IGCM06B60HA_15 INFINEON | Alldatasheet

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Technical content

For Power Management Application 1 Ver. 1.3, 2014-06-01 Datasheet Control Integrated POwer System (CIPOS™) IGCM0 6B 60H A

CIPOS™ IGCM06B60HA Datasheet 2 Ver. 1.3, 2014-06-01 Table of Contents

CIPOS™ IGCM06B60HA Datasheet 3 Ver. 1.3, 2014-06-01 CIPOS™ Control Integrated POwer System Dual In-Line Intelligent Power Module 3Φ-bridge 600V / 6A

Features

Fully isolated Dual In-Line molded module

  • Infineon reverse conducting IGBTs with monolithic body diode
  • Optimized diodes for single phase diode bridge rectifier
  • Rugged SOI gate driver technology with stability against transient and negative voltage
  • Allowable negative VS potential up to - 11V for signal transmission at VBS=15V
  • Integrated bootstrap functionality
  • Over current shutdown
  • Under-voltage lockout at all channels
  • Low side common emitter
  • Cross-conduction prevention
  • All of 6 switches turn off during protection
  • Lead-free terminal plating; RoHS compliant Target Applications
  • Dish washers
  • Refrigerators
  • Fans
  • Low power motor drives

Description

The CIPOS™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control three phase AC motors and permanent magnet motors in variable speed drives for applications like a refrigerator and a dish washer. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI - save control and overload protection. The features of Infineon reverse conducting IGBT are combined with an optimized SOI gate driver for excellent electrical performance. System Configuration

  • 3 half-bridges with reverse conducting IGBT
  • Single phase diode bridge rectifier
  • 3Φ SOI gate driver
  • Pin-to-heasink creepage distance typ. 1.6mm

CIPOS™ IGCM06B60HA Datasheet 5 Ver. 1.3, 2014-06-01 Pin Assignment Pin Number Pin Name Pin Description

1 VS(U) U-phase high side floating IC supply offset voltage

2 VB(U) U-phase high side floating IC supply voltage

3 VS(V) V-phase high side floating IC supply offset voltage

4 VB(V) V-phase high side floating IC supply voltage

5 VS(W) W-phase high side floating IC supply offset voltage

6 VB(W) W-phase high side floating IC supply voltage

7 HIN(U) U-phase high side gate driver input

8 HIN(V) V-phase high side gate driver input

9 HIN(W) W-phase high side gate driver input

10 LIN(U) U-phase low side gate driver input

11 LIN(V) V-phase low side gate driver input

12 LIN(W) W-phase low side gate driver input

13 VDD Low side control supply

14 VFO Fault output

15 ITRIP Over-current shutdown input

16 VSS Low side control negative supply

17 N Low side common emitter

18 W Motor W-phase output

19 V Motor V-phase output

20 U Motor U-phase output

21 P Positive bus input voltage

22 S Single phase diode bridge rectifier S input

23 R Single phase diode bridge rectifier R input

24 NR Negative bus voltage

HIN(U,V,W) and LIN (U,V,W) (Low side and high side control pins, Pin 7 - 12) These pins are positive logic and they are responsible for the control of the integrated IGBT . The Schmitt -trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull-down resistor of about 5kΩ is internally provided to pre-bias inputs during supply start -up and a zener clamp is provided for pin protection purposes. Input Schmitt- trigger and noise filter provide beneficial noise rejection to short input pulses. The noise filter suppresses control pulses which are below the filter time t FILIN. The filter acts according to Figure 4. UZ=10.5V INPUT NOISE FILTER Ω≈ k5 Schmitt-Trigger SWITCH LEVEL VIH; VIL LINx HINx Figure 3: Input pin structure HIN LIN HO LOlow high tFILIN tFILINa) b) HIN LIN HO LO Figure 4: Input filter timing diagram

