IGC019S06S1 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Enhancementmodepowertransistor-normallyOFFswitch
  • Noreverserecoverycharge
  • Reverseconductioncapability
  • Lowgatecharge,lowoutputcharge
  • QualifiedaccordingtoJEDECfortargetapplications Potentialapplications
  • TelecomDC/DC
  • Charger/Adapter
  • Batterypoweredtools
  • e-Mobility,UAVs Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.9 mΩ ID 100 A Qoss 32 nC QG 13 nC Qrr 0 nC Type/OrderingCode Package Marking RelatedLinks IGC019S06S1 PG-TSON-6 19SC1 -

CoolGaNTMTransistor 60 V G3 IGC019S06S1 Rev.0.1,2024-05-20 Target Data Sheet TableofContents

CoolGaNTMTransistor 60 V G3 IGC019S06S1 Rev.0.1,2024-05-20 Target Data Sheet 1Maximumratings Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain-source voltage VDS - - 60 V VGS=0V Pulsed drain-source voltage1) VDS,pulse - - 72 V VGS=0V,1htotaltime Continuous drain current ID 100

27 A VGS=5V,TC=25°C

VGS=5V,TA=25°C,RTHJA=38°C/W2) Pulsed drain current3) ID,pulse t.b.d. t.b.d. A Tj=25°C Tj=150°C Gate-source voltage VGS -6.5 5.5

6.5 V Continuous

3.3 W TC=25°C

TA=25°C,RTHJA=38°C/W Storage temperature Tstg -55 - 150 °C - Operating temperature Tj -40 - 150 °C - 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, top RthJC(top) - 0.5 0.6 °C/W - Thermal resistance, junction - case, bottom RthJC(bottom) - 1.9 2.8 °C/W - Device on 1 layer PCB RthJA - 60 70 °C/W 1s0p Device on 4 layer PCB RthJA - 38 - °C/W 2s2p with vias 1) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation 2) >Device on 4-layer FR4 PCB, vertical in still air. 3) >Pulse current limited by transfer characteristic. See diagram 6.

CoolGaNTMTransistor 60 V G3 IGC019S06S1 Rev.0.1,2024-05-20 Target Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate threshold voltage1) VGS(th) 1.2 2.0 2.9 V VDS=VGS,ID=14mA,measured within 10 ms after a pre-bias at VGS=5V,VDS=0Vforatleast5ms Drain-source leakage current IDSS 0.2 - µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS 0.01 130 µA VGS=5V,Tj=25°C VGS=-4V,Tj=25°C VGS=5V,Tj=125°C VGS=-4V,Tj=125°C Drain-source on-state resistance2) RDS(on) - 1.4 1.9 mΩ VGS=5V,ID=35A Gate resistance3) RG - 0.5 - Ω - Table5Dynamiccharacteristics3) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1200 - pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 640 - pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 19.0 - pF VGS=0V,VDS=30V,f=1MHz Table6Gatechargecharacteristics4) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - t.b.d. - nC VDD=30V,ID=35A,VGS=0to5V Gate charge at threshold Qg(th) - t.b.d. - nC VDD=30V,ID=35A,VGS=0to5V Gate to drain charge3) Qgd - 3.0 - nC VDD=30V,ID=35A,VGS=0to5V Switching charge Qsw - t.b.d. - nC VDD=30V,ID=35A,VGS=0to5V Gate charge total3) Qg - 13.0 - nC VDD=30V,ID=35A,VGS=0to5V Gate plateau voltage Vplateau - 2.6 - V VDD=30V,ID=35A,VGS=0to5V Output charge3) Qoss - 32 - nC VDD=30V,VGS=0V 1) When tested without the specified VGS pre-bias, VGS(th) will typically be 0.7 V lower than the threshold voltage measured under the specified conditions. 2) RDS(ON) is measured without prior drain bias or switching stress. An upcoming application note will provide detailed information aboutdynamicRDS(ON)andrecommendationsforinsitumeasurementintargetapplicationconditions. 3) Defined by design. Not subject to production test. 4) See ″Gate charge waveforms″ for parameter definition

CoolGaNTMTransistor 60 V G3 IGC019S06S1 Rev.0.1,2024-05-20 Target Data Sheet Table7Reverseoperation Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Reverse continuous current IS - - t.b.d. A TC=25°C Pulsed current, reverse IS,pulse - - t.b.d. A TC=25°C Source-Drain reverse voltage VSD - 2.4 3.4 V VGS=0V,IS,pulse=35A,Tj=25°C Reverse recovery charge1) Qrr - 0 - nC VR=30V,IS,pulse=35A, diS,pulse/dt=100A/µs 1) Defined by design. Not subject to production test.

CoolGaNTMTransistor 60 V G3 IGC019S06S1 Rev.0.1,2024-05-20 Target Data Sheet 4Electricalcharacteristicsdiagrams

CoolGaNTMTransistor 60 V G3 IGC019S06S1 Rev.0.1,2024-05-20 Target Data Sheet 5PackageOutlines PG-TSON-6-2 Z8B00184886 02.06.2020 Figure1OutlinePG-TSON-6,dimensionsinmm

CoolGaNTMTransistor 60 V G3 IGC019S06S1 Rev.0.1,2024-05-20 Target Data Sheet RevisionHistory IGC019S06S1 Revision:2024-05-20,Rev.0.1 Previous Revision Revision Date Subjects (major changes since last revision) 0.1 - Release of target version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2024InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.