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GaN Power Transistors IE18085P GaN Power Transistors IE18085P Product Features Applications

  • 1805~1880MHz • WiMAX, LTE, WCDMA, GSM
  • 85W Saturated Power @ 48V • Multi Band Multi Mode
  • 85W Saturated Power @ 48V • Multi-Band, Multi-Mode
  • 72% Drain Efficiency @ Psat • Multi-Carrier
  • 36% Drain Efficiency @ 42 8dBm • High Efficiency Doherty Amplifier
  • 36% Drain Efficiency @ 42.8dBm • High Efficiency, Doherty Amplifier IE18085P NS-AS01 Typical Single-Carrier LTE Performance (VDS= +48V, TC=25℃, 50Ω)yp g C ) Frequency [MHz] Average Power*1Peak Power Drain Efficiency [%] Frequency [MHz] Power [W] Drain Efficiency [%] 1810 0 107 2 78 1 19 19 3 37 7 -29 7 Power [W] Gain [dB] ACLR [dBc] Note N *1 Measured in the IE18085P test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF. Absolute Maximum RatingsAbsolute Maximum Ratings Value UnitRating Symbol Condition V V 150 10 +2 Tc=25℃ Tc=25℃ Drain to Source Voltage Gate to Source Voltage VDSS V V VDC -10, +2 Tc=25℃ Gate to Source Voltage Operating Voltage VGS VDD IGMAX mA12 Tc=25℃ Maximum Forward Gate Current Maximum Drain Current*1 I 45 A Tc=25℃ PDISS W48 Tc=85℃ Power Dissipation Maximum Drain Current IDMAX 4.5 A Tc=25℃ TSTG TC -65, +150 30 seconds Storage Temperature Case Operating Temperature 40 +150TC TJ 30 seconds Case Operating Temperature Operating Junction Temperature*2 -40, +150 250 Note 245 ℃ Soldering Temperature*3 TS Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF. The recommended maximum TJ is 225℃Cp J *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics Rating Symbol Value Unit Condition 2.90 *1 Note ℃/W Tc=85℃ Thermal Resistance, Junction to Case RθJC *1 Measured for the IE18085P at dissipation power of 48W. This is the maximum value. Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 7 All specifications may change without notice Version 0.1

GaN Power Transistors IE18085P GaN Power Transistors IE18085P Electrical Characteristics (TC=25℃ unless otherwise noted)( C ) Characteristics Conditions Symbol Min Typ Max Unit VDS = 10V DC Characteristics*1 DS ID = Gate Threshold Voltage 10V VGS(TH) VDC 10.8mA -3.55 -3.1 -2.65 VDS = ID = VDC 350mA Gate Quiescent Voltage VDS = V = Saturated Drain Current*2 6V IDS A -9.0 10.8VGS = VGS = VDrain Source Breakdown Voltage -8V V 150ID = VGS = 8V V 10.8mA Drain-Source Breakdown Voltage VBR 150 -- VGS VDS = Gate Leakage Current -8V IGLKG -2.4 - - mA 120V VGS = VDS = mA 120V -8V IDLKG 4.3-- Drain Leakage Current DS V 120V RF Characteristics (Fc=1842.5MHz unless otherwise noted) VDS = IDQ = Saturated Output Power*3,6 48V PSAT 85 350mA -- W Q VDS = I = %350 AP l d D i Effi i *3 48V 67 72IDQ = POUT = - %350mA PSAT Pulsed Pulsed Drain Efficiency 3 η 67 72 VDS = IDQ = 19 0 dBModulated Gain*4 48V GBR350mA 17 0IDQ POUT = 19.0 - dB Modulated Gain GBR350mA 42.8dBm 17.0 VDS = IDQ = -28.0 dBc350mA -26.0LTE Linearity*4 48V ACLR -DQ POUT = V 28.0 dBc350mA 42.8dBm

26.0 LTE Linearity ACLR

VDS = IDQ = 350mA 33.0 36.0 - % Modulated Drain Efficiency*4 48V η POUT = V = 48V 42.8dBm y VDS = IDQ = Output Mismatch Stress*3, 5 48V VSWR - - 10:1 ψ350mA POUT = Note PSAT Pulsed Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data. *3 Pulse width 100μsec, Duty Cycle 10%. *4 Measured in the IE18085P test board amplifier circuit, under LTE 10MHz, PAR7.5dB @0.01% probability on CCDF. *5 Measured in the IE18085P test board amplifier circuit. No damage at all phase angles. *6 Psat is defined as ΔPout/ΔPin<0.1, where ΔPin is increased input power, ΔPout is increased output power. Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 7 All specifications may change without notice Version 0.1

