IGB50N65H5 INFINEON | Alldatasheet
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Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 www.infineon.com 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration HighspeedIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering
- Best-in-Classefficiencyinhardswitchingandresonant topologies
- 650Vbreakdownvoltage
- LowQG
- Maximumjunctiontemperature175°C
- Pb-freeleadplating;RoHScompliant
- CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ PotentialApplications:
- EnergyGeneration -SolarStringInverter -SolarMicroInverter
- IndustrialPowerSupplies -IndustrialSMPS -IndustrialUPS
- MetalTreatment -Welding
- EnergyDistribution -EnergyStorage
- Infrastructure–Charge -Charger ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 G C E G E C KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IGB50N65H5 650V 50A 1.65V 175°C G50EH5 PG-TO263-3
Datasheet 2 V2.2 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration TableofContents
Datasheet 3 V2.2 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax Tc=25°Cvaluelimitedbybondwire Tc=100°C IC 80.0 53.7 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 150.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTc=25°C PowerdissipationTc=100°C Ptot 270.0 135.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.55 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 65 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.65 1.85 1.95 2.10 V Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C 2000 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S
Datasheet 4 V2.2 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 3000 - Output capacitance Coes - 50 - Reverse transfer capacitance Cres - 11 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=520V,IC=50.0A, VGE=15V - 120.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 23 - ns Rise time tr - 31 - ns Turn-off delay time td(off) - 173 - ns Fall time tf - 40 - ns Turn-on energy Eon - 1.59 - mJ Turn-off energy Eoff - 0.75 - mJ Total switching energy Ets - 2.34 - mJ Tvj=25°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 21 - ns Rise time tr - 15 - ns Turn-off delay time td(off) - 180 - ns Fall time tf - 18 - ns Turn-on energy Eon - 0.52 - mJ Turn-off energy Eoff - 0.18 - mJ Total switching energy Ets - 0.70 - mJ Tvj=25°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.
Datasheet 5 V2.2 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 23 - ns Rise time tr - 29 - ns Turn-off delay time td(off) - 190 - ns Fall time tf - 33 - ns Turn-on energy Eon - 1.95 - mJ Turn-off energy Eoff - 0.73 - mJ Total switching energy Ets - 2.68 - mJ Tvj=150°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 20 - ns Rise time tr - 15 - ns Turn-off delay time td(off) - 205 - ns Fall time tf - 26 - ns Turn-on energy Eon - 0.75 - mJ Turn-off energy Eoff - 0.27 - mJ Total switching energy Ets - 1.02 - mJ Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω ,RG(off)=12.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.
Figure 17. IGBTtransientthermalimpedance
Datasheet 11 V2.2 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration 30-08-2007 Z8B00003324 0.039 0.000 0.026 0.335 0.013 0.037 MIN 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 0.00 0.65 0.33 8.51 0.95 4.30 MIN 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 MAX 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 MAX 0.055 7.5mm
Datasheet 12 V2.2 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions
Datasheet 13 V2.2 2018-01-11 IGB50N65H5 Highspeedswitchingseriesfifthgeneration RevisionHistory IGB50N65H5 Revision:2018-01-11,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-05-19 Final data sheet 2.2 2018-01-11 Remove of Pb-free symbol and editorial changes.
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