IGK080B041S INFINEON | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
- E-mode bidirectional transistor - normally OFF switch
- Drain-to-Drain configuration
- Bidirectional blocking capability
- Low on-resistance, low gate charge, low output charge
- Qualified according to JEDEC for target applications 2) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation Value 1) For both directions of current flow: from D1 to D2 and D2 to D1. Type Package IGK080B041S SG-UFWLB-16 Marking BF1 V A nCQoss,Typ QG,Typ Qrr 6.0 mW 5.5 nC 4.8 nC Product Summary VDD.max RDD(on),Typ ID Rev. 0.2 - Preliminary Datasheet page 1 2024-06-28
Parameter Symbol Conditions Unit Storage temperature T stg -40 ... 150 Operating temperature T j -40 - 125 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC top - 26 - °C/W Thermal resistance, junction - bottom R thJC bottom - 4 - Thermal resistance, junction - ambient R thJA 6 cm² cooling area3) - 62 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Gate threshold voltage V GD(th) V DD=V GD 1.2 2.3 2.9 V Drain-Drain leakage current I DDS V DD=40 V, V GD=0 V, T j=25 °C - 19 Gate-Drain leakage current I GDS V GD=5 V, T j=25 °C - 17 µA V GD= 5 V, T j=85 °C - 43 V GD=-4 V, T j=25 °C - 0.7 nA V GD=-4 V, T j=85 °C - 0.9 Drain-drain on-state resistance R DD(on) V GD=5 V, I D=10 A - 6.0 8.0 mW Gate resistance5) R G - 1.2 - W Value Values Rev. 0.2 - Preliminary Datasheet page 2 2024-06-28 - nA
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics5) Input capacitance C iss - 387 - pF Output capacitance C oss - 154 - Reverse transfer capacitance Crss - 98 - Gate Charge Characteristics Gate to Drain 1 charge Q gd1 V D1D2=20 V, I D1D2=10 A - 2.9 nC Gate to Drain 1 charge Q gd1 V D2D1=20 V, I D2D1=10 A - 0.7 - Gate to Drain 2 charge Q gd2 V D2D1=20 V, I D2D1=10 A - 2.9 Gate to Drain 2 charge Q gd2 V D1D2=20 V, I D1D2=10 A - 0.7 - Gate charge total Q g V DD=20 V, I D=10 A - 5.5 - nC Output charge5) Q oss V DD=20 V, V GD=0 V - 4.8 nC 5) Defined by design. Not subject to production test. Values V GD=0 V, V DD=20 V, f =1 MHz Rev. 0.2 - Preliminary Datasheet page 3 2024-06-28
17.01.2024 DOCUMENT NO. Rev. 0.2 - Preliminary Datasheet
Revision History
Revision: Rev 0.3 - 17.01.2024 Tape and Reel Rev. 0.2 - Preliminary Datasheet
Rev. 0.2 - Preliminary Datasheet
Revision: Rev 0.2 - 28.06.2024 Previous Revision Revision Date Subjects (major changes since last revision) - - - Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ ™, TRENCHSTOP™, TriCore™. Trademarks updated August 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG
81726 München, Germany
© 2024 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systemsare intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other persons may be endangered. page 7 2024-06-28 Rev. 0.2 - Preliminary Datasheet