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Technical content

Features

 Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI

Applications

Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaN™ reliability white paper and contact Infineon regional support Table 1 Key Performance Parameters at Tj = 25 °C Table 2 Ordering Information Parameter Value Unit VDS,max 600 V RDS(on),max 70 mΩ QG,typ 5.8 nC ID,pulse 60 A Qoss @ 400 V 41 nC Qrr 0 nC Type / Ordering Code Package Marking Related links IGLD60R070D1 PG-LSON-8-1 60R070D1 see Appendix A S S SK G D G SK S S D D D Gate 8 Drain 1,2,3,4 Kelvin Source 7 Source 5,6

Final Data Sheet 2 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Table of Contents

Final Data Sheet 3 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

1 Maximum ratings

at Tj = 25 °C, unless otherwise specified.Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings 1 All devices are 100% tested at I DS = 12.2 mA to assure VDS ≥ 800 V 2 Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation

3 Limits derived from product characterization, parameter not measured during production

4 Ensure that average gate drive current, I G,avg is ≤ 20 mA. Please see figure 27 for IG,avg, IG,pulse and IG details 5 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application 6 We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for details Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Drain Source Voltage, continuous 1 VDS,max - - 600 V VGS = 0 V Drain source destructive breakdown voltage 2 VDS,bd 800 - - V VGS = 0 V, IDS = 12.2 mA Drain source voltage, pulsed 2 VDS,pulse - - 750 650 V V Tj = 25 °C; VGS ≤ 0 V; ≤1 hour of total time Tj = 125 °C, VGS ≤ 0 V; ≤1 hour of total time Switching surge voltage, pulsed 2 VDS,surge - - 750 V DC bus voltage = 700 V; turn off VDS,pulse = 750 V; turn on ID,pulse = 27 A; Tj = 105 °C; f ≤ 100 kHz, t ≤ 100 secs (10 million pulses) Continuous current, drain source ID - - 15 A T C = 25 °C; Pulsed current, drain source 3 4 ID,pulse - - 60 A T C = 25 °C; IG = 26.1 mA; See Figure 3;Figure 5; Pulsed current, drain source 4 5 ID,pulse - - 35 A T C = 125 °C; IG = 26.1 mA; See Figure 4;Figure 6; Gate current, continuous 4 5 6 IG,avg - - 20 mA T j = -55 °C to 150 °C; Gate current, pulsed 4 6 IG,pulse - - 2000 mA T j = -55 °C to 150 °C; tPULSE = 50 ns, f=100 kHz Gate source voltage, continuous 6 VGS -10 - - V T j = -55 °C to 150 °C; Gate source voltage, pulsed 6 VGS,pulse -25 - - V T j = -55 °C to 150 °C; tPULSE = 50 ns, f = 100 kHz; open drain Power dissipation Ptot - - 114 W TC = 25 °C Operating temperature Tj -55 - 150 °C Storage temperature Tstg -55 - 150 °C Max shelf life depends on storage conditions. Drain-source voltage slew-rate dV/dt 200 V/ns

Final Data Sheet 4 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

2 Thermal characteristics

Table 4 Thermal characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case RthJC - - 1.1 °C/W Reflow soldering temperature Tsold - - 245 °C MSL3

Final Data Sheet 5 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

3 Electrical characteristics

at Tj = 25 °C, unless specified otherwise Table 5 Static characteristics Table 6 Dynamic characteristics

1 Parameter represents end of use leakage in applications

2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V 3 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate threshold voltage VGS(th) 0.9 0.7 1.2 1.0 1.6 1.4 V I DS = 2.6 mA; VDS = 10 V; Tj =25 °C IDS = 2.6 mA; VDS = 10 V; Tj =125 °C Drain-Source leakage current IDSS 100 µA VDS = 600 V; VGS = 0 V; Tj = 25 °C VDS = 600 V; VGS = 0 V; Tj = 150 °C Drain-Source leakage current at application conditions1 IDSSapp - 60 - μA VDS = 400 V; VGS = 0 V; Tj = 125 °C Gate-Source leakage current IGSS mA VDS = 0 V; VGS = -10 V; Tj = 25 °C VDS = 0 V; VGS = -10 V; Tj = 125 °C Drain-Source on-state resistance RDS(on) 0.055 0.100 0.070 Ω IG = 26.1 mA; ID = 8 A; Tj = 25 °C IG = 26.1 mA; ID = 8 A; Tj = 150 °C Gate resistance RG,int - 0.78 - Ω LCR impedance measurement; f = fres ; open drain; Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Input capacitance Ciss - 380 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Output capacitance Coss - 72 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Reverse Transfer capacitance C rss - 0.3 - pF VGS = 0 V; VDS = 400 V; f = 1 MHz Effective output capacitance, energy related 2 Co(er) - 80 - pF V DS = 0 to 400 V Effective output capacitance, time related 3 Co(tr) - 102.5 - pF VGS = 0 V; VDS = 0 to 400 V; Id = const Output charge Qoss - 41 - nC V DS = 0 to 400 V Turn- on delay time td(on) - 15 - ns see Figure 23 Turn- off delay time td(off) - 15 - ns see Figure 23 Rise time tr - 9 - ns see Figure 23 Fall time tf - 13 - ns see Figure 23

