IGC11T120T6L INFINEON | Alldatasheet
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Technical content
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007 IGBT4 Low Power Chip This chip is used for:
- low / medium power modules FEATURES:
- 1200V Trench + Field Stop technology
- low switching losses
- positive temperature coefficient
- easy paralleling Applications:
- low / medium power drives G C E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL PARAMETER Raster size 3.48 x 3.19 Emitter pad size 1.965 x 1.716 Gate pad size 0.608 x 0.608 Area total / active 11.1 / 5.5 mm2 Thickness 115 µm Wafer size 150 mm Flat position 0 grd Max.possible chips per wafer 1353 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag – system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size ∅ 0.65mm ; max 1.2mm Recommended storage environment Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007 MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter voltage , Tj=25 °C VCE 1200 V DC collector current, limited by T jmax IC 1 ) A Pulsed collector current, t p limited by Tjmax Icpuls 24 A Gate-Emitter voltage VGE ±20 V Operating junction temperature Tj -40 ... +175 °C Short circuit data 2 ) VGE = 15V, VCC = 800V, Tvj = 150°C tp 10 µs Reverse bias safe operating area 2 ) (RBSOA) IC max = 16 A, VCE max = 1200V, Tvj max = 150°C 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characteriza tion STATIC CHARACTERISTICS (tested on wafer ), Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 0.5 mA 1200 Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=8A 1.6 1.85 2.1 Gate-Emitter threshold voltage VGE(th) IC=0.3mA , VGE=VCE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V , VGE=0V 1 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 120 nA Integrated gate res istor RGint - Ω ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization ) Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss 490 Output capacitance Coss 50 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz 30 pF
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007 SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design /characterization) Value Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time td(on) tbd Rise time tr tbd Turn-off delay time td(off) tbd Fall time tf Tj =125 °C VCC =600V, IC =8 A, VGE =- 15/15V, R G= --- Ω tbd ns 1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007 CHIP DRAWING
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007 FURTHER EL ECTRICAL CHARACTERISTICS This chip data sheet refers to the device data sheet tbd
DESCRIPTION
AQL 0,65 for visual inspection according to failure catalog ue Electrostatic Discharge Sensitive Device according to MIL -STD 883 Test-Normen Villach/Prüffe ld Published by Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non -infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is a n approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world -wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons m ay be endangered.