IGD15N65T6 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 13
Technical content
Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3 www.infineon.com 2020-04-20 IGD15N65T6 TRENCHSTOP™IGBT6 IGBTintrenchandfield-stoptechnology FeaturesandBenefits:
- VerylowVCE(sat)1.5V(typ.)
- Maximumjunctiontemperature175°C
- Shortcircuitwithstandtime3µs Trenchandfield-stoptechnologyfor650Vapplicationsoffers:
- verytightparameterdistribution
- highruggedness,temperaturestablebehavior
- lowVCEsatandpositivetemperaturecoefficient
- LowgatechargeQG
- Pb-freeleadplating;RoHScompliant
- CompleteproductspectrumandPLECSModels: www.infineon.com/igbt PotentialApplications: Drives
- GPD(generalpurposedrives) Majorhomeappliances
- Airconditioning
- Othermajorhomeappliances Smallhomeappliances
- Othersmallhomeappliances ProductValidation: Qualifiedforindustrialapplicationsaccordingto therelevanttestsofJEDEC47/20/22 G C E G E C KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IGD15N65T6 650V 15A 1.5V 175°C G15ET6 PG-TO252-3
Datasheet 2 V2.3 2020-04-20 IGD15N65T6 TRENCHSTOP™IGBT6 TableofContents
Datasheet 3 V2.3 2020-04-20 IGD15N65T6 TRENCHSTOP™IGBT6 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 30.0 18.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 57.5 A TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 57.5 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V Short circuit withstand time VGE=15.0V,VCC≤360V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC µs PowerdissipationTc=25°C PowerdissipationTc=100°C Ptot 100.0 50.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 1.50 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 50 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=11.5A Tvj=25°C Tvj=125°C Tvj=150°C 1.50 1.65 1.75 1.90 V Gate-emitter threshold voltage VGE(th) IC=0.20mA,VCE=VGE 4.8 5.6 6.4 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=150°C 360 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=11.5A - 11.3 - S
Datasheet 4 V2.3 2020-04-20 IGD15N65T6 TRENCHSTOP™IGBT6 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 1020 - Output capacitance Coes - 50 - Reverse transfer capacitance Cres - 20 - VCE=25V,VGE=0V f=1000kHz pF Gate charge QG VCC=520V,IC=11.5A, VGE=15V - 37.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 30 - ns Rise time tr - 22 - ns Turn-off delay time td(off) - 117 - ns Fall time tf - 42 - ns Turn-on energy Eon - 0.23 - mJ Turn-off energy Eoff - 0.11 - mJ Total switching energy Ets - 0.34 - mJ Tvj=25°C, VCC=400V,IC=11.5A, VGE=0.0/15.0V, RG(on)=47.0Ω ,RG(off)=47.0Ω , Lσ=30nH,Cσ=150pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 27 - ns Rise time tr - 23 - ns Turn-off delay time td(off) - 135 - ns Fall time tf - 67 - ns Turn-on energy Eon - 0.32 - mJ Turn-off energy Eoff - 0.18 - mJ Total switching energy Ets - 0.50 - mJ Tvj=150°C, VCC=400V,IC=11.5A, VGE=0.0/15.0V, RG(on)=47.0Ω ,RG(off)=47.0Ω , Lσ=30nH,Cσ=150pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.
Datasheet 10 V2.3 2020-04-20 IGD15N65T6 TRENCHSTOP™IGBT6 2.5 REVISION 05-02-2016 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm 2.5 DOCUMENT NO. Z8B00003328MILLIMETERS 4.57 (BSC) 2.29 (BSC) D N H e E 1.18 0.51 0.89 5.02 9.40 6.35 4.32 5.97 A DIM c b 4,95 MIN 2.16 0.64 0.46 0.65 0.40 0.00 1.78 1.02 5.21 5.84 6.22 6.73 1.27 10.48 5.50 MAX 2.41 0.15 1.15 0.61 0.89 0.98 L
Datasheet 11 V2.3 2020-04-20 IGD15N65T6 TRENCHSTOP™IGBT6 t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions
Datasheet 12 V2.3 2020-04-20 IGD15N65T6 TRENCHSTOP™IGBT6 RevisionHistory IGD15N65T6 Revision:2020-04-20,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2020-03-16 Final Data sheet 2.3 2020-04-20 Final
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2020. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.