CIPOS™ IGCM06B60HA Datasheet 6 Ver. 1.3, 2014-06-01 It is recommended for proper work of CIPOS™ not to provide input pulse-width lower than 1us. The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on- state of two gate drivers of the same leg (i.e. HO 1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only former activated one is activated so that the leg is kept steadily in a safe state. A minimum deadtime insertion of typ ically 380ns is also provided by driver IC, in order to reduce cross - conduction of the external power switches. VFO (Fault-output, Pin 14) The VFO pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. Figure 5: Internal circuit at pin VFO ITRIP (Over current detection function, Pin 15) CIPOS™ provides an over current detection function by connecting the ITRIP input with the motor current feedback. The ITRIP comparator threshold (typ. 0.47V) is referenced to VSS ground. An input noise filter (typ: tITRIPMIN = 530ns) prevents the driver to detect false over-current events. Over current detection generat es a shut down of all outputs of the gate driver after the shutdown propagation delay of typically 1000ns. The fault-clear time is set to typical 65us. VDD, VSS ( Low side control supply and reference, Pin 13, 16) VDD is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground. The under -voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1V is present. The IC shuts down all the gate drivers ’ power outputs, when the V DD supply voltage is below VDDUV- = 10. 4V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB(U,V,W) and VS (U,V,W) (High side supplies, Pin 1 - 6) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter voltage. Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. The under -voltage detection operates with a rising supply threshold of typical V BSUV+ = 12.1V and a falling threshold of VBSUV- = 10.4V. VS(U,V,W) provide a high robustness against negative voltage in respect of VSS of - 50V transiently. This ensures very stable designs even under rough conditions. N (Low side common emitter, Pin 17) The low side common emitter is available for current measurement. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. W, V, U (High side emitter and low side collector, Pin 18 - 20) These pins are motor U, V, W input pins P, NR (Positive bus input voltage and negative bus voltage, Pin 21, 24) The high side IGBT are connected to the bus voltage. It is noted that the bus voltage does not exceed 450 V. The bus voltage is referenced to NR ground. R, S (Single phase diode bridge rectifier input pins, Pin 22, 23) Rectifier input pins for connecting to the grid line. VFO CIPOS™ VSS from uv detection VDD R ON FLT from ITRIP Latch

CIPOS™ IGCM06B60HA Datasheet 7 Ver. 1.3, 2014-06-01 Absolute Maximum Ratings (VDD = 15V and TJ = 25°C, if not stated otherwise) Module Section Description Condition Symbol Value Unit min max Storage temperature range Tstg -40 125 °C Insulation test voltage RMS, f = 60Hz, t =1min VISOL 2000 - V Operating case temperature range Refer to Figure 6 TC -40 100 °C Inverter Section Description Condition Symbol Value Unit min max Max. blocking voltage IC = 250µA VCES 600 - V DC link supply voltage of P-N Applied between P-N VPN - 450 V DC link supply voltage (surge) of P-N Applied between P-N VPN(surge) - 500 V Output current TC = 25°C, TJ < 150°C TC = 100°C, TJ < 150°C IC -6 4 A Maximum peak output current less than 1ms IC -12 12 A Short circuit withstand time1 VDC ≤ 400V, TJ = 150°C tSC - 5 µs Power dissipation per IGBT Ptot - 19.3 W Operating junction temperature range TJ -40 150 °C Single IGBT thermal resistance, junction-case RthJC - 6.47 K/W Rectifier Diode Section Description Condition Symbol Value Unit min max Maximum repetitive reverse voltage VRRM 900 - V RMS forward current TC = 100°C, TJ < 150°C IFRM - 10 A Peak surge forward current 50Hz, Non repetitive TC = 25°C TC = 125°C IFSM - 130 110 A I2t - value tp = 10ms TC = 25°C TC = 125°C I2t - 84

60 A2s

Operating junction temperature range TJ(RD) -40 150 °C Single Diode thermal resistance, junction-case RthJC(RD) - 6.2 K/W 1 Allowed number of short circuits: <1000; time between short circuits: >1s.

CIPOS™ IGCM06B60HA Datasheet 8 Ver. 1.3, 2014-06-01 Control Section Description Condition Symbol Value Unit min max Module supply voltage VDD -1 20 V High side floating supply voltage (VB vs. VS) VBS -1 20 V Input voltage LIN, HIN, ITRIP VIN VITRIP 10 V Switching frequency fPWM - 20 kHz Recommended Operation Conditions All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. Description Symbol Value Unit min typ max DC link supply voltage of P-N VPN 0 - 400 V High side floating supply voltage (VB vs. VS) VBS 13.5 - 18.5 V Low side supply voltage VDD 14.0 16 18.5 V Control supply variation ΔVBS ΔVDD -1 - 1

1 V/µs

Logic input voltages LIN,HIN,ITRIP VIN VITRIP 0 - 5 5 V Between VSS - N (including surge) VSS -5 - 5 V Figure 6: TC measurement point1 1Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and brings wrong or different information.

CIPOS™ IGCM06B60HA Datasheet 9 Ver. 1.3, 2014-06-01 Static Parameters (VDD = 15V and TJ = 25°C, if not stated otherwise) Description Condition Symbol Value Unit min typ max Collector-Emitter saturation voltage Iout = 4A TJ = 25°C 150°C VCE(sat) - 1.6 1.8 2.0 - V Emitter-Collector forward voltage Iout = -4A TJ = 25°C 150°C VF - 1.75 1.8 2.2 V Rectifier diode forward voltage Iin= -10A 25°C 150°C VFR - 0.95 1.4 V Collector-Emitter leakage current VCE = 600V ICES - - - 1 mA Logic "1" input voltage (LIN,HIN) VIH - 2.1 2.5 V Logic "0" input voltage (LIN,HIN) VIL 0.7 0.9 - V ITRIP positive going threshold VIT,TH+ 400 470 540 mV ITRIP input hysteresis VIT,HYS 40 70 - mV VDD and VBS supply under voltage positive going threshold VDDUV+ VBSUV+ 10.8 12.1 13.0 V VDD and VBS supply under voltage negative going threshold VDDUV- VBSUV- 9.5 10.4 11.2 V VDD and VBS supply under voltage lockout hysteresis VDDUVH VBSUVH 1.0 1.7 - V Input clamp voltage (HIN, LIN, ITRIP) Iin = 4mA VINCLAMP 9.0 10.1 12.5 V Quiescent VBx supply current (VBx only) HIN = 0V IQBS - 300 500 µA Quiescent VDD supply current (VDD only) LIN = 0V, HINX=5V IQDD - 370 900 µA Input bias current VIN = 5V IIN+ - 1 1.5 mA Input bias current VIN = 0V IIN- - 2 - µA ITRIP input bias current VITRIP = 5V IITRIP+ - 65 150 µA VFO input bias current VFO = 5V, VITRIP = 0V IFO - 2 - nA VFO output voltage IFO = 10mA, VITRIP = 1V VFO - 0.5 - V

CIPOS™ IGCM06B60HA Datasheet 10 Ver. 1.3, 2014-06-01 Dynamic Parameters (VDD = 15V and TJ = 25°C, if not stated otherwise) Description Condition Symbol Value Unit min typ max Turn-on propagation delay time VLIN,HIN = 5V; Iout = 4A, VDC = 300V ton - 650 - ns Turn-on rise time tr - 20 - ns Turn-on switching time tc(on) 100 ns Reverse recovery time trr 130 ns Turn-off propagation delay time VLIN,HIN = 0V; Iout = 4A, VDC = 300V toff - 680 - ns Turn-off fall time tf - 180 - ns Turn-off switching time tc(off) 220 ns Short circuit propagation delay time From VIT,TH+ to 10% ISC tSCP - 1420 - ns Input filter time ITRIP VITRIP = 1V tITRIPmin - 530 - ns Input filter time at LIN, HIN for turn on and off VLIN,HIN = 0V & 5V tFILIN - 290 - ns Fault clear time after ITRIP-fault VITRIP = 1V tFLTCLR 40 65 200 µs Deadtime between low side and high side DTPWM 1.0 - - µs Deadtime of gate drive circuit DTIC 380 ns IGBT turn-on energy (includes reverse recovery of diode) VDC = 300V, IC = 4A, TJ = 25°C 150°C Eon - 130 - µJ IGBT turn-off energy VDC = 300V, IC = 4A, TJ = 25°C 150°C Eoff - 120 190 - µJ Diode recovery energy VDC = 300V, IC = 4A, TJ = 25°C 150°C Erec - - µJ Bootstrap Parameters (TJ = 25°C, if not stated otherwise) Description Condition Symbol Value Unit min typ max Repetitive peak reverse voltage VRRM 600 V Bootstrap resistance of U-phase1 VS2 or VS3 = 300V, TJ = 25°C VS2 and VS3 = 0V, TJ = 25°C VS2 or VS3 = 300V, TJ = 125°C VS2 and VS3 = 0V, TJ = 125°C RBS1 Ω Reverse recovery time IF = 0.6A, di/dt = 80A/µs trr_BS 50 ns Forward voltage drop IF = 20mA, VS2 and VS3 = 0V VF_BS 2.6 V 1 RBS2 and RBS3 have same values to RBS1.

