DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors Product Features Applications

  • 2110~2170MHz • WiMAX, LTE, WCDMA, GSM
  • 56W Saturated Power @ 48V • Multi-Band, Multi-Mode
  • 54% Drain Efficiency @ 40dBm • Multi-Carrier
  • Internally Matched • High Efficiency, Doherty Amplifier
  • Symmetrical Doherty GaN HEMT IE21056W RF12001DKR3 Typical Single-Carrier LTE Performance (VDS= +48V, TC=25℃, 50Ω) Note *1 Measured in the IE21056WD Doherty test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF. Absolute Maximum Ratings Note *1 Continuous use at maximum temperature will affect MTTF. *2 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics 7.45 *1 Note *1 Measured for the IE21056WD at dissipation power of 18.8W. Thermal Resistance, Junction to Case RθJC ℃/W Tc=85℃ 225 -65, +150 30 seconds TSTG TC TJ IE21056WD Frequency [MHz] Average Power*1Peak Power 2115.0 10 17.2 54.8 -24.9 2140.0 10 17.2 54.8 -25.3 Power [W] 17.7 Gain [dB] ACLR [dBc] -24.32165.0 Power [W] 67.3 61.7 60.3 Drain Efficiency [%] 56.3 V 150 -10, +2 V DC Rating Drain to Source Voltage Gate to Source Voltage Operating Voltage Storage Temperature Case Operating Temperature Operating Junction Temperature*1 Symbol VDSS VGS VDD Rating Symbol Value -40, +150 Condition Unit Condition Soldering Temperature*2 TS 245 Value Unit V Tc=25℃ Tc=25℃ Path A Path B

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE21056WD Electrical Characteristics (TC=25℃ unless otherwise noted) Tc= 25℃ Tc= 25℃ Tc= 85℃ VDS = ID = VDS = ID = VGS = ID = VDS = VGS = VGS = VDS = VGS = VDS = Tc= 25℃ Tc= 25℃ Tc= 85℃ VDS = ID = VDS = ID = VGS = ID = VDS = VGS = VGS = VDS = VGS = VDS = Note *1 Measured on wafer prior to packaging. *2 Current Limit for long term, reliable operation. *3 Scaled from PCM data. PDMAX - - 18.8 W Maximum Forward Gate Current IGMAX - - 4.0 mA Gate Quiescent Voltage 18.8 W 3.5 10V VGS(TH) Maximum Drain Current*2 IDMAX 100mA Saturated Drain Current*3 6V IDS A Gate Leakage Current -8V IGLKG -0.8 - - mA DC Characteristics - Path B (Peaking)*1 Gate Threshold Voltage -8V IDLKG - - 1.4 - - V mA 120V 2.9 Unit IDLKG -3.8 -3.0 -2.3 VDC 3.6mA Gate Quiescent Voltage 48V VGS(Q) - -2.7 - Drain Leakage Current Saturated Drain Current*3 6V IDS 2.9 mA VDC VBR 150 mA 120V IGMAX - 120V A Gate Threshold Voltage DC Characteristics - Path A (Carrier)*1 -3.8 VVBR VDC- 10V VGS(TH) VDC 3.6mA Maximum Drain Current*2 IDMAX - - 1.5 Power Dissipation - 1.5 A Conditions Symbol Min 48V VGS(Q) 150 Typ Max PDMAX -2.3-3.0 Characteristics Maximum Forward Gate Current - 4.0 mA Drain-Source Breakdown Voltage -8V 3.6mA - A IGLKG -0.8 -2.7 3.5 Gate Leakage Current -8V 1.4- - - 3.6mA D rain-Source Breakdown Voltage -8V Drain Leakage Current -8V Power Dissipation - - 120V 100mA

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE21056WD VDS = IDQ = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = Note *1 Pulse width 100μsec, Duty Cycle 10%. *2 Measured in the IE21056WD Doherty test board amplifier circuit, under LTE 10MHz, PAR7.5dB @0.01% probability on CCDF. *3 Measured in the IE21056WD Doherty test board amplifier circuit. No damage at all phase angles. *4 Psat is defined as ΔPout/ΔPin<0.1, where ΔPin is increased input power, ΔPout is increased output power. Typ Max Unit 48V PSAT 100mA PSAT Pulsed Characteristics Conditions Symbol Min Saturated Output Power*1,4 LTE Linearity*2 48V ACLR Modulated Gain*2 100mA - - 10:1 40dBm 50.0 54.0 - % Modulated Drain Efficiency*2 48V η 17.0 - dB -24.0 dBc ψ 100mA 48V GBR100mA 40dBm 16.0 56.0 RF Characteristics (Fc=2140MHz unless otherwise noted) - W 100mA 40dBm -21.0 Output Mismatch Stress *1, 3 48V VSWR

