IGC50T120T8RL INFINEON | Alldatasheet
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TRENCHSTOPTM IGBT4 Low Power Chip IGC50T120T8RL
L7663P, L7663V 2 Rev. 2.1, 20.08.2015 Table of Contents
L7663P, L7663V 3 Rev. 2.1, 20.08.2015 TRENCHSTOPTM IGBT4 Low Power Chip Features: 1200V trench & field stop technology Low switching losses Positive temperature coefficient Easy paralleling Recommended for: Low / medium power modules Applications: Low / medium power drives Chip Type VCE ICn 1 Die Size Package IGC50T120T8RL 1200V 50A 7.25mm x 6.84mm Sawn on foil Mechanical Parameters Die size 7.25 x 6.84 mm2 Emitter pad size See chip drawing Gate pad size 0.811 x 1.31 Area total 49.59 Thickness 115 µm Wafer size 200 mm Maximum possible chips per wafer 531 Passivation frontside Photoimide Pad metal 3200nm AlSiCu Backside metal Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, ≤500µm Reject ink dot size 0.65mm; max. 1.2mm Storage environment for original and sealed MBB bags Ambient atmosphere air, temperature 17°C – 25°C, <6 months for open MBB bags Acc. to IEC62258-3: atmosphere >99% Nitrogen or inert gas, humidity <25%RH, temperature 17°C – 25°C, <6 months 1 Nominal collector current at TC=100°C for chip packaged in power modules, see application example cited on page 5.
L7663P, L7663V 4 Rev. 2.1, 20.08.2015 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, Tvj=25C VCE 1200 V DC collector current, limited by Tvj max 2 IC - A Pulsed collector current, tp limited by Tvj max 3 IC,puls 150 A Gate-emitter voltage VGE 20 V Operating junction temperature Tvj -40 ... +175 °C Short circuit data 3 / 4 VGE=15V, VCC=800V, Tvj=150°C tsc 10 µs Static Characteristics (tested on wafer), Tvj=25C Parameter Symbol Conditions Value Unit min. typ. max. Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=1.7mA 1200 - - V Collector-emitter saturation voltage VCEsat VGE=15V, IC=50A 1.58 1.85 2.07 Gate-emitter threshold voltage VGE(th) IC=1.7mA, VGE=VCE 5.3 5.8 6.3 Zero gate voltage collector current ICES VCE=1200V, VGE=0V - - 1 µA Gate-emitter leakage current IGES VCE=0V, VGE=20V - - 120 nA Integrated gate resistor rG 4 Electrical Characteristics 3 Parameter Symbol Conditions Value Unit min. typ. max. Collector-emitter saturation voltage VCEsat VGE=15V, IC=50A, Tvj=150C - 2.25 - V Input capacitance Cies VCE=25V, VGE=0V, f=1MHz Tvj=25C - 2800 - pF Reverse transfer capacitance Cres - 100 - 2 Depending on thermal properties of assembly. 3 Not subject to production test - verified by design/characterization. 4 Allowed number of short circuits: <1000; time between short circuits: >1s.
L7663P, L7663V 5 Rev. 2.1, 20.08.2015 Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
L7663P, L7663V 6 Rev. 2.1, 20.08.2015 Chip Drawing E = Emitter G = Gate T = Test pad do not contact G E E T
L7663P, L7663V 7 Rev. 2.1, 20.08.2015 Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which are relevant for the application at package level, including RBSOA and SCSOA.
Description
AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Revision Subjects (major changes since last revision) Date 2.0 Final data sheet 18.02.2015 2.1 Update disclaimer 20.08.2015 Relevant Application Notes
L7663P, L7663V 8 Rev. 2.1, 20.08.2015 Published by Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015. All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any an d all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer ’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information o n the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
L7663P, L7663V 9 Rev. 2.1, 20.08.2015 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG