IGO60R042D1

IGO60R042D1 INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Baum Bjoern (IFAT PMM STL)
• PDF pages: 16

Technical content

Features

• Enhancement mode transistor – Normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI

Applications

Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaN™ reliability white paper and contact Infineon regional support Table 1 Key Performance Parameters at Tj = 25 °C Table 2 Ordering Information Parameter Value Unit VDS,max 600 V RDS(on),max 42 mΩ QG,typ 8.8 nC ID,pulse 90 A Qoss @ 400 V 62 nC Qrr 0 nC Type / Ordering Code Package Marking Related links IGO60R042D1 PG-DSO-20-85 60R042D1 see Appendix A Gate 9, 10 Drain 13,14,15,16,17,18 Kelvin Source 8 Source 1,2,3,4,5,6,7, heatslug not connected 11,12,19,20 G SK S D

Final Data Sheet 2 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor Table of Contents

Final Data Sheet 3 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

1 Maximum ratings

at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings 1 All devices are 100% tested at IDS = 19.6 mA to assure VDS ≥ 800 V 2 Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation

3 Limits derived from product characterization, parameter not measured during production

4 Ensure that average gate drive current, IG,avg is ≤ 64 mA. Please see figure 27 for IG,avg, IG,pulse and IG details 5 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application 6 We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for details Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Drain source voltage, continuous 1 VDS,max - - 600 V VGS = 0 V Drain source destructive breakdown voltage 2 VDS,bd 800 - - V VGS = 0 V, IDS = 19.6 mA Drain source voltage, pulsed 2 VDS,pulse - 750 650 V V Tj = 25 °C; VGS ≤ 0 V; ≤1 hour of total time Tj = 125 °C, VGS ≤ 0 V; ≤1 hour of total time Switching surge voltage, pulsed 2 VDS,surge - - 750 V DC bus voltage = 700 V; turn off VDS,pulse = 750 V; turn on ID,pulse = 43 A; Tj = 105 °C; f ≤ 100 kHz, t ≤ 100 secs (10 million pulses) Continuous current, drain source ID - - 19 A TC = 125 °C; Tj = Tj, max Pulsed current, drain source 3 4 ID,pulse - - 90 A TC = 25 °C; IG = 83.8 mA; See Figure 3; Pulsed current, drain source 4 5 ID,pulse - - 45 A TC = 125 °C; IG = 83.8 mA; See Figure 4; Gate current, continuous 4 5 6 IG,avg - - 64 mA Tj = -55 °C to 150 °C; Gate current, pulsed 4 6 IG,pulse - - 3200 mA Tj = -55 °C to 150 °C; tPULSE = 50 ns, f=100 kHz Gate source voltage, continuous 6 VGS -10 - - V Tj = -55 °C to 150 °C; Gate source voltage, pulsed 6 VGS,pulse -25 - - V Tj = -55 °C to 150 °C; tPULSE = 50 ns, f = 100 kHz; open drain Power dissipation Ptot - - 250 W TC = 25 °C Operating temperature Tj -55 - 150 °C Storage temperature Tstg -55 - 150 °C Max shelf life depends on storage conditions. Drain-source voltage slew-rate dV/dt 200 V/ns

Final Data Sheet 4 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

2 Thermal characteristics

Table 4 Thermal characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case RthJC - - 0.5 °C/W Reflow soldering temperature Tsold - - 260 °C MSL3

Final Data Sheet 5 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

3 Electrical characteristics

at Tj = 25 °C, unless specified otherwise Table 5 Static characteristics Table 6 Dynamic characteristics