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE21056WD Typical Pulsed Signal Performance (Tc=25℃, Measured in the IE21056WD test board amplifier circuit) VDS = 48V, IDQ(C) = 100mA, VGS(P)=-4.4V, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the IE21056WD test board amplifier circuit) PAVG = 40dBm, VDS = 48V, IDQ(C) = 100mA, VGS(P) = -4.4V LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Peak Power 1990 2020 2050 2080 2110 2140 2170 2200 2230 2260 2290 Peak Power [dBm] Frequency [MHz] Peak Power vs. Frequency Power Gain 25 27 29 31 33 35 37 39 41 43 45 47 49 Power Gain [dB] Output Power [dBm] Pulsed Power Gain vs. Output Power Power Gain 2110MHz Power Gain 2140MHz Power Gain 2170MHz Power Gain Drain Effiiciency ACLR PARC -50 -45 -40 -35 -30 -25 -20 -15 -10 2015 2040 2065 2090 2115 2140 2165 2190 2215 2240 2265 ACLR [dBc], PARC [dB] Power Gain [dB], Drain Efficiency [%] Frequency [MHz] LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain Drain Effiiciency ACLR-L ACLR-U PARC Power Gain Drain Efficiency 25 27 29 31 33 35 37 39 41 43 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Power Gain, Drain Efficiency vs. Output Power Power Gain 2115MHz Power Gain 2140MHz Power Gain 2165MHz Drain Efficiency 2115MHz Drain Efficiency 2140MHz Drain Efficiency 2165MHz PARC ACLR -45 -40 -35 -30 -25 -20 -15 25 27 29 31 33 35 37 39 41 43 ACLR-L [dBc], ACLR-U [dBc] PARC[dB] Output Power [dBm] PARC, ACLR vs. Output Power PARC 2115MHz PARC 2140MHz PARC 2165MHz ACLR-L 2115MHz ACLR-L 2140MHz ACLR-L 2165MHz ACLR-U 2115MHz ACLR-U 2140MHz ACLR-U 2165MHz

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE21056WD Typical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the IE21056WD Doherty test board amplifier circuit) 2-tone Power = 40dBm, VDS = 48V, IDQ(C) = 100mA, VGS(P) = -4.4V Typical Small Signal Performance (Tc=25℃, Measured in the IE21056WD Doherty test board amplifier circuit) PIN = 0dBm, VDS = 48V, IDQ = 100mA, VGS(P) = -4.4V -30 -28 -26 -24 -22 -20 -18 -16 1 10 100 Intermodulation [dBc] Tone Spacing [MHz] Intermodulation vs. Tone Spacing IM3-L IM5-L IM3-U IM5-U Small Signal Gain IRL -25 -20 -15 -10 -10 1800 1900 2000 2100 2200 2300 2400 2500 Return Loss [dB] Small Signal Gain [dB] Frequency [MHz] Small Signal Gain, Input Return Loss vs. Frequency 0 500 1000 1500 2000 2500 3000 3500 4000 μ' Factor μ F actor Frequency [MHz] μ Factor vs. Frequency

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE21056WD Test Board Component Layout COU1 Asymmetric Coupler CMX21Q05 RN2 COU2 Doherty Combiner CXH21Q BDS100VC33MJ10TP R1, R2 GRM188R71H102KA01D - - MURATA C4, C14 100nF Chip Capacitor GRM188R71C104KA01D MURATA C3, C13 1nF Chip Capacitor TCJB476M010R0070 AVX C17 0.3pF High Q Capacitor 201CHA0R3BSLE TEMEX S1206N RN2 C22, C28 33uF Aluminum Capacitor C20, C25 SAMYOUNG T1 50 ohm Power Resistor RS80R2A226M-TPNT MARUWA UQCAVA100JATME AVX C6 0.5pF High Q Capacitor 201CHA0R5BSLE TEMEX C7, C8, C11 - RN2 C9 1.2pF High Q Capacitor 201CHA1R2BSLE TEMEX C16, C23 10pF High Q Capacitor 201CHA101JSLE TEMEX C21, C27 22uF MLCC ANY RFHIC EMI1, EMI2 Description Part Number ManufacturerPart C5, C15 47uF Polymer Capacitor 10pF High Q Capacitor 201CHA100JSLE TEMEX C2, C12 10pF Chip Capacitor GRM1885C1H100JA01D MURATA C1, C10, C16, C18, C19, C23, C24, C26 10ohm Chip Resistor MCR03EZPJ100 ROHM 100pF High Q Capacitor CTH32R102S20A-TM MARUWA CON1, CON2 DC Connector LW0640-10 HANLIM CON3 1000pF EMI Filter PCB εr=3.66 ± 0.05, 0.030” (0.762mm) RO4350B ROGERS TR 56W GaN Transistor IE21056WD CON4 RF Connector KCN8043110070 RF Connector SMA-4Hole ANY IC1

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE21056WD Pin No ⓒ- Flange INCH MILLIMETER MIN TYP 9.89 .379 .384 .389 9.63 .379 .035 0.18 .567 .587 .606 14.4 1.57 1.7 0.13.003 6.69 .104 .109 2.91 .258 .263 6.43 6.56 2.78 Function .031 .036 .041 9.63 .395 .067 1.45 .005 .007 0.08 9.76 .253 14.9 Pin Description - .001 - Dim. - 0.03 -F4 0.79 .384 .389 10.29 .395 .400 ⓐ- Lid .057 .062 ⓑ- Lead Frame .115 2.65 MAX MIN TYP .405 10.03 10.16 9.76Path A Gate C1 (Chamfer) MAX 9.89A2 15.4 Path B Gate Path A Drain 1.050.92 4.02

Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE21056WD

Revision History

Data Sheet StatusDescriptionRelease Date 1.0IE21056WD VersionPart Number March, 2016 Modified Electrical Characteristics RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1-919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034.