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Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors Product Features Applications

  • 758~858MHz • WiMAX, LTE, WCDMA, GSM
  • 220W Saturated Power @ 48V • Multi-Band, Multi-Mode
  • 75% Drain Efficiency @ Psat • Multi-Carrier
  • 38% Drain Efficiency @ 47dBm • High Efficiency, Doherty Amplifier
  • Internally Matched IE08220P NS-AS01 Typical Single-Carrier LTE Performance (VDS= +48V, TC=25℃, 50Ω) Note *1 Measured in the IE08220P test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF Absolute Maximum Ratings Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF. *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics Note *1 Measured for the IE08220P at dissipation power is 105.1W. Rating Drain to Source Voltage Gate to Source Voltage Operating Voltage Maximum Forward Gate Current Power Dissipation Storage Temperature Case Operating Temperature Operating Junction Temperature*2 Symbol VDSS VGS VDD Rating Symbol Value -40, +150 Condition Unit Condition Maximum Drain Current*1 IDMAX 12 A Tc=25℃ Soldering Temperature*3 TS 245 853.0 Drain Efficiency [%] 40.0 IE08220P Frequency [MHz] Average Power*1Peak Power 243.8 Power [W] 77.4 Drain Efficiency [%] Power [W] 20.9 Gain [dB] ACLR [dBc] -28.7 ℃/W Tc=85℃ 225 Value Unit V V VDC mA W 150 -10, +2 105 -65, +150 Tc=85℃ Tc=25℃ Tc=25℃ 30 seconds Tc=25℃I GMAX PDISS TSTG TC TJ Thermal Resistance, Junction to Case RθJC 1.33

Korean Facilities : 82-31-8069-3036 / rfsales@rfh ic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE08220P Electrical Characteristics (TC=25℃ unless otherwise noted) VDS = ID = VDS = ID = VDS = VGS = VGS = ID = VGS = VDS = VGS = VDS = VDS = IDQ = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data. *3 Pulse width 100μsec, Duty Cycle 10%. *4 Measured in the IE08220P test board amplifier circuit, under LTE 10MHz, PAR7.5dB @0.01% probability on CCDF. *5 Measured in the IE08220P test board amplifier circuit. No damage at all phase angles. *6 Psat is defined as ΔPout/ΔPin<0.1, where ΔPin is increased input power, ΔPout is increased output power. - dB -29.0 dBc1000mA 47dBm -26.0 LTE Linearity*4 48V ACLR 1000mA PSAT Pulsed Modulated Gain*4 48V GBR Pulsed Drain Efficiency*3 48V η 1000mA 47dBm 70.0 17.0 75.0 DC Characteristics*1 Typ Max Unit -3.0 -2.8 28.8 -2.3 - % 20.0 1000mA 47dBm 34.0 38.0 - % Modulated Drain Efficiency*4 48V η Output Mismatch Stress*3, 5 48V VSWR V 28.8mA Saturated Output Power*3,6 48V PSAT Drain-Source Breakdown Voltage -8V VBR VDC 1000mA Saturated Drain Current*2 6V IDS A Gate Quiescent Voltage 48V VGS(Q) 150 220 11.5- 24.0 1000mA - - W 10V V GS(TH) VDC 28.8mA Characteristics Conditions Symbol Min -3.8 RF Characteristics (Fc=808MHz unless otherwise noted) Gate Threshold Voltage Drain Leakage Current -8V IDLKG - - 10:1 ψ1000mA PSAT Pulsed mA 120V Gate Leakage Current -8V IGLKG -6.3 - - mA 120V

Korean Facilities : 82-31-8069-3036 / rfsales@rfh ic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE08220P Typical Pulsed Signal Performance (Tc=25℃, Measured in the IE08220P test board amplifier circuit) VDS = 48V, IDQ = 1000mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the IE08220P test board amplifier circuit) PAVG = 47dBm, VDS = 48V, IDQ = 1000mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Peak Power Drain Effiiciency 100 683 708 733 758 783 808 833 858 883 908 Drain Efficiency [%] Peak Power [dBm] Frequency [MHz] Peak Power, Drain Efficiency vs. Frequency Power Gain Drain Efficiency 32 34 36 38 40 42 44 46 48 50 52 54 56 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Pulsed Power Gain, Drain Efficiency vs. Output Power Power Gain 758MHz Power Gain 808MHz Power Gain 858MHz Drain Efficiency 758MHz Drain Efficiency 808MHz Drain Efficiency 858MHz Power Gain Drain Effiiciency ACLR PARC -40 -35 -30 -25 -20 -15 -10 700 735 770 805 840 875 910 ACLR [dBc], PARC [dB] Power Gain [dB], Drain Efficiency [%] Frequency [MHz] LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain Drain Effiiciency ACLR-L ACLR-U PARC Power Gain Drain Efficiency 32 34 36 38 40 42 44 46 48 50 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Power Gain, Drain Efficiency vs. Output Power Power Gain 763MHz Power Gain 808MHz Power Gain 853MHz Drain Efficiency 763MHz Drain Efficiency 808MHz Drain Efficiency 853MHz PARC ACLR -45 -40 -35 -30 -25 -20 -15 32 34 36 38 40 42 44 46 48 50 ACLR-L [dBc], ACLR-U [dBc] PARC[dB] Output Power [dBm] PARC, ACLR vs. Output Power PARC 763MHz PARC 808MHz PARC 853MHz ACLR-L 763MHz ACLR-L 808MHz ACLR-L 853MHz ACLR-U 763MHz ACLR-U 808MHz ACLR-U 853MHz

