IDM10G120C5_15 INFINEON | Alldatasheet

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Silicon Carbide Schottky Diode Final Datasheet Rev. 2.0 2015-22-07 ID M10G 120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode

1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2015-22-07 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5 SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant Benefits  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduced EMI  Related Links: www.infineon.com/sic

Applications

 Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 and backside – cathode  Pin 2 – anode Key Performance and Package Parameters Type VDC IF QC Tj,max Marking Package

1) J-STD20 and JESD22 Final Data Sheet 3 Rev. 2.0, 2015-22-07 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5 IDM10G120C5 1200V 10A 41nC 175°C D1012C5 PG-TO252-2 Table of Contents

Final Data Sheet 4 Rev. 2.0, 2015-22-07 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5 Maximum ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continoues forward current for Rth(j-c,max) TC = 160°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 IF A Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms IF,SM Non-repetitive peak forward current TC = 25°C, tp=10 µs IF,max 711 i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms ∫ i²dt A²s Diode dv/dt ruggedness VR=0...960 V dv/dt 80 V/ns Power dissipation TC = 25°C Ptot 223 W Operating temperature Tj -55…175 Storage temperature Tstg -55…150 Soldering temperature, Wave- and reflowsoldering allowed (reflow MSL1) Tsold 260 Thermal Resistances Parameter Symbol Conditions Value Unit min. typ. max. Characteristic Diode thermal resistance, junction – case Rth(j-c) - 0.5 0.7 K/W Thermal resistance, junction – ambient Rth(j-a) SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm² cooling area2) 35 2) Device on 40 mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper for cathode connection. PCB is vertical without air stream cooling.

Final Data Sheet 5 Rev. 2.0, 2015-22-07 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5

Electrical Characteristics

Static Characteristic, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. DC blocking voltage VDC Tj = 25°C 1200 - - V Diode forward voltage VF IF= 10 A, Tj=25°C IF= 10 A, Tj=150°C 1.5 2.0 1.8 2.6 V Reverse current IR VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C 320 µA Dynamic Characteristics, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Total capacitive charge QC VR = 800 V, Tj=150°C RV C dVVCQ - 41 - nC Total Capacitance C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz 525 pF Electrical Characteristics diagram

Figure 9. Typical capacitance stored energy as

Final Data Sheet 9 Rev. 2.0, 2015-22-07 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5

Final Data Sheet 10 Rev. 2.0, 2015-22-07 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5

Revision History

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© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non -infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangero us substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life -support devices or systems and/or automotive, aviation an d aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support, automotive, aviation and aerospace device or system o r to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IIDM10G120C5 Revision: 2015-22-07, Rev. 2.0 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 - Final data sheet