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Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.2 GaN Power Transistors Product Features Applications

  • 3400~3600MHz • WiMAX, LTE, WCDMA, GSM
  • 85W Saturated Power @ 48V • Multi-Band, Multi-Mode
  • 68% Drain Efficiency @ Psat • Multi-Carrier
  • 35% Drain Efficiency @ 42.8dBm • High Efficiency, Doherty Amplifier IE36085W RF12002KR3 Typical Single-Carrier LTE Performance (VDS= +48V, TC=25℃, 50Ω) Note *1 Measured in the IE36085W test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF. Absolute Maximum Ratings Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF. *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics 2.90 *1 Note *1 Measured for the IE36085W at dissipation power of 48.3W. IGMAX PDISS TSTG TC TJ RθJC ℃/W Tc=85℃ 225 Maximum Drain Current*1 IDMAX 4.5 A Tc=25℃ Soldering Temperature*3 TS 245 ℃ Thermal Resistance, Junction to Case -40, +150 Value Unit V V VDC mA W 150 -10, +2 -65, +150 Rating Symbol Rating Symbol Value Drain Efficiency [%] 35.9 IE36085W Frequency [MHz] Average Power*1Peak Power 86.3 Power [W] 68.4 Drain Efficiency [%] Power [W] 16.6 Gain [dB] ACLR [dBc] -29.53555.0 Tc=85℃ Tc=25℃ Tc=25℃ 30 seconds Tc=25℃ Drain to Source Voltage Gate to Source Voltage Operating Voltage Maximum Forward Gate Current Power Dissipation Storage Temperature Case Operating Temperature Operating Junction Temperature*2 VDSS VGS VDD Condition Unit Condition

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.2 GaN Power Transistors IE36085W Electrical Characteristics (TC=25℃ unless otherwise noted) VDS = ID = VDS = ID = VDS = VGS = VGS = ID = VGS = VDS = VGS = VDS = VDS = IDQ = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data. *3 Pulse width 100μsec, Duty Cycle 10%. *4 Measured in the IE36085W test board amplifier circuit, under LTE 10MHz, PAR7.5dB @0.01% probability on CCDF. *5 Measured in the IE36085W test board amplifier circuit. No damage at all phase angles. *6 Psat is defined as ΔPout/ΔPin<0.1, where ΔPin is increased input power, ΔPout is increased output power. mA 120V Gate Leakage Current -8V IGLKG -2.4 - - mA 120V - Drain Leakage Current VDC V 10.8mA Drain-Source Breakdown Voltage -8V VBR VDC 350mA Saturated Drain Current*2 6V IDS A Gate Quiescent Voltage 48V VGS(Q) 150 Unit Gate Threshold Voltage 10V VGS(TH) 10.8mA Characteristics Conditions Symbol Min -3.8 -3.0 -2.3 RF Characteristics (Fc=3480MHz unless otherwise noted) Saturated Output Power*3,6 48V PSAT Output Mismatch Stress*3, 5 48V 9.0 350mA - - W 350mA 42.8dBm 32.0 35.0 - % -8V IDLKG VSWR - - 10:1 ψ350mA PSAT Pulsed Modulated Drain Efficiency*4 48V η -2.6 10.8 - % 16.5 - DC Characteristics*1 Typ Max dB -26.0 dBc350mA 42.8dBm -24.0 LTE Linearity 48V ACLR 350mA PSAT Pulsed Modulated Gain*4 48V GBR Pulsed Drain Efficiency*3 48V η 350mA 42.8dBm 64.0 15.5 68.0 85.0 4.3-

