IGP06N60T INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.1 June 06 Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Features:

  • Very low VCE(sat) 1.5 V (typ.)
  • Maximum Junction Temperature 175 °C
  • Short circuit withstand time – 5 µs
  • TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
  • Low EMI
  • Qualified according to JEDEC 1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:
  • Variable Speed Drive for washing machines and air conditioners
  • Buck converters Type VCE I C;Tc=100°C VCE(sat),Tj=25°C Tj,max Marking Package IGP06N60T 600V 6A 1.5V 175°C G06T60 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 18 Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C - 18 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25°C Ptot 88 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 260

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-220-3-1 G C E

Power Semiconductors 2 Rev. 2.1 June 06 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 1.7 Thermal resistance, junction – ambient RthJA 62 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.25mA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =6A Tj =25 °C Tj =175 °C 1.5 1.8 2.05 Gate-emitter threshold voltage VGE(th) IC =0.18mA, VCE =VGE 4.1 4.6 5.7 V Zero gate voltage collector current ICES VCE =600V , VGE =0V Tj =25 °C Tj =175 °C 700 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =6A - 3.6 - S Integrated gate resistor RGint none Ω Dynamic Characteristic Input capacitance Ciss - 368 - Output capacitance Coss - 28 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 11 - pF Gate charge QGate VCC =480V, IC =6A VGE =15V - 42 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 5µ s VCC = 400V, Tj = 25 °C - 55 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 3 Rev. 2.1 June 06 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9 - Rise time tr - 6 - Turn-off delay time td(off) - 130 - Fall time tf - 58 - ns Turn-on energy Eon - 0.09 - Turn-off energy Eoff - 0.11 - Total switching energy Ets Tj =25 °C, VCC =400V, IC =6A, VGE =0/15V, RG =23 Ω , Lσ 1) =60nH, Cσ 2) =40pF Energy losses include “tail” and diode reverse recovery. - 0.2 - mJ Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9 - Rise time tr - 8 - Turn-off delay time td(off) - 165 - Fall time tf - 84 - ns Turn-on energy Eon - 0.14 - Turn-off energy Eoff - 0.18 - Total switching energy Ets Tj =175 °C, VCC =400V, IC =6A, VGE =0/15V, RG = 23 Ω Lσ 2) =60nH, Cσ 2) =40pF Energy losses include “tail” and diode reverse recovery 3). - 0.335 - mJ 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. 2) Diode used IDP06E60

Figure 21. IGBT transient thermal resistance

Power Semiconductors 10 Rev. 2.1 June 06 Dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB PG-TO220-3-1

Power Semiconductors 11 Rev. 2.1 June 06 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF.

Power Semiconductors 12 Rev. 2.1 June 06 Edition 2006-01 Published by Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 6/14/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.