1 Parameter represents end of use leakage in applications

2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V 3 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate threshold voltage VGS(th) 0.9 0.7 1.2 1.0 1.6 1.4 V IDS = 4.19 mA; VDS = 10 V; Tj =25 °C IDS = 4.19 mA; VDS = 10 V; Tj =125 °C Gate-Source reverse clamping voltage VGS, clamp - - -8 V IGSS = -1 mA Drain-Source leakage current IDSS - 1.6 160 µA VDS = 600 V; VGS = 0 V; Tj = 25 °C VDS = 600 V; VGS = 0 V; Tj = 150 °C Drain-Source leakage current at application conditions1 IDSSapp - 96 - μA VDS = 400 V; VGS = 0 V; Tj = 125 °C Drain-Source on-state resistance RDS(on) - 0.037 0.072 0.042 Ω IG = 83.8 mA; ID = 12 A; Tj = 25 °C IG = 83.8 mA; ID = 12 A; Tj = 150 °C Gate resistance RG,int - 0.56 - Ω LCR impedance measurement; f = fres ; open drain; Tj = 25 °C Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Input capacitance Ciss - 649 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Output capacitance Coss - 97 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Reverse Transfer capacitance Crss - 1.35 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Effective output capacitance, energy related 2 Co(er) - 115 - pF VDS = 0 to 400 V Effective output capacitance, time related 3 Co(tr) - 155 - pF VGS = 0 V; VDS = 0 to 400 V; Id = const Output charge Qoss - 62 - nC VDS = 0 to 400 V Turn- on delay time td(on) - 13 - ns see Figure 23 Turn- off delay time td(off) - 19 - ns see Figure 23 Rise time tr - 8 - ns see Figure 23 Fall time tf - 11 - ns see Figure 23

Final Data Sheet 6 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor Table 7 Gate charge characteristics Table 8 Reverse conduction characteristics

1 Excluding Qoss

Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate charge QG - 8.8 - nC IGS = 0 to 16 mA; VDS= 400 V; ID= 12 A Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Source-Drain reverse voltage VSD - 2 2.5 V VGS = 0 V; ISD = 12 A Pulsed current, reverse IS,pulse - - 90 A IG = 83.8 mA Reverse recovery charge Qrr 1 - 0 - nC IS = 12 A, VDS = 400 V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A

Final Data Sheet 7 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

4 Electrical characteristics diagrams

at Tj = 25 °C, unless specified otherwise Figure 1 Power dissipation Figure 2 Max. transient thermal impedance Ptot=f(Tc) ZthJC=f(tp, D) Figure 3 Safe operating area Figure 4 Safe operating area ID=f(VDS); TC = 25 °C ID=f(VDS); TC = 125 °C 100 150 200 250 300 0 20 40 60 80 100 120 140 160 Ptot [W] TC [oC] 0.01 0.1 1E-6 1E-4 1E-2 1E+0 ZthJC [K/W] tp [s] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.01 0.1 100 1 10 100 1000 ID [A] VDS [V] limited by on-state resistance tp = 10us limited by thermals limited by Vdsmax DC tp = 100us tp = 1ms tp = 20ns 0.01 0.1 100 1 10 100 1000 ID [A] VDS [V] limited by on-state resistance tp = 10us limited by thermals limited by Vdsmax DC tp = 100us tp = 1ms tp = 20ns

Final Data Sheet 12 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor Figure 21 Typ. output charge Figure 22 Typ. Coss stored Energy QOSS = f(VDS) EOSS = f(VDS) 0 200 400 600 QOSS [nC] VDS [V] 0 200 400 600 EOSS [μJ] VDS [V]

Final Data Sheet 13 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

5 Test Circuits

Figure 23 Switching times with inductive load Figure 24 Switching times waveform ID = 12A, RON = 3 Ω; ROFF = 3 Ω; RSS = 100 Ω; CG = 5.3 nF; VDRV = 12V Figure 25 Reverse Channel Characteristics Test Figure 26 Typical Reverse Channel Recovery ID = 12A, RON = 3 Ω; ROFF = 3 Ω; RSS = 100 Ω; CG = 5.3 nF; VDRV = 12V The recovery charge is QOSS only, no additional Qrr Figure 27 Gate current switching waveform G SK S D RSS RON ROFF CG G SK S D RSS RON ROFF CG L 400V VDS ID G SK S D RSS RON ROFF CG G SK S D RSS RON ROFF CG L 400V VDS ID Vds t tVgs Ids IG, avg t IG,pulse IG t

Final Data Sheet 14 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

6 Package Outlines

Figure 28 PG-DSO-20-85 Package Outline, dimensions (mm)

Final Data Sheet 15 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

7 Appendix A

• IFX CoolGaNTM webpage: www.infineon.com/why-coolgan
• IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability
• IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan
• IFX CoolGaNTM applications information: o www.infineon.com/gan-in-server-telecom o www.infineon.com/gan-in-wirelesscharging o www.infineon.com/gan-in-audio o www.infineon.com/gan-in-adapter-charger

Final Data Sheet 16 Rev. 2.1 2023-06-08 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor

8 Revision History

Major changes since the last revision 2.0 2022-12-21 Final release 2.1 2023-06-08 Improved the Tsold rating in table 2 to 260 °C Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

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