IDB12E120 INFINEON | Alldatasheet

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Technical content

2003-07-31Rev.2 Page 1 IDP12E120 IDB12E120 Fast Switching EmCon Diode Product Summary VRRM 1200 V IF 12 A VF 1.65 V Tjmax 150 °C Feature

  • 1200 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • Easy paralleling P-TO220-3.SMD P-TO220-2-2. Pin 1 PIN 2 PIN 3 C A - NC C A Marking D12E120 D12E120 Type Package Ordering Code IDP12E120 P-TO220-2-2. Q67040-S4389 IDB12E120 P-TO220-3.SMD Q67040-S4385 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current TC=25°C TC=90°C IF A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 63 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 42.5 Power dissipation TC=25°C TC=90°C Ptot W Operating and storage temperature Tj , Tstg -55...+150 °C Soldering temperature 1.6mm(0.063 in.) from case for 10s TS 260 °C

2003-07-31Rev.2 Page 2 IDP12E120 IDB12E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=1200V, Tj=25°C VR=1200V, Tj=150°C IR 100 1000 µA Forward voltage drop IF=12A, Tj=25°C IF=12A, Tj=150°C VF 1.65 1.7 2.15 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2003-07-31Rev.2 Page 3 IDP12E120 IDB12E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C trr 150 215 225 ns Peak reverse current VR=800V, IF = 12 A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Irrm 20.9 21.5 A Reverse recovery charge VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Qrr 1200 1840 2025 nC Reverse recovery softness factor VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C S 5.8 5.9

2003-07-31Rev.2 Page 4 IDP12E120 IDB12E120

2 Diode forward current

IF = f(TC) parameter: Tj≤ 150°C 25 50 75 100 °C 150 TC A IF

1 Power dissipation

Ptot = f (TC) parameter: Tj ≤ 150°C 25 50 75 100 °C 150 TC W 100 Ptot 3 Typ. diode forward current IF = f (VF) 0 0.5 1 1.5 2 V 3 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.2 1.4 1.6 1.8 V 2.4 VF 12A 24A

2003-07-31Rev.2 Page 5 IDP12E120 IDB12E120 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 100 200 300 400 500 600 ns 800 trr 24A 12A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 800V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 nC 2500 Qrr 12A 24A 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt A Irr 24A 12A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt S 24A 12A

2003-07-31Rev.2 Page 6 IDP12E120 IDB12E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IDP12E120 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2003-07-31Rev.2 Page 7 IDP12E120 IDB12E120 TO-220-2-2 symbol [mm] [inch] min max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L M N P 1.10 1.40 0.0433 0.0551 T U V W X 0.00 0.40 0.0000 0.0157 0.26 typ.6.6 typ. 0.51 typ.13.0 typ. 7.5 typ. 0.295 typ. 2.4 typ. 0.095 typ. 4.4 typ. 0.173 typ. 2.54 typ. 0.1 typ. dimensions 0.41 typ.1.05 typ. A U V W G M T J F L X P D C K N BH E

2003-07-31Rev.2 Page 8 IDP12E120 IDB12E120 symbol [mm] [inch] min max min max A 9.80 10.00 0.3858 0.3937 B C 1.25 1.75 0.0492 0.0689 D 0.95 1.15 0.0374 0.0453 E F 0.72 0.85 0.0283 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 3.30 3.90 0.1299 0.1535 R S 1.70 2.50 0.0669 0.0984 T 0.50 0.65 0.0197 0.0256 U V W X Y Z 9.40 typ. 0.3701 typ. 16.15 typ. 0.6358 typ. 6.43 typ. 0.2532 typ. 4.60 typ. 0.1811 typ. 10.8 typ. 0.4252 typ. 1.35 typ. 0.0532 typ. 14.1 typ. 0.5551 typ. 8° max 8° max dimensions 2.54 typ. 0.1 typ. 5.08 typ. 0.2 typ. 1.3 typ. 0.0512 typ. TO-220-3-45 (P-TO220SMD)

2003-07-31Rev.2 Page 9 IDP12E120 IDB12E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.