IGC100T65T8RM INFINEON | Alldatasheet

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Technical content

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7602M, Revision 1.2, 08.12.2014 IGBT3 Chip Medium Power Features:  650V Trench & Field Stop technology  high short circuit capability, self limiting short circuit current  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target

applications

Recommended for:  power modules G C E Applications:  drives Chip Type VCE ICn Die Size Package IGC100T65T8RM 650V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Parameters Die size 9.73 x 10.23 mm2 Emitter pad size (incl. gate pad) See chip drawing Gate pad size 1.615 x 0.817 Area total 99.5 Thickness 80 µm Wafer size 200 mm Max.possible chips per wafer 259 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag –system Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, <500µm Reject ink dot size  0.65mm ; max 1.2mm Storage environment for original and sealed MBB bags Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month for open MBB bags Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7602M, Revision 1.2, 08.12.2014 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter voltage, Tvj =25 C VCE 650 V DC collector current, limited by Tvj max IC 1 ) A Pulsed collector current, tp limited by Tvj max 2 ) Ic , p ul s 600 A Gate emitter voltage VGE 20 V Operating junction temperature Tvj -40 ... +175 °C Short circuit data 2 )3) VGE = 15V, VCC = 360V, Tvj = 150°C tSC 10 µs 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterization 3) allowed number of short circuits: <1000; time between short circuits: >1s. Static Characteristics (tested on wafer), Tvj =25 C Parameter Symbol Conditions Value Unit min. typ. max. Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC=4 mA 650 V Collector-Emitter saturation voltage VCEsat VGE=15V, IC=60A 0.89 1.06 1.23 Gate-Emitter threshold voltage VGE(th) IC=3.2mA , VGE=VCE 5.1 5.8 6.4 Zero gate voltage collector current ICES VCE=650V , VGE=0V 1.08 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 600 nA Integrated gate resistor rG 2  Electrical Characteristics (not subject to production test - verified by design / characterization) Parameter Symbol Conditions Value Unit min. typ. max. Collector-Emitter saturation voltage Tvj =25 C VCEsat VGE=15V, IC=200A 1.55 1.95 V Tvj =150 C 1.75 Input capacitance Ci e s VCE =25V, VGE =0V, f=1M Hz Tvj =25 C 12335 pF Reverse transfer capacitance Cr e s 366

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7602M, Revision 1.2, 08.12.2014 Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet FS200R07N3E4R Rev 2.0

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7602M, Revision 1.2, 08.12.2014 Chip Drawing E = Emitter G = Gate T = Test pad do not contact G E E E E E E E E T

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7602M, Revision 1.2, 08.12.2014

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883

Revision History

Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG

81726 Munich, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non -infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be ex pected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.