Korean Facilities : 82-31-8069-3036 / rfsales@rfh ic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE08220P Typical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the IE08220P test board amplifier circuit) 2-tone Power = 51.4dBm, VDS = 48V, IDQ = 1000mA Typical Small Signal Performance (Tc=25℃, Measured in the IE08220P test board amplifier circuit) PIN = 0dBm, VDS = 48V, IDQ = 1000mA -45 -40 -35 -30 -25 -20 -15 -10 1 10 100 Intermodulation [dBc] Tone Spacing [MHz] Intermodulation vs. Tone Spacing IM3-L IM5-L IM3-U IM5-U Small Signal Gain IRL -20 -15 -10 300 440 580 720 860 1000 1140 1280 Return Loss [dB] Small Signal Gain [dB] Frequency [MHz] Small Signal Gain, Input Return Loss vs. Frequency 0 500 1000 1500 2000 2500 3000 3500 4000 μ' Factor μ F actor Frequency [MHz] μ Factor vs. Frequency

Korean Facilities : 82-31-8069-3036 / rfsales@rfh ic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE08220P Test Board Component Layout DC Connector 5045-10 MOLEX EMI EMI FILTER CTH32R102S20A-TM MARUWA CON1 TR 220W GaN Transistor IE08220P RFHIC Description Part Number ManufacturerPart C5 100pF Chip Capacitor 6.8pF High Q Capacitor 201CHA6R8CSLE TEMEX C2 8.2pF High Q Capacitor 201CHA8R2CSLE TEMEX C6 10nF Chip Capacitor GRM188R71H103KA01D MURATA C7 100nF Chip Capacitor SAMYOUNG GRM188R71H104KA93D MURATA C8 Polymer Capacitor TCJB476M010R0070 AVX C9 0.5pF High Q Capacitor 501CHB270JSLE TEMEX C12 100pF High Q Capacitor 501CHB101JSLE TEMEX 501CHB0R5BSLE TEMEX 10 ohm Chip Resistor MCR10EZHJ100 ROHMR1,R2 201CHA6R2CSLE 501CHB102JSLE TEMEX C14 10uF MLCC RS80R2A106M MARUWA C15 33uF Aluminum Capacitor BDS100VC33MJ10TP C13 1nF High Q Capacitor C11 27pF High Q Capacitor TEMEX C4 5.6pF High Q Capacitor 201CHA5R6CSLE TEMEX C3 6.2pF High Q Capacitor GRM188R71H101KA01D MURATA C10 12pF High Q Capacitor 501CHB120JSLE TEMEX

Korean Facilities : 82-31-8069-3036 / rfsales@rfh ic.com US F acility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 GaN Power Transistors IE08220P Pin No C1 (Chamfer) - - 0.13 0.18 ⓑ- Lead Frame 4.25 0.03 - - 0.50 0.60 .384 .390 L1 - L2 - - - Dim. Drain Source Pin Description - .001 - Function Gate 9.65 10.29 9.75 9.90 .380 .384 .390 9.65 MAX MIN TYP MAX .380 .405 2.28 ⓐ- Lid .004 .005 .007 0.10 2.00 2.10 ⓒ- Flange .075 .079 .083 1.90 7.23 9.75 9.90 INCH MILLIMETER MIN TYP - - - R1 (Radius) .016 .020 .024 0.40

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.co m All specifications may change without notice Version 1.0 GaN Power Transistors IE08220P

Revision History

1.0March, 2016 Data Sheet StatusDescription Modified Thermal Characteristics Release Date IE08220P VersionPart Number RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1-919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034.