IDP12E120 INFINEON | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • 1200 V diode technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • Easy paralleling
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • Qualified according to JEDEC for target applications PG-TO220-2

2009-08-19Rev.2.3 Page 2 IDP12E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=1200V, Tj=25°C VR=1200V, Tj=150°C IR 100 1000 µA Forward voltage drop IF=12A, Tj=25°C IF=12A, Tj=150°C VF 1.65 1.7 2.15 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2009-08-19Rev.2.3 Page 3 IDP12E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C trr 150 215 225 ns Peak reverse current VR=800V, IF = 12 A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Irrm 20.9 21.5 A Reverse recovery charge VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Qrr 1200 1840 2025 nC Reverse recovery softness factor VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C S 5.8 5.9

2009-08-19Rev.2.3 Page 4 IDP12E120

2 Diode forward current

IF = f(TC) parameter: Tj≤ 150°C 25 50 75 100 °C 150 TC A IF

1 Power dissipation

P tot = f (TC) parameter: Tj ≤ 150°C 25 50 75 100 °C 150 TC W 100 Ptot 3 Typ. diode forward current I F = f (VF) 0 0.5 1 1.5 2 V 3 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.2 1.4 1.6 1.8 V 2.4 VF 12A 24A

2009-08-19Rev.2.3 Page 5 IDP12E120 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 100 200 300 400 500 600 ns 800 trr 24A 12A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 800V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 nC 2500 Qrr 12A 24A 7 Typ. reverse recovery current I rr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt A Irr 24A 12A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt S 24A 12A

2009-08-19Rev.2.3 Page 6 IDP12E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IDP12E120 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2009-08-19Rev.2.3 Page 7 TO-220-2 IDP12E120

2009-08-19Rev.2.3 Page 8 IDP12E120 Published by Infineon Technologies AG

81726 Munich, Germany

81726 München, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.