IGD06N60T INFINEON | Alldatasheet

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TRENCHSTOP™ Series q IFAG IPC TD VLS 1 Rev. 2.2, 20.09.2013 Low Loss IGBT: IGBT in TRENCHSTOP ™ and Fieldstop technology Features:  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior  Low EMI  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:  Variable Speed Drive for washing machines and air conditioners  Buck converters Type VCE IC;Tc=100°C VCE(sat),Tj=25°C Tj,max Marking Package IGD06N60T 600V 6A 1.5V 175C G06T60 PG-TO252-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, Tj ≥ 25C VC E 600 V DC collector current, limited by Tjmax TC = 25C TC = 100C IC 12 6 A Pulsed collector current, tp limited by Tjmax IC p ul s 18 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 18 Gate-emitter voltage VG E 20 V Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C tS C 5 s Power dissipation TC = 25C Pt o t 88 W Operating junction temperature Tj -40...+175 CStorage temperature Ts t g -55...+150 Soldering temperature reflow soldering, MSL1 260

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO252-3 (D-PAK)

TRENCHSTOP™ Series q IFAG IPC TD VLS 2 Rev. 2.2, 20.09.2013 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case Rt h J C 1.7 K/W Thermal resistance, junction – ambient Rt h J A 62 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unitmin. typ. max. Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VG E=0V, IC =0.25mA 600 - - V Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC =6A Tj =25 C Tj =175 C 1.5 1.8 2.05 Gate-emitter threshold voltage VG E ( t h) IC =0.18mA, VC E=VG E 4.1 4.6 5.7 Zero gate voltage collector current IC E S VC E=600V , VG E=0V Tj =25 C Tj =175 C 700 µA Gate-emitter leakage current IG E S VC E=0V, VG E=20V - - 100 nA Transconductance gf s VC E=20V, IC =6A - 3.6 - S Integrated gate resistor RG i n t none Ω Dynamic Characteristic Input capacitance Ci s s VC E=25V, VG E=0V, f=1MHz - 368 - pF Output capacitance Co s s - 28 - Reverse transfer capacitance Cr s s - 11 - Gate charge QG a t e VC C=480V, IC =6A VG E=15V - 42 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7 - nH Short circuit collector current1) IC ( S C ) VG E=15V, tS C5s VC C = 400V, Tj = 25 C - 55 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

TRENCHSTOP™ Series q IFAG IPC TD VLS 3 Rev. 2.2, 20.09.2013 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=25 C, VC C=400V, IC =6A, VG E=0/15V, rG =23 , L=60nH, C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode used IDP06E60 - 9 - ns Rise time tr - 6 - Turn-off delay time td ( o f f ) - 130 - Fall time tf - 58 - Turn-on energy Eo n - 0.09 - mJ Turn-off energy Eo f f - 0.11 - Total switching energy Et s - 0.2 - Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unit min. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=175 C, VC C=400V, IC =6A, VG E=0/15V, rG = 23  L=60nH, C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode used IDP06E60 - 9 - ns Rise time tr - 8 - Turn-off delay time td ( o f f ) - 165 - Fall time tf - 84 - Turn-on energy Eo n - 0.14 - mJ Turn-off energy Eo f f - 0.18 - Total switching energy Et s - 0.335 -

Figure 21. IGBT transient thermal

TRENCHSTOP™ Series q IFAG IPC TD VLS 10 Rev. 2.2, 20.09.2013 PG-TO252 -3

TRENCHSTOP™ Series q IFAG IPC TD VLS 11 Rev. 2.2, 20.09.2013 I r r m 90% I r r m 10% Ir r m di /dt F t r r I F i,v tQ S Q F t S t F V R di /dt r r Q =Q Q r r S F t =t t r r S F Figure C. Definition of diodes switching characteristics p(t) 1 2 n T (t)j n n TC r r r r r r Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses

TRENCHSTOP™ Series q IFAG IPC TD VLS 12 Rev. 2.2, 20.09.2013 Published by Infineon Technologies AG

81726 Munich, Germany

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