CIPOS™ IGCM06B60HA Datasheet 11 Ver. 1.3, 2014-06-01 Mechanical Characteristics and Ratings Description Condition Value Unit min typ max Mounting torque M3 screw and washer 0.59 0.69 0.78 Nm Flatness Refer to Figure 7 -50 - 100 µm Weight - 6.15 - g Figure 7: Flatness measurement position

CIPOS™ IGCM06B60HA Datasheet 13 Ver. 1.3, 2014-06-01 Electrical characteristic TJ=25℃ VDD=13V VDD=15V VDD=20V Ic, Collector - Emitter current [A] VCE(sat), Collector - Emitter voltage [V] Typ. Collector – Emitter saturation voltage 0 1 2 3 4 5 6 7 8 9 10 11 12 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VDC=300V VDD=15V High side @TJ=25℃ High side @TJ=150℃d Low side @TJ=25℃dd Low side @TJ=150℃d Eon, Turn on switching energy loss [mJ] Ic, Collector current [A] Typ. Turn on switching energy loss 0 1 2 3 4 5 6 7 8 9 10 11 12 600 650 700 750 800 850 900 VDC=300V VDD=15V High side @TJ=25℃dd High side @TJ=150℃d Low side @TJ=25℃dd Low side @TJ=150℃d ton, Turn on propagation delay time [ns] Ic, Collector current [A] Typ. Turn on propagation delay time 0 1 2 3 4 5 6 7 8 9 10 11 12 100 200 300 400 500 600 700 800 900 1000 1100 High side @TJ=25℃ High side @TJ=150℃ Low side @TJ=25℃ Low side @TJ=150℃ VDC=300V VDD=15V tc(off), Turn off switching time [ns] Ic, Collector current [A] Typ. Turn off switching time VDD=15V TJ=25℃ TJ=150℃ Ic, Collector - Emitter current [A] VCE(sat), Collector - Emitter voltage [V] Typ. Collector – Emitter saturation voltage 0 1 2 3 4 5 6 7 8 9 10 11 12 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 High side @TJ=25℃ High side @TJ=150℃d Low side @TJ=25℃dd Low side @TJ=150℃d VDC=300V VDD=15V Eoff, Turn off switching energy loss [mJ] Ic, Collector current [A] Typ. Turn off switching energy loss 0 1 2 3 4 5 6 7 8 9 10 11 12 100 150 200 250 300 350 400 VDC=300V VDD=15V High side @TJ=25℃dd High side @TJ=150℃d Low side @TJ=25℃dd Low side @TJ=150℃d tc(on), Turn on switching time [ns] Ic, Collector current [A] Typ. Turn on switching time 0 1 2 3 4 5 6 7 8 9 10 11 12 100 150 200 250 300 350 400 450 500 High side @TJ=25℃dd High side @TJ=150℃d Low side @TJ=25℃ddd Low side @TJ=150℃d VDC=300V VDD=15V trr, Reverse recovery time [ns] Ic, Collector current [A] Typ. Reverse recovery time RC IGBT @TJ=25℃ RC IGBT @TJ=150℃ Rectifier @TJ=25℃ Rectifier @TJ=150℃ IF, Anode - Cathode current [A] VF, Forward voltage [V] Typ. Anode - Cathode forward voltage 0 1 2 3 4 5 6 7 8 9 10 11 12 100 120 140 160 180 200 VDC=300V VDD=15V High side @TJ=25℃dd High side @TJ=150℃d Low side @TJ=25℃dd Low side @TJ=150℃d Erec, Reverse recovery energy loss [uJ] Ic, Collector current [A] Typ. Reverse recovery energy loss 0 1 2 3 4 5 6 7 8 9 10 11 12 600 800 1000 1200 1400 1600 1800 VDC=300V VDD=15V High side @TJ=25℃ High side @TJ=150℃ Low side @TJ=25℃ Low side @TJ=150℃ toff, Turn off propagation delay time [ns] Ic, Collector current [A] Typ. Turn off propagation delay time 1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 D : duty ratio D=50% D=20% D=10% D=5% D=2% Single pulse ZthJC, RC-IGBT transient thermal resistance [K/W] tP, Pulse width [sec.] IGBT transient thermal resistance at all six IGBTs operation

CIPOS™ IGCM06B60HA Datasheet 14 Ver. 1.3, 2014-06-01 Package Outline

CIPOS™ IGCM06B60HA Datasheet 15 Ver. 1.3, 2014-06-01

Revision History

Previous Version: Datasheet Ver. 1.2 Major changes since the last revision Page or Reference Description of change

8 Figure 6 updated

Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, IsoPACK™, i -Wafer™, MIPAQ™, ModSTACK™, my -d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimeP ACK™, PrimeSTACK™, PROFET™, PRO -SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. ANSI™ of American National Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ o f Bluetooth Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve Incorporated. MCS™ of Intel Corp. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Associa tion Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™ of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius S atellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/O pen Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex. Last Trademarks Update 2014-07-17 Edition 2014-06-01 Published by Infineon Technologies AG

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