GaN Power Transistors IE18085P GaN Power Transistors IE18085P Typical Pulsed Signal Performance (Tc=25℃, Measured in the IE18085P test board amplifier circuit)yp g 10056 Peak Power, Drain Efficiency vs. Frequency 8024 Pulsed Power Gain, Drain Efficiency vs. Output Power Drain 100 Power Gain Effiiciency cy [%] dBm] 50 cy [%] [dB] Power Gain 1805MHz Power Gain 1842.5MHz Power Gain 1880MHz in Efficienc ak Power [d in Efficienc ower Gain [ Power Gain 1880MHz Drain Efficiency 1805MHz Drain Efficiency 1842.5MHz Drain Efficiency 1880MHz Peak Power Dra Pea Drain Efficiency Dra Po y 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 Frequency [MHz] 28 30 32 34 36 38 40 42 44 46 48 50 52 Output Power [dBm] VDS = 48V, IDQ = 350mA, Pulse Width = 100μsec, Duty Cycle = 10% DS 48V, DQ 350mA, Pulse Width 100μsec, Duty Cycle 10% Typical LTE Signal Performance (Tc=25℃, Measured in the IE18085P test board amplifier circuit) LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain, Drain Efficiency vs. Output Power PARC yq y Power Gain 70 24 yp Drain Effiiciency -5 ency [%] Power Gain D i Effii i Power Gain Power Gain 2505MHz PG i -15 -10 ], PARC [dB Drain Effici Drain Effiiciency ACLR-L ACLR-U PARC 40 18 iciency [%] Gain [dB] Power Gain 2505MHz Power Gain 2595MHz Power Gain 2685MHz Drain Efficiency 2505MHz Drain Efficiency 2595MHzPower Gain -25 -20 ACLR [dBc] Gain [dB], D Drain Effi Power G y Drain Efficiency 2685MHz ACLR -35 -30 A Power G Drain Efficiency -40 0 1770 1780 1790 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900 1910 Frequency [MHz] ce c y 0 10 28 30 32 34 36 38 40 42 44 46 Output Power [dBm]Frequency [MHz] Output Power [dBm] PARC ACLR vs. Output Power -15 1 PARC, ACLR vs. Output Power PARC -20 0 dBc]PARC 2505MHz -25 ACLR-U [d C[dB] C 505 PARC 2595MHz PARC 2685MHz ACLR-L 2505MHz ACLR-L 2595MHz ACLR-L 2685MHz -35 -30 R-L [dBc], PARC ACLR-U 2505MHz ACLR-U 2595MHz ACLR-U 2685MHz ACLR -40 -4 ACLR -45 -5 28 30 32 34 36 38 40 42 44 46 Output Power [dBm] PAVG = 42.8dBm, VDS = 48V, IDQ = 350mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF ,@ y Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 7 All specifications may change without notice Version 0.1

GaN Power Transistors IE18085P GaN Power Transistors IE18085P Typical 2-tone Intermodulation Imbalance Performanceyp (Tc=25℃, Measured in the IE18085P test board amplifier circuit) Intermodulation vs. Tone Spacing -10 -20 -15 on [dBc] -25 ermodulatio -30 Inte IM3-L IM5-L -40 -35 1 10 100 IM5 L IM3-U IM5-U 1 10 100 Tone Spacing [MHz] 2-tone Power = 47.3dBm, VDS = 48V, IDQ = 350mA Typical Small Signal Performance (Tc=25℃, Measured in the IE18085P test board amplifier circuit) Small Signal Gain, Input Return Loss vs. Frequency μFactor vs. Frequency 5 25 Small Signal Gain, Input Return Loss vs. Frequency 6 6 μFactor vs. Frequency Small Signal Gain 5 5 -10 Loss [dB] al Gain [dB] actor actor IRL -15 Return L Small Signa μ' Fa μFa -25 -20 S 1 1 -30 -10 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 Frequency [MHz] 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency [MHz]Frequency [MHz] Frequency [MHz] PIN = 0dBm, V DS = 48V, IDQ = 350mA Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 7 All specifications may change without notice Version 0.1

GaN Power Transistors IE18085P GaN Power Transistors IE18085P Test Board Component Layoutpy Description Part Number ManufacturerPart 100 ohm Chip Resistor MCR10 EZHJ101 ROHMR1 20 ohm Chip Resistor MCR10 EZHJ200 ROHMR2 201CHA100JSLE TEMEX C1 5.6pF High Q Capacitor 201CHA5R6CSLE TEMEX C2 10pF High Q Capacitor 201CHA100JSLE TEMEX C3 Polymer Capacitor TCJB476M010R0070 AVX C2 10pF High Q Capacitor GRM188R71H104KA01D MURATA C5 10nF Chip Capacitor GRM188R71H103KA01D MURATA C4 100nF Chip Capacitor C6 10pF Chip Capacitor GRM1885C1H100JA01D MURATA C10 22pF High Q Capacitor 501CHB220JSLE TEMEX C16 1F H ih Q C i 501CHB1R0BSLE TEMEX C10 22pF High Q Capacitor 501CHB220JSLE TEMEX C14 10uF MLCC RS80R2A106M MARUWA C16 1pF High Q Capacitor 501CHB1R0BSLE TEMEX C17 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG C19 18pF High Q Capacitor 501CHB180JSLE TEMEX MARUWA EMI1 1000 F EMI Filt CTH32R102S20A C7, C8, C9, C11, C12 MARUWAEMI1 1000pF EMI Filter CTH32R102S20A CON1 5045-10 MOLEXDC Connector TR1 85W GaN Transistor IE18085H RFHIC Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 7 All specifications may change without notice Version 0.1

GaN Power Transistors IE18085P GaN Power Transistors IE18085P INCH MILLIMETER Pin Description Pin No MIN TYP 97 5 99 0 MAX MIN TYP MAX 380 Function G p Dim. A1 96 5384 3901 9.75 9.90 9.75 9.90 .380 .384 .390 9.65 .380Gate Drain A1 9.65.384 .390 7.23 579 598 618 14 70 15 20 15 70 ⓐ- Lid .004 .005 .007 0.10 B3 0.13 0.18 2.28 C1 (Chamfer) ⓑ- Lead Frame 2.00 2.10 ⓒ Flange .075 .079 .083 1.90 .405F1 C1 (Chamfer) 10.29 148 159 167 37 5 40 5 - .001 - -F4 42 5 0.03 L1 --- 4.25 05 0 06 0 --- R1 (Radius) 016 020 024 04 0 L2 --- Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 7 All specifications may change without notice Version 0.1

GaN Power Transistors IE18085P GaN Power Transistors IE18085P Revision Historyy Part Number Release Date Data Sheet StatusDescriptionVersion PreliminaryInitial Release of Data sheetIE18085P 0.1 April, 2015 Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 7 All specifications may change without notice Version 0.1 RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1-919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034.