IDWD20G120C5 INFINEON | Alldatasheet

Document overview

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Technical content

Features

 No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS compliant Potential applications  Industrial power supplies: Industrial UPS  Infrastructure-Charge: Charger  Metal treatment: Welding  Solar central inverters, Solar string inverter and Solar optimizer Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Description

 System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  Related Links: www.infineon.com/SiC Key performance parameters Type VDC IF QC Tvj,max Marking Package IDWD20G120C5 1200 V 20 A 106nC 175°C D2012C5 PG-TO247-2 CASE Pin 1 and backside: Cathode Pin 2: Anode Pin definition

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com page 2 of 12 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Table of contents Table of contents

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com page 3 of 12 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Maximum ratings

1 Maximum ratings

Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Parameter Symbol Value Unit Repetitive peak reverse voltage TC ≥ 25°C VRRM 1200 V Continuous forward current for Rth(j-c,max) TC = 156°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 IF A Surge repetitive forward current, sine halfwave1 TC=25°C, tp=10ms TC=100°C, tp=10ms IF,RM A Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms IF,SM 190 180 A Non-repetitive peak forward current TC = 25°C, tp=10 µs IF,max 1774 A i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms ∫ i²dt 180 162 A²s Diode dv/dt ruggedness VR=0...960 V dv/dt 150 V/ns Power dissipation for Rth(j-c,max) TC = 25°C Ptot 250 W 1 Not subject to production test. The test was performed with 20000 pulses (two consecutive half-wave rectified sines with 10 ms period).

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com page 4 of 12 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Maximum ratings Operating temperature Tvj -55…175 °C Storage temperature Tstg -55…150 °C Soldering temperature, wave soldering only allowed at leads 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com page 5 of 12 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Thermal resistances

2 Thermal resistances

Parameter Symbol Conditions Value Unit min. typ. max. Characteristic Diode thermal resistance, junction – case Rth(j-c) - 0.45 0.6 K/W Thermal resistance, junction – ambient Rth(j-a) leaded - - 62 K/W

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com page 6 of 12 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Electrical Characteristics

3 Electrical Characteristics

Static Characteristics, at Tvj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. DC blocking voltage VDC Tvj= 25°C, IR=500µA 1200 - - V Diode forward voltage VF IF= 20A, Tvj=25°C IF= 20A, Tvj=150°C 1.4 1.7 1.65 - V Reverse current IR VR=1200V, Tvj=25°C VR=1200V, Tvj=150°C 166 - µA Dynamic Characteristics, at Tvj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Total capacitive charge QC VR = 800V, Tvj=150°C & 25°C RV C dVVCQ - 106 - nC Total Capacitance C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz 1368 pF

4 Electrical Characteristics Diagrams

Figure 1. Power dissipation as function of Figure 2. Diode forward current as function Figure 3. Typical forward characteristics, Figure 4. Typical forward characteristic s in

Figure 9. Typical capacitively stored energy

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com page 10 of 12 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Package Drawing

5 Package Drawing

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com page 11 of 12 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diode SiC-Diode

Revision history

Date of release Description of changes V 1.0 2018-12-21 Preliminary Datasheet V 2.0 2019-01-30 Final Datasheet V 2.1 2021-03-01 Increased dv/dt ruggedness

81726 München, Germany

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