DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

GaN Power Transistors IE24150P Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 8 Version 1.0 Product Features Applications

  • 2400 ~ 2500MHz (ISM band)
  • 170 W CW Psat @ 50V
  • 72% Drain Efficiency @ 50V
  • Excellent Ruggedness
  • Excellent Thermal Stability
  • Internally Matched
  • Industrial Heating and Drying
  • S cientific
  • Medical : Skin Treatment, Blood Therapy
  • Plasma Lighting

Description

The 150W CW RF Power Transistor is designed for Industrial, Scientific, Medical (ISM) and Plasma Lighting applications at 2450MHz. This device is suitable for use in CW, pulse and linear applications. This high efficiency rugged device is targeted to replace Industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, plasma lighting and medical systems. Typical CW Peak Power Performance ( VDS=+50V , Tc=25°C, 50Ω) Frequency [MHz] Signal Type Pin [W] Power Gain [dB] Drain Efficiency [%] Pout [W] 2400.0 CW 7.7 13.8 73.3 186.7 Absolute Maximum Ratings Rating Symbol Value Unit Condition D rain to Source Voltage VDSS 150 V Tc=25℃ G ate to Source Voltage VGS -10, +2 V Tc=25℃ O perating Voltage VDD 52 VDC - M aximum Forward Gate Current IGMAX 24 mA Tc=25℃ Maximum Drain Current*1 IDMAX 9 A Tc=25℃ P ower Dissipation PDISS 90.5 W Tc=85℃ S torage Temperature TSTG -65, +150 ℃ - C ase Operating Temperature TC -40, +150 ℃ - O perating Junction Temperature *2 TJ 225 ℃ - S oldering Temperature *3 TS 245 ℃ - Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF. *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics Rating Symbol Value Unit Condition T hermal Resistance, Junction to Case RθJC 1.54 *1 ℃/W Tc=85℃ Note *1 Measured for the IE24150P at dissipation power is 90.5W

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 8 Version 1.0 Electrical Characteristics (Tc=25℃ unless otherwise noted) Characteristics Conditions Symbol Min Typ Max Unit DC Characteristics*1 Gate Threshold Voltage V DS = 10V VGS(TH) -3.8 -3.0 -2.3 VDC ID = 21.6mA Gate Quiescent Voltage V DS = 50V VGS(Q) - -3.2 - VDC ID = 50mA Saturated Drain Current*2 V DS = 6V IDS 18.0 21.6 - A V GS = 2V Drain-Source Breakdown Voltage V GS = -8V VBR 150 - - V ID = 21.6mA Gate Leakage Current V GS = -8V IGLKG -4.8 - - mA V DS = 120V Drain Leakage Current V GS = -8V IDLKG - - 8.6 mA V DS = 120V RF Characteristics (Fc = 2450MHz unless otherwise noted) Saturated Output Power*3 V DS = 50V PSAT 150 170 - W IDQ = 50mA CW Drain Efficiency*3 V DS = 50V η 69 73 - % IDQ = 50mA POUT = PSAT CW Output Mismatch Stress*4, 5 V DS = 50V VSWR - - 10:1 ψ IDQ = 50mA POUT = PSAT Pulsed Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data. *3 CW(Continuous Wave) signal operation condition. *4 Pulse width 100usec, Duty Cycle 10%. *5 Measured in the IE24150P-2450MHz test board amplifier circuit, No damage at all phase angles.

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 8 Version 1.0 Typical CW Performance Charts * Bias condition ( IDQ=50mA @ VDS=50V, Tc=25℃) Peak Power, Drain Efficiency vs. Frequency Power Gain, Drain Efficiency vs. Frequency

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 8 Version 1.0 Power Gain, Drain Efficiency vs. Output Power Application Circuit

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 8 Version 1.0 Part List Part Description Part Number Manufacturer R1 10 Ohm Chip Resistor, 2012 MCR10EZHJ100 ROHM R2 10 Ohm Chip Resistor, 1608 MCR03EZPJ100 ROHM C1 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG C2 10pF High Q Capacitor 501CHB100JSLE TEMEX C3 100pF High Q Capacitor 501CHB101JSLE TEMEX C4 10uF, 16V MLCC C3216X7R1C106K TDK C5 100nF Chip Capacitor GRM188R71H104KA93D MURATA C6 1nF Chip Capacitor GRM188R71H102KA01D MURATA C7 100pF Chip Capacitor GRM1885C1H101JA01D MURATA C8 10pF Chip Capacitor GRM1885C1H100JA01D MURATA C9 10uF, 100V MLCC RS80R2A106M MARUWA C10, C15, C16, C17 0.5pF High Q Capacitor 501CHB0R5BSLE TEMEX C11 3pF High Q Capacitor 201CHA3R0CSLE TEMEX C12, C14 0.7pF High Q Capacitor 201CHA0R7BSLE TEMEX C13 10pF High Q Capacitor 201CHA100JSLE TEMEX EMI1 EMI FILTER CTH32R102S20A-TM MARUWA CON1 DC Connector 22-04-1101 MOLEX TR1 150W GaN Transistor IE24150P RFHIC

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 8 Version 1.0 * Unit: mm[inch] | Tolerance ±0.15 [.006] Pin Description Dim. INCH MILLIMETER Pin No Function MIN TYP MAX MIN TYP MAX L1 - - - - - - L2 - - - - - -

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 8 Version 1.0 Sealing Epoxy Tolerance (Type : NS-DS01) Note Unit : mm F is maximum size of flange

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 8 / 8 Version 1.0

Revision History

Part Number Release Date Version Description Data Sheet Status IE24150P April, 2017 0.1 Initial Release of DataSheet Preliminary IE24150P October, 2017 1.0 Revision : Update Test Data Final RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036.