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Technical content

Product Features Applications

  • 2496~2690MHz • WiMAX, LTE, WCDMA, GSM
  • 85W Saturated Power @ 48V • Multi-Band, Multi-Mode
  • 70% Drain Efficiency @ Psat • Multi-Carrier
  • 41% Drain Efficiency @ 42.8dBm • High Efficiency, Doherty Amplifier IE26085P NS-AS01 Typical Single-Carrier LTE Performance (VDS= +48V, TC=25℃, 50Ω) Note *1 Measured in the IE26085P test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF. Absolute Maximum Ratings Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF. *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics 2.97 *1 Note *1 Measured for the IE26085P at dissipation power of 47W. Tc=85℃ IGMAX PDISS TSTG TC TJ 225 Maximum Drain Current*1 IDMAX 4.5 A Tc=25℃ Soldering Temperature*3 TS 245 ℃ Thermal Resistance, Junction to Case RθJC -40, +150 Value Unit V V VDC mA W 150 -10, +2 -65, +150 Rating Symbol Rating Symbol Value ℃/W Drain Efficiency [%] 40.7 IE26085P Frequency [MHz] Average Power*1Peak Power 91.2 Power [W] 68.3 Drain Efficiency [%] Power [W] 19.1 Gain [dB] ACLR [dBc] -27.12685.0 VDSS VGS VDD Tc=85℃ Tc=25℃ Tc=25℃ 30 seconds Tc=25℃ Drain to Source Voltage Gate to Source Voltage Operating Voltage Maximum Forward Gate Current Power Dissipation Storage Temperature Case Operating Temperature Operating Junction Temperature*2 Condition Unit Condition Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 0.1

GaN Power Transistors IE26085P Electrical Characteristics (TC=25℃ unless otherwise noted) VDS = ID = VDS = ID = VDS = VGS = VGS = ID = VGS = VDS = VGS = VDS = VDS = IDQ = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data. *3 Pulse width 100μsec, Duty Cycle 10%. *4 Measured in the IE26085P test board amplifier circuit, under LTE 10MHz, PAR7.5dB @0.01% probability on CCDF. *5 Measured in the IE26085P test board amplifier circuit. No damage at all phase angles. *6 Psat is defined as ΔPout/ΔPin<0.1, where ΔPin is increased input power, ΔPout is increased output power. mA 120V Gate Leakage Current -8V IGLKG -2.4 - - mA 120V - Drain Leakage Current VDC V 10.8mA Drain-Source Breakdown Voltage -8V VBR VDC 300mA Saturated Drain Current*2 6V IDS A Gate Quiescent Voltage 48V VGS(Q) 150 Unit Gate Threshold Voltage 10V VGS(TH) 10.8mA Characteristics Conditions Symbol Min -3.8 -3.0 -2.3 9.0 RF Characteristics (Fc=2593MHz unless otherwise noted) Saturated Output Power*3,6 48V PSAT Output Mismatch Stress*3, 5 48V 300mA - - W 300mA 42.8dBm 39.0 41.0 - % -8V IDLKG VSWR - - 10:1 ψ300mA PSAT Pulsed Modulated Drain Efficiency*4 48V η - % 19.5 -2.6 10.8 42.8dBm 18.5 4.3- DC Characteristics*1 Typ Max dB -26.0 dBc300mA 42.8dBm -24.0 LTE Linearity*4 48V ACLR 300mA PSAT Pulsed Modulated Gain*4 48V GBR Pulsed Drain Efficiency*3 48V η 300mA Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 0.1

GaN Power Transistors IE26085P Typical Pulsed Signal Performance (Tc=25℃, Measured in the IE26085P test board amplifier circuit) VDS = 48V, IDQ = 300mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the IE26085P test board amplifier circuit) PAVG = 42.8dBm, VDS = 48V, IDQ = 300mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Peak Power Drain Effiiciency 100 2450 2500 2550 2600 2650 2700 2750 Drain Efficiency [%] Peak Power [dBm] Frequency [MHz] Peak Power, Drain Efficiency vs. Frequency Power Gain Drain Efficiency 27 29 31 33 35 37 39 41 43 45 47 49 51 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Pulsed Power Gain, Drain Efficiency vs. Output Power Power Gain 2505MHz Power Gain 2595MHz Power Gain 2685MHz Drain Efficiency 2505MHz Drain Efficiency 2595MHz Drain Efficiency 2685MHz Power Gain Drain Effiiciency ACLR PARC -35 -30 -25 -20 -15 -10 2450 2500 2550 2600 2650 2700 2750 ACLR [dBc], PARC [dB] Power Gain [dB], Drain Efficiency [%] Frequency [MHz] LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain Drain Effiiciency ACLR-L ACLR-U PARC Power Gain Drain Efficiency 28 30 32 34 36 38 40 42 44 46 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Power Gain, Drain Efficiency vs. Output Power Power Gain 2505MHz Power Gain 2595MHz Power Gain 2685MHz Drain Efficiency 2505MHz Drain Efficiency 2595MHz Drain Efficiency 2685MHz PARC ACLR -45 -40 -35 -30 -25 -20 -15 -10 28 30 32 34 36 38 40 42 44 46 ACLR-L [dBc], ACLR-U [dBc] PARC[dB] Output Power [dBm] PARC, ACLR vs. Output Power PARC 2505MHz PARC 2595MHz PARC 2685MHz ACLR-L 2505MHz ACLR-L 2595MHz ACLR-L 2685MHz ACLR-U 2505MHz ACLR-U 2595MHz ACLR-U 2685MHz Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 0.1

