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GaN Power Transistors IE23195WD GaN Power Transistors IE23195WD Product Features Applications

  • 2300~2400MHz • WiMAX, LTE, WCDMA, GSM
  • 240W Saturated Power @ 48V • Multi Band Multi Mode
  • 240W Saturated Power @ 48V •Multi-Band, Multi-Mode
  • 55% Drain Efficiency @ 46dBm • Multi-Carrier
  • Internally Matched • High Efficiency Doherty Amplifier
  • Internally Matched •High Efficiency, Doherty Amplifier
  • Asymmetrical Doherty GaN HEMT IE23195W RF12001DKR3 Path A Typical Single-Carrier LTE Performance (VDS= +48V, TC=25℃, 50Ω) Path Byp g C ) Frequency [MHz] Average Power*1Peak Power Drain Efficiency [%] Frequency [MHz] 2305 0 40 15 0 56 5 -23 9 Power [W] Gain [dB] ACLR [dBc]Power [W] 252 22305.0 40 15.0 56.5 -23.9 2350.0 40 15.3 55.8 -25.6 252.2 242.1 Note N *1 Measured in the IE23195WD Doherty test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF. Absolute Maximum RatingsAbsolute Maximum Ratings Rating Symbol ConditionValue Unit Drain to Source Voltage Gate to Source Voltage VDSS V V Tc=25℃ Tc=25℃V 150 10 +2 Gate to Source Voltage Operating Voltage VGS VDD Tc=25℃V-10, +2 VDC52 Storage Temperature Case Operating Temperature 40 +150 -65, +150 30 seconds TSTG T Case Operating Temperature Operating Junction Temperature*1 -40, +150 ℃ ℃225 30 secondsTC TJ Note Soldering Temperature*2 TS 245 ℃ Note *1 Continuous use at maximum temperature will affect MTTF. The recommended maximum TJ is 225℃. *2 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device"e e o e pp c o o e( 00 ) o so de g So de Co d o o C s G ev ce Thermal Characteristics 2.70 *1 Rating Symbol Value Unit Condition Thermal Resistance, Junction to Case RθJC ℃/W Tc=85℃ Note *1 Measured for the IE23195WD at dissipation power of 52W. This is the maximum value. 1 Measured for the IE23195WD at dissipation power of 52W. This is the maximum value. Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 3 All specifications may change without notice Version 0.1

GaN Power Transistors IE23195WD GaN Power Transistors IE23195WD Pin Description INCH MILLIMETER Pin No MAX MIN TYP 97 6Ph A G MAX p Dim. A1 384 389 96 3 Function 98 9379 MIN TYP A2Path B Gate 9.76Path A Gate 9.89 A1 .384 .389 9.63 9.76 9.89 .379 .384 .389 9.63 .3791 Path A Drain 115 26 5Path B Drain B0 .253 6.69 104 109 29 1 .258 .263 6.43 6.56 27 8 4 B1 B2 15.40 .115 2.65Path B Drain .104 .109 2.912.784 B4ⓐ- Lid .057 .062 .067 1.44 .005 .007 0.08 0.18 1.57 1.70 0.13.003 B4ⓐ Lid .057 .062 ⓑ- Lead Frame C1 (Chamfer) .067 1.44 .035 1.57 1.70 ⓒ- Ceramic Ring .405 10.03 10.16F1 10.29 .395 .400 .395 --F3 001 00 3F4 ---- -. 001 -- 0.03 -F4 K1 --- --- -K2 - - - - - - K2 - - - - - Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 3 All specifications may change without notice Version 0.1

GaN Power Transistors IE23195WD GaN Power Transistors IE23195WD Revision Historyy VersionPart Number Data Sheet StatusDescriptionRelease Date 0.1February, 2017IE23195WD PreliminaryInitial Release of DataSheet Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 3 All specifications may change without notice Version 0.1 RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1-919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034.