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.2 GaN Power Transistors IE36085W Typical Pulsed Signal Performance (Tc=25℃, Measured in the IE36085W test board amplifier circuit) VDS = 48V, IDQ = 350mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the IE36085W test board amplifier circuit) PAVG = 42.8dBm, VDS = 48V, IDQ = 350mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Peak Power Drain Effiiciency 100 3300 3350 3400 3450 3500 3550 3600 3650 Drain Efficiency [%] Peak Power [dBm] Frequency [MHz] Peak Power, Drain Efficiency vs. Frequency Power Gain Drain Efficiency 28 30 32 34 36 38 40 42 44 46 48 50 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Pulsed Power Gain, Drain Efficiency vs. Output Power Power Gain 3400MHz Power Gain 3480MHz Power Gain 3560MHz Drain Efficiency 3400MHz Drain Efficiency 3480MHz Drain Efficiency 3560MHz Power Gain Drain Effiiciency ACLR PARC -40 -35 -30 -25 -20 -15 -10 3300 3350 3400 3450 3500 3550 3600 3650 ACLR [dBc], PARC [dB] Power Gain [dB], Drain Efficiency [%] Frequency [MHz] LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain Drain Effiiciency ACLR-L ACLR-U PARC Power Gain Drain Efficiency 28 30 32 34 36 38 40 42 44 46 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Power Gain, Drain Efficiency vs. Output Power Power Gain 3405MHz Power Gain 3480MHz Power Gain 3555MHz Drain Efficiency 3405MHz Drain Efficiency 3480MHz Drain Efficiency 3555MHz PARC ACLR -45 -40 -35 -30 -25 -20 -15 28 30 32 34 36 38 40 42 44 46 ACLR-L [dBc], ACLR-U [dBc] PARC[dB] Output Power [dBm] PARC, ACLR vs. Output Power PARC 3405MHz PARC 3480MHz PARC 3555MHz ACLR-L 3405MHz ACLR-L 3480MHz ACLR-L 3555MHz ACLR-U 3405MHz ACLR-U 3480MHz ACLR-U 3555MHz

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.2 GaN Power Transistors IE36085W Typical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the IE36085W test board amplifier circuit) 2-tone Power = 47.3dBm, VDS = 48V, IDQ = 350mA Typical Small Signal Performance (Tc=25℃, Measured in the IE36085W test board amplifier circuit) PIN = 0dBm, VDS = 48V, IDQ = 350mA -50 -45 -40 -35 -30 -25 -20 -15 1 10 100 Intermodulation [dBc] Tone Spacing [MHz] Intermodulation vs. Tone Spacing IM3-L IM5-L IM3-U IM5-U Small Signal Gain IRL -25 -20 -15 -10 -10 2700 2900 3100 3300 3500 3700 3900 4100 Return Loss [dB] Small Signal Gain [dB] Frequency [MHz] Small Signal Gain, Input Return Loss vs. Frequency 0 1000 2000 3000 4000 5000 6000 7000 μ' Factor μ F actor Frequency [MHz] μ Factor vs. Frequency

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.2 GaN Power Transistors IE36085W Test Board Component Layout C9 5.6pF High Q Capacitor 201CHA5R6CSLE TEMEX C6 100pF Chip Capacitor C8,C11,C14 - - - SAMYOUNG TR 85W GaN Transistor IE36085W RFHIC

Description

4.7uF Tantalum Capacitor TAJA475K025RNJ AVX 3.9pF High Q Capacitor 201CHA3R9CSLE TEMEX 3.9pF High Q Capacitor GRM188R71H103KA01D MURATA 1nF Chip Capacitor GRM188R71H102KA01D MURATA 10nF Chip Capacitor 501CHB101JSLE TEMEX 10uF MLCC RS80R2A106M MARUWA C16 33uF Aluminum Capacitor BDS100VC33MJ10TP C13 100pF High Q Capacitor C10 5.6pF High Q Capacitor EMI1 CTH32R102S20A-TM MARUWA CON1 DC Connector 5045-10 MOLEX GRM1885C1H101JA01D MURATA C7 10pF Chip Capacitor GRM1885C1H100JA01D MURATA C17~C22 - 501CHB5R6CSLE TEMEX C12 39pF High Q Capacitor 501CHB390JSLE TEMEX - - C15 EMI FILTER

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.2 GaN Power Transistors IE36085W Pin No - - - R1 (Radius) .016 .020 .024 0.40 7.23 .618 14.70 15.20 15.70 9.75 9.90 INCH MILLIMETER MIN TYP MAX .380 .405 9.75 9.90 .380 Function Gate Drain Source Pin Description Dim. A1 9.65 MAX MIN TYP .384 .390 9.65 .390 0.13 0.18 ⓑ- Lead Frame .138 3.00 3.20 - .001 - - 1.73 ⓐ- Lid 0.03 .004 .005 .007 0.10 2.00 2.10 .395 .400 10.03 10.29 - - L2 - - - .118 .126 10.16 ⓒ- Flange .075 .079 .083 1.90 .579 .598 10.29 0.50 0.60 - - - - - - .384 C1 (Chamfer) - - - 3.50

Korean Facility : 82-31-8069-3000 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.2 GaN Power Transistors IE36085W

Revision History

March, 2016IE36085W Version 1.0 1.1 1.2 June, 2015 Part Number Data Sheet StatusDescription Initial Release of Data sheet Modified Test Fixture Modified Electrical Characteristics Release Date IE36085W IE36085W May, 2015 RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1-919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034.