function of collector current t = f(IC) VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 1.6 Ω Typical switching times as a function of gate resistor t = f(RG) IC = 100 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V 0 40 80 120 160 200 100 1000 10000 1 3 5 7 9 11 13 100 1000 10000 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 7 Revision 1.10 2023-01-23
Typical switching times as a function of junction temperature t = f(Tvj) IC = 100 A, VCC = 600 V, VGE = 0/15 V, RG = 1.6 Ω Typical switching energy losses as a function of collector current E = f(IC) VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 1.6 Ω 25 50 75 100 125 150 175 100 1000 0 25 50 75 100 125 150 175 200 Typical switching energy losses as a function of gate resistor E = f(RG) IC = 100 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V Typical switching energy losses as a function of junction temperature E = f(Tvj) IC = 100 A, VCC = 600 V, VGE = 0/15 V, RG = 1.6 Ω 1 3 5 7 9 11 13 25 50 75 100 125 150 175 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 8 Revision 1.10 2023-01-23
Typical switching energy losses as a function of collector emitter voltage E = f(VCE) IC = 100 A, Tvj = 175 °C, VGE = 0/15 V, RG = 1.6 Ω Typical gate charge VGE = f(QG) IC = 100 A 400 450 500 550 600 650 700 750 800 0 80 160 240 320 400 480 560 640 Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 100 kHz, VGE = 0 V Typical short circuit collector current as a function of gate-emitter voltage IC(SC) = f(VGE) Tvj = 150 °C, VCC ≤ 600 V 0 5 10 15 20 25 30 100 1000 10000 12 13 14 15 16 17 200 300 400 500 600 700 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 9 Revision 1.10 2023-01-23
Short circuit withstand time as a function of gate- emitter voltage tSC = f(VGE) Tvj ≤ 150 °C, VCC ≤ 600 V IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 12 13 14 15 16 17 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 10 Revision 1.10 2023-01-23
4 Package outlines
DIMENSIONS MIN. MAX. MILLIMETERS PG-TO247-3-U01 PACKAGE - GROUP NUMBER: b D c E e L A 2.101.90 5.44 (BSC) 20.90 0.59 1.16 15.70 3.90 19.80 16.25 1.26 0.66 21.10 4.30 20.10 15.90 16.85 4.90 2.31 5.10 2.51 b2 1.96 2.06 D2 1.05 1.35 E1 13.10 13.50 N 3 b1 2.25 E2 1.35 1.55 b3 3.25 b4 2.96 3.06 D3 0.58 0.78 R 1.90 2.10 --- --- PG-TO247-3-PLUS-NN3.7 Figure 1 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 11 Revision 1.10 2023-01-23
5 Testing conditions
t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCC t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions Figure 2 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 12 Revision 1.10 2023-01-23
Revision history
Document revision Date of release Description of changes 0.10 2022-05-04 Target datasheet 1.00 2022-12-05 Final datasheet 1.10 2023-01-23 Correction of boundary condition of diagrams IC(SC) = f(VGE) and tSC = f(VGE) Change of product outline drawing on page 11 IGQ100N120S7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Datasheet 13 Revision 1.10 2023-01-23
All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-01-23 Published by Infineon Technologies AG
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© 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABD285-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.