GaN Power Transistors IE26085P Typical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the IE26085P test board amplifier circuit) 2-tone Power = 47.3dBm, VDS = 48V, IDQ = 300mA Typical Small Signal Performance (Tc=25℃, Measured in the IE26085P test board amplifier circuit) PIN = 0dBm, VDS = 48V, IDQ = 300mA -35 -30 -25 -20 -15 -10 1 10 100 Intermodulation [dBc] Tone Spacing [MHz] Intermodulation vs. Tone Spacing IM3-L IM5-L IM3-U IM5-U Small Signal Gain IRL -25 -20 -15 -10 2200 2300 2400 2500 2600 2700 2800 2900 3000 Return Loss [dB] Small Signal Gain [dB] Frequency [MHz] Small Signal Gain, Input Return Loss vs. Frequency 0 500 1000 1500 2000 2500 3000 3500 4000 μ' Factor μ Factor Frequency [MHz] μ Factor vs. Frequency Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 0.1

GaN Power Transistors IE26085P Test Board Component Layout ROGERS CORP.RO4350B (70X110mm) ANYKCN8043110070 LW0640-10 HANLIM ANYSMA-4Hole UQCB7A100JATME ROHM ROHM MURATA 10pF High Q Capacitor 201CHA100JSLE TEMEX 10pF High Q Capacitor GRM1885C1H101JA01D 100 ohm Chip Resistor 10 ohm Chip Resistor 33uF Aluminum Capacitor Polymer Capacitor C1,C2 1000pF EMI Filter RF ConnectorCON3 DC Connector Manufacturer MCR10 EZHJ100 MARUWA CTH32R102S20A MARUWA TEMEX TEMEX SAMYOUNG AVX 501CHB100JSLE 501CHB101JSLE MURATA MURATA GRM188R71H104KA93D GRM188R71H105KA12D BDS100VC33MJ10TP Part Description Part Number C12, C13 22uF MLCC RS80R2A226M AVX MURATA 1nF Chip Capacitor GRM188R71H102KA01D TCJB476M010R0070 100pF Chip Capacitor 100nF Chip Capacitor 1uF High Q Capacitor MCR03 EZHJ101R1 Nothing C8, C23 0.5pF High Q Capacitor 201CHA0R5JSLE TEMEX RFHICIE27330P C16~C21, L1 C15 RF Connector TR GaN Transistor CON2 CON1 C14 C9, C10 C11 10pF High Q Capacitor 100pF High Q Capacitor EMI1 Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 0.1

GaN Power Transistors IE26085P Pin No - - - R1 (Radius) .016 .020 .024 0.40 7.23 .380 MIN TYP MAX 9.75 9.90 .380 .618 14.7 15.2 15.7 9.75 9.90 INCH MILLIMETER .405 Function Gate Drain Source Pin Description Dim. A1 9.65 MAX MIN TYP .384 .390 0.13 0.18 ⓑ- Lead Frame .167 3.75 4.05 - .001 - - 2.28 ⓐ- Lid 0.03 .004 .005 .007 0.10 2.00 2.10 .395 .400 10.03 L2 - - - .148 .159 10.16 ⓒ- Flange .075 .079 .083 1.90 .085 .090 .384 2.03 2.15 .390 9.65 10.29 0.50 0.60 .064 1.37 1.50 1.63 10.29 .054 .059 4.25 C1 (Chamfer) - - .080 .579 .598 Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 0.1

GaN Power Transistors IE26085P

Revision History

0.2 PreliminaryModified Thermal CharacteristicsOctober, 2018IE26085P

0.1December, 2015 Part Number Data Sheet Status IE26085P Preliminary

Description

Initial Release of Data sheet Release Date Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 0.1 RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1-919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034.