IDW75E60 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1 Rev. 1.1 Mar 06 Features:

  • 600 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • 175 °C junction operating temperature
  • Easy paralleling
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models: http://www.infineon.com/emcon/ Applications:
  • Welding
  • Motor drives Type V RRM I F VF,Tj=25°C Tj,max Marking Package IDW75E60 600V 75A 1.65V 175°C D75E60 PG-TO-247-3-21 Maximum Ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continuous forward current TC = 25°C TC = 90°C TC = 100°C IF 120 A Surge non repetitive forward current TC = 25°C, tp = 10 ms, sine halfwave IFSM 220 A Maximum repetitive forward current TC = 25°C, tp limited by tj,max, D = 0.5 IFRM 225 A Power dissipation TC = 25°C TC = 90°C TC = 100°C Ptot 300 170 150 W Operating junction and storage temperature Tj, Tstg -55 +175 °C Soldering temperature 1.6mm (0.063 in.) from case for 10 s TS 260 °C A C PG-TO-247-3-21

Power Semiconductors 2 Rev. 1.1 Mar 06 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic Thermal resistance, junction – case RthJC 0.5 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage VRRM IR =0.25mA 600 - - Diode forward voltage VF IF =75A Tj =25 °C Tj =175 °C 1.65 1.65 2.0 V Reverse leakage current IR VR =600V Tj =25 °C Tj =175 °C 1000 µA Dynamic Electrical Characteristics Diode reverse recovery time trr - 121 - ns Diode reverse recovery charge Qrr - 2.4 - µC Diode peak reverse recovery current Irr - 38.5 - A Diode peak rate of fall of reverse recovery current during tb dI rr /dt Tj =25 °C VR =400V, IF =75A, dI F /dt =1460A/µs - 921 - A/µs Diode reverse recovery time trr - 155 - ns Diode reverse recovery charge Qrrm - 4.4 - µC Diode peak reverse recovery current Irr - 46.6 - A Diode peak rate of fall of reverse recovery current during tb dI rr /dt Tj =125 °C VR =400V, IF =75A, dI F /dt =1460A/µs - 960 - A/µs Diode reverse recovery time trr - 182 - ns Diode reverse recovery charge Qrrm - 5.8 - µC Diode peak reverse recovery current Irr - 56.2 - A Diode peak rate of fall of reverse recovery current during tb dI rr /dt Tj =175 °C VR =400V, IF =75A, dI F /dt =1460A/µs - 1013 - A/µs

Figure 9. Diode transient thermal

Power Semiconductors 6 Rev. 1.1 Mar 06 Published by Infineon Technologies AG, Bereich Kommunikation Am Campeon 1-12, D-85579 Neubiberg © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.