Final Data Sheet 6 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Table 7 Gate charge characteristics Table 8 Reverse conduction characteristics

1 Excluding Qoss

Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate charge QG - 5.8 - nC IGS = 0 to 10 mA; VDS= 400 V; ID= 8 A Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Source-Drain reverse voltage VSD - 2.2 2.5 V V GS = 0 V; ISD = 8 A Pulsed current, reverse IS,pulse - - 60 A I G = 26.1 mA Reverse recovery charge Qrr 1 - 0 - nC IS = 8 A, VDS = 400 V Reverse recovery time trr - 0 - ns Peak reverse recovery current I rrm - 0 - A

Final Data Sheet 7 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

4 Electrical characteristics diagrams

at Tj = 25 °C, unless specified otherwise Figure 1 Power dissipation Figure 2 Max. transient thermal impedance Ptot=f(Tc) ZthJC=f(tp, D) Figure 3 Safe operating area Figure 4 Safe operating area ID=f(VDS); TC = 25 °C ID=f(VDS); TC = 125 °C 100 120 0 20 40 60 80 100 120 140 160 Ptot [W] TC [oC] 0.01 0.1 1E-6 1E-4 1E-2 1E+0 1E+2 ZthJC [K/W] tp [s] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.01 0.1 100 1 10 100 1000 ID [A] VDS [V] tp = 20 ns tp = 10 μs tp = 100 μs tp = 1 ms DC Limited by RDS(on) 0.01 0.1 100 1 10 100 1000 ID [A] VDS [V] tp = 20 ns tp = 10 μs tp = 100 μs tp = 1 ms DC Limited by RDS(on)

Final Data Sheet 12 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Figure 21 Typ. output charge Figure 22 Typ. Coss stored Energy QOSS = f(VDS) EOSS = f(VDS) 0 100 200 300 400 500 QOSS (nC) VDS (V) 0 100 200 300 400 500 EOSS (µJ) VDS (V)

Final Data Sheet 13 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

5 Test Circuits

Figure 23 Switching times with inductive load Figure 24 Switching times waveform ID = 8A, RON = 10 Ω; ROFF = 10 Ω; RSS = 820 Ω; CG = 2 nF; VDRV = 12V Figure 25 Reverse Channel Characteristics Test Figure 26 Typical Reverse Channel Recovery ID = 8A, RON = 10 Ω; ROFF = 10 Ω; RSS = 820 Ω; CG = 2 nF; VDRV = 12V The recovery charge is QOSS only, no additional Qrr Figure 27 Gate current switching waveform G SK S D RSS RON ROFF CG G SK S D RSS RON ROFF CG L 400V VDS ID G SK S D RSS RON ROFF CG G SK S D RSS RON ROFF CG L 400V VDS ID IG, avg t IG,pulse IG t

Final Data Sheet 14 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

6 Package Outlines

Figure 28 PG-LSON-8-1 Package Outline, dimensions (mm)

Final Data Sheet 15 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

7 Appendix A

 IFX CoolGaNTM webpage: www.infineon.com/why-coolgan  IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability  IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan  IFX CoolGaNTM applications information: o www.infineon.com/gan-in-server-telecom o www.infineon.com/gan-in-wirelesscharging o www.infineon.com/gan-in-audio o www.infineon.com/gan-in-adapter-charger

Final Data Sheet 16 Rev. 2.1 2020-01-16 IGLD60R070D1 600V CoolGaN™ enhancement-mode Power Transistor

8 Revision History

Major changes since the last revision 2.0 2018-10-12 Final version release 2.1 2020-01-16 Added V DS,bd, VDS,pulse , VDS,surge specifications in maximum ratings table of page3 Revision Date Description of changes

81726 München, Germany

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