IFN860 NJSEMI | Alldatasheet
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u , Li ne. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IFN860 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 400 mW Power Derating 2.3 rnWfC Storage Temperature Range - 65°C to 200"C At 25CC free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Leakage Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Differential Gate Source Voltage V(BR)GSS IGSS VGS(OFF) 'DSS IVGS1~ VGS2 IFN860 Mm -20 -0.3 Typ Max Process NJ450L Unit V nA V mA mV Test Conditions IG = - 1 uA, VDS = 0v VGS = -10V, VDS = 0V VDS = 10V, lD = 100uA VDS = 10V, VGS = 0V VDS = 10V, !D=100uA Dynamic Electrical Characteristics Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Hss Crss GN mS PF PF nV/\\Hz VDS = 10V, lD = -10mA VDS = 10V, ID = - 10 mA VDS = 10V, iD = -10mA VDG-3V, ID = 10mA f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz TO71 SEATING PLANE OJ6jQ, .019 < (DIM A) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors