IDWD100E120D7 INFINEON | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Features

  • V RRM = 1200 V
  • I F = 100 A
  • 1200 V emitter controlled technology
  • Maximum junction temperature T vjmax = 175°C
  • Low forward voltage (V F)
  • Low reverse recovery charge
  • Ultrafast recovery times
  • Soft recovery characteristics
  • Pb-free lead plating; RoHS compliant
  • Humidity robust design Potential applications
  • String inverter
  • EV-Charging
  • Heat pump Product validation
  • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Copyright © Infineon Technologies AG 2021. All rights reserved. 18 PG-TO247-2-STD-NA8.8 2021-10-27 restricted

Description

Pin definition:

  • Pin 1 and backside - Cathode
  • Pin 2 - Anode CASE Type Package Marking IDWD100E120D7 PG-TO247-2-STD-NA8.8 E100MD7 IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2023-12-15

Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Table of contents Datasheet 2 Revision 1.00 2023-12-15

1 Package

Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Internal emitter inductance measured 5 mm (0.197 in.) from case LE 13 nH Storage temperature Tstg -55 150 °C Soldering temperature Tsold wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C Mounting torque M M3 screw, Maximum of mounting processes: 0.6 Nm Thermal resistance, junction-ambient Rth(j-a) 40 K/W Diode thermal resistance, junction-case Rth(j-c) 0.29 0.38 K/W

2 Diode

Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj ≥ 25 °C 1200 V Diode forward current, limited by Tvjmax IF Tc = 25 °C 146 A Tc = 91 °C 100 Diode pulsed current, tp limited by Tvjmax IFpulse 400 A Diode surge non repetitive forward current, sine halfwave IFSM tp = 10 ms Tc = 25 °C 329 A Diode surge repetitive forward current, sine halfwave1) IFRM tp = 10 ms Tc = 25 °C 300 A Power dissipation Ptot Tc = 25 °C 392 W Tc = 100 °C 196 1) Not subject to production test. The test was performed with 20k pulses (half-wave rectified sine with 10 ms period). IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 3 Revision 1.00 2023-12-15

Table 3 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode forward voltage VF IF = 100 A Tvj = 25 °C 2.5 3 V Tvj = 150 °C 2.35 Tvj = 175 °C 2.3 Reverse leakage current IR VR = 1200 V Tvj = 25 °C 20 µA Tvj = 175 °C 1560 Diode reverse recovery time trr VR = 800 V Tvj = 25 °C, IF = 100 A, -diF/dt = 1000 A/µs 205 ns Tvj = 25 °C, IF = 50 A, -diF/dt = 1000 A/µs 155 Tvj = 175 °C, IF = 100 A, -diF/dt = 1000 A/µs 210 Tvj = 175 °C, IF = 50 A, -diF/dt = 1000 A/µs 180 Diode reverse recovery charge Qrr VR = 800 V Tvj = 25 °C, IF = 100 A, -diF/dt = 1000 A/µs 2.45 µC Tvj = 25 °C, IF = 50 A, -diF/dt = 1000 A/µs 1.75 Tvj = 175 °C, IF = 100 A, -diF/dt = 1000 A/µs 4.65 Tvj = 175 °C, IF = 50 A, -diF/dt = 1000 A/µs 3.35 (table continues...) IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 4 Revision 1.00 2023-12-15

Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode peak reverse recovery current Irrm VR = 800 V Tvj = 25 °C, IF = 100 A, -diF/dt = 1000 A/µs 23 A Tvj = 25 °C, IF = 50 A, -diF/dt = 1000 A/µs Tvj = 175 °C, IF = 100 A, -diF/dt = 1000 A/µs Tvj = 175 °C, IF = 50 A, -diF/dt = 1000 A/µs Diode peak rate of fall of reverse recovery current dirr/dt VR = 800 V Tvj = 25 °C, IF = 100 A, -diF/dt = 1000 A/µs

100 A/µs

Tvj = 25 °C, IF = 50 A, -diF/dt = 1000 A/µs 140 Tvj = 175 °C, IF = 100 A, -diF/dt = 1000 A/µs 160 Tvj = 175 °C, IF = 50 A, -diF/dt = 1000 A/µs 220 Reverse recovery energy Erec VR = 800 V Tvj = 25 °C, IF = 100 A, -diF/dt = 1000 A/µs 0.75 mJ Tvj = 25 °C, IF = 50 A, -diF/dt = 1000 A/µs 0.55 Tvj = 175 °C, IF = 100 A, -diF/dt = 1000 A/µs 1.5 Tvj = 175 °C, IF = 50 A, -diF/dt = 1000 A/µs Operating junction temperature Tvj -40 175 °C IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 5 Revision 1.00 2023-12-15

Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Electrical Characteristic at Tvj = 25°C, unless otherwise specified. Dynamic test circuit, parasitic inductance Lσ = 27 nH, parasitic capacitor Cσ = 12 pF from Fig. E, IKY100N120CH7 was used as IGBT . IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 6 Revision 1.00 2023-12-15

3 Characteristics diagrams

Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T Typical diode forward current as a function of forward voltage IF = f(VF) 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 0 1 2 3 4 5 100 150 200 250 300 350 400 Typical diode forward voltage as a function of junction temperature VF = f(Tvj) Typical reverse recovery time as a function of diode current slope trr = f(diF/dt) VR = 800 V, IF = 100 A 25 50 75 100 125 150 175 0 500 1000 1500 2000 2500 3000 3500 100 150 200 250 300 IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 7 Revision 1.00 2023-12-15

Typical reverse recovery charge as a function of diode current slope Qrr = f(diF/dt) VR = 800 V, IF = 100 A Typical reverse recovery current as a function of diode current slope Irrm = f(diF/dt) VR = 800 V, IF = 100 A 0 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 3000 3500 100 Typical diode peak rate of fall of reverse recovery current as a function of diode current slope dirr/dt = f(diF/dt) VR = 800 V, IF = 100 A Typical reverse energy losses as a function of diode current slope Erec = f(diF/dt) VR = 800 V, IF = 100 A 0 500 1000 1500 2000 2500 3000 3500 -800 -700 -600 -500 -400 -300 -200 -100 0 500 1000 1500 2000 2500 3000 3500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 8 Revision 1.00 2023-12-15

4 Package outlines

DIMENSIONS MIN. MAX. MILLIMETERS PG-TO247-2-U01 PACKAGE - GROUP NUMBER: 10.88 c D E e N A b 0.59 2.40 4.90 20.90 16.25 15.70 1.05 13.10 1.96 4.90 2.31 1.16 1.90 0.66 16.85 2.60 5.10 13.50 21.10 15.90 1.35 2.06 5.10 2.51 1.26 2.10 Q L S øP 6.05 5.60 --- 3.50 19.80 6.25 6.00 3.70 20.10 4.30 øP1 7.00 7.40 Q1 9.80 10.20 øP2 2.40 2.60 E4 6.00 6.40 PG-TO247-2-STD-NA8.8 Figure 1 IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 9 Revision 1.00 2023-12-15

5 Testing conditions

t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCC t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions Figure 2 IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 10 Revision 1.00 2023-12-15

Revision history

Document revision Date of release Description of changes 1.00 2023-12-15 Final datasheet IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Datasheet 11 Revision 1.00 2023-12-15

All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-12-15 Published by Infineon Technologies AG

81726 Munich, Germany

© 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABG577-001 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.