IGC109T120T6RH INFINEON | Alldatasheet
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Technical content
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1 , 31.10.2007 IGBT4 High Power Chip This chip is used for:
- medium / high power modules Features:
- 1200V Trench + Field stop technology
- low VCE(sat)
- soft turn off
- positive temperature coefficient
- easy paralleling Applications:
- medium / high power drives G C E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHANICAL PARAMETER Raster size 7.48 x 14.61 Emitter pad size (incl. gate pad) 4 x (2.761 x 6.458) Gate pad size 0.811 x 1.31 Area total / active 109.3 / 82.6 mm2 Thickness 140 µm Wafer size 150 mm Flat position 90 grd Max.possible chips per wafer 126 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag – system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size ∅ 0.65mm ; max 1.2mm Recommended storage e nvironment Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1 , 31.10.2007 MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter voltage , Tj=25 °C VCE 1200 V DC collector current, limited by T jmax IC 1 ) A Pulsed collector current, t p limited by Tjmax Icpuls 330 A Gate-Emitter voltage VGE ±20 V Operating junction temperature Tj -40 ... +175 °C Short circuit data 2 ) VGE = 15V, VCC = 800V, Tvj = 150°C tp 10 µs Reverse bias safe operating area 2 ) (RBSOA) IC max = 220A, VCE max = 1200V, Tvj max = 150°C 1 ) depending on thermal properties of assembly 2 ) not subject to producti on test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer ), Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 4.1 mA 1200 Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=110A 1.5 1.7 2.0 Gate-Emitter threshold voltage VGE(th) IC=4.1mA , VGE=VCE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V , VGE=0V 14 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 600 nA Integrated gate resistor RGint 7.5 Ω ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization ) Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss 6800 Output capacitance Coss 440 Reverse transfer capacitance Crss VCE =25V , VGE =0V, f=1MHz 375 pF
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1 , 31.10.2007 SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design /characterization) Value Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time td(on) tbd Rise time tr tbd Turn-off delay time td(off) tbd Fall time tf Tj =125 °C VCC =600V, IC=11 0A, VGE =- 15/15V, R G= --- Ω tbd ns 1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1 , 31.10.2007 CHIP DRAWING
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1 , 31.10.2007 FURTHER ELECTRICAL CHARACTERISTICS This chip data sheet refers to the device data sheet tbd
DESCRIPTION
AQL 0,65 for visual inspection according to failure catalog ue Electrostatic Discharge Sensitive Device acco rding to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non -infringement, regarding circuits, descriptions and c harts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Te chnologies Representatives world -wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support device or system, or to a ffect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assum e that the health of the user or other persons may be endangered.