IGP03N120H2_08 INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.6 Febr. 08 HighSpeed 2-Technology

  • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies
  • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - E off optimized for IC =3A
  • Qualified according to JEDEC 2 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C Eoff Tj Marking Package IGW03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-247-3 IGP03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz IC 9.6 3.9 Pulsed collector current, tp limited by Tjmax ICpuls 9.9 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 9.9 A Gate-emitter voltage VGE ±20 V Power dissipation TC = 25°C Ptot 62.5 W Operating junction and storage temperature Tj , Tstg -40...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

2 J-STD-020 and JESD-022

G C E PG-TO-247-3 PG-TO220-3-1

Power Semiconductors 2 Rev. 2.6 Febr. 08 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 2.0 Thermal resistance, junction – ambient RthJA PG-TO-220-3-1 PG-TO-247-3 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =300 μA 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =3A Tj =25 °C Tj =150 °C VGE = 10V, IC =3A, Tj =25 °C 2.2 2.5 2.4 2.8 Gate-emitter threshold voltage VGE(th) IC =90 μA, VCE =VGE 2.1 3 3.9 V Zero gate voltage collector current ICES VCE =1200V, VGE =0V Tj =25 °C Tj =150 °C μA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =3A - 2 - S Dynamic Characteristic Input capacitance Ciss - 205 - Output capacitance Coss - 24 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 7 - pF Gate charge QGate VCC =960V, IC =3A VGE =15V - 22 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE PG-TO-220-3-1 PG-TO-247-3 nH

Power Semiconductors 3 Rev. 2.6 Febr. 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.2 - Rise time tr - 5.2 - Turn-off delay time td(off) - 281 - Fall time tf - 29 - ns Turn-on energy Eon - 0.14 - Turn-off energy Eoff - 0.15 - Total switching energy Ets Tj =25 °C, VCC =800V, IC =3A, VGE =15V/0V, RG =82 Ω, Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 3) reverse recovery. - 0.29 - mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.4 - Rise time tr - 6.7 - Turn-off delay time td(off) - 340 - Fall time tf - 63 - ns Turn-on energy Eon - 0.22 - Turn-off energy Eoff - 0.26 - Total switching energy Ets Tj =150 °C VCC =800V, IC =3A, VGE =15V/0V, RG =82 Ω, Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 3) reverse recovery. - 0.48 - mJ Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-off energy Eoff VCC =800V, IC =3A, VGE =15V/0V, RG =82 Ω, Cr 2) =4nF Tj =25 °C Tj =150 °C 0.05 0.09 mJ 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 3) Commutation diode from device IKP03N120H2

Figure 21. Typical turn off behavior, soft

Power Semiconductors 10 Rev. 2.6 Febr. 08 PG-TO247-3

Power Semiconductors 11 Rev. 2.6 Febr. 08 PG-TO220-3-1

Power Semiconductors 12 Rev. 2.6 Febr. 08 Figure A. Definition of switching times I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ = 180nH, Stray capacitor Cσ = 40pF, Relief capacitor Cr = 4nF (only for ZVT switching) Figure B. Definition of switching losses öö VDC DUT (Diode) ½ Lσ RG DUT (IGBT) L ½ Lσ Cσ Cr

Power Semiconductors 13 Rev. 2.6 Febr. 08 Edition 2006-01 Published by Infineon Technologies AG

81726 München, Germany

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