IDDD04G65C6 INFINEON | Alldatasheet
Document overview
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Technical content
Features
Best in class forward voltage (1.25 V) Best in class figure of merit (Qc x VF) High dv/dt ruggedness (150 V/ns) Benefits System efficiency improvement System cost and size savings due to the reduced cooling requirements Enabling higher frequency and increased power density Potential Applications Power factor correction in SMPS Solar inverter Uninterruptible power supply Product Validation Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) Parameter Value Unit VRRM 650 V QC (VR = 400 V) 6.9 nC EC (VR = 400 V) 1.1 µJ IF (TC ≤ тц5 °C, D = 1) 4 A VF (IF = 4 A, Tj = 25 °C) 1.25 V PG-HDSOP-10-1 Pin 6-10 Pin 3-5 Pin 1-2: n.c. Pin 3-5: Anode Pin 6-10: Cathode Cathode
Final Datasheet 2 Rev. 2.0 , 2018-02-05 6th Generation CoolSiCTM IDDD04G65C6 Table of Content
Final Datasheet 3 Rev. 2.0 , 2018-02-05 6th Generation CoolSiCTM IDDD04G65C6
1 Maximum ratings
Parameter Symbol Values Unit Note/Test condition Min. Typ. Max. Continuous forward current IF – – 4 A TC ≤ 155 °C, D = 1 – – 7 TC ≤ 125 °C, D = 1 – – 13 TC ≤ уц °C, D = 1 Surge-repetitive forward current, sine halfwave1 IF,RM – – 18 TC = 25 °C, tp = 10 ms Surge non-repetitive forward current, sine halfwave IF,SM – – 29 TC = 25 °C, tp = 10 ms – – 23 TC = 150 °C, tp = 10 ms Non-repetitive peak forward current IF,max – – 250 TC = 25 °C, tp = 10 µs i²t value ∫ i²dt – – 4.3 A²s TC = 25 °C, tp = 10 ms – – 2.7 TC = 150 °C, tp = 10 ms Repetitive peak reverse voltage VRRM – – 650 V TC = 25 °C Diode dv/dt ruggedness dv/dt – – 150 V/ns VR = 0..480 V Power dissipation Ptot – – 56 W TC = 25°C, RthJC,max Operating and storage temperature Tj Tstg -55 – 175 °C –
2 Thermal characteristics
Table 4 Thermal characteristics Parameter Symbol Values Unit Note/Test condition Min. Typ. Max. Thermal resistance, junction- case RthJC – 1.6 2.6 K/W Thermal resistance, junction- ambient RthJA – – 62 Device on PCB, minimal footprint Thermal resistance, junction- ambient for SMD version RthJA – 35 45 Device on 40*40*1.5 mm epoxy PCB FR4 (one layer, 70 µm thickness) with 6 cm2 copper for cathode connection and cooling, PCB vertically placed without air stream cooling Soldering temperature Tsold – – 260 °C Allowed only reflow soldering 1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period).
Final Datasheet 4 Rev. 2.0 , 2018-02-05 6th Generation CoolSiCTM IDDD04G65C6
3 Electrical characteristics
3.1 Static characteristics
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test condition Min. Typ. Max. DC blocking voltage VDC 650 – – V Tj = 25 °C Diode forward voltage VF – 1.25 1.35 IF = 4 A, Tj = 25 °C – 1.5 – IF = 4 A, Tj = 150 °C Reverse current IR – 0.4 14 µA VR = 420 V, Tj = 25 °C – 13 – VR = 420 V, Tj = 125 °C – 31 – VR = 420 V, Tj = 150 °C
3.2 AC characteristics
Table 6 AC characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Total capacitive charge Qc – 6.9 – nC VR = 400 V, Tj = 150 °C, di/dt = 200 A/µs, IF ≤ IF,MAX Total capacitance C – 205 – pF VR = 1 V, f = 1 MHz, Tj = 25 °C – 12 – VR = 300 V, f = 1 MHz, Tj = 25 °C – 12 – VR = 600 V, f = 1 MHz, Tj = 25 °C
Final Datasheet 5 Rev. 2.0 , 2018-02-05 6th Generation CoolSiCTM IDDD04G65C6
4 Diagrams
Ptot = f(TC) IF = f(TC); RthJC,max ; Tj ≤ 175 °C; parameter: D = tP/T Figure 1 Power dissipation Figure 2 Max. forward current IF = f(VF); tp = 10 µs; parameter: Tj IF = f(VF); tp = 10 µs; parameter: Tj Figure 3 Typ. forward characteristics Figure 4 Typ. forward characteristics in surge current
Final Datasheet 7 Rev. 2.0 , 2018-02-05 6th Generation CoolSiCTM IDDD04G65C6 2 - 4 - 6 - 0 189.11 1025. 2 103.10 C B A CTBTATR jjjDIFF Treshold voltage (VTH): Differential resistance (RDIFF): VF = f(IF) Tj [°C]; -55 °C ≤ Tj ≤ 175 °C; IF ≤ х A Figure 10 Equivalent forward current curve Figure 11 Mathematical Equation EC = f(VR) Figure 9 Typ. capacitance stored energy
5 Simplified forward characteristic
FDIFFTHF IRVV TH DIFF
Final Datasheet 8 Rev. 2.0 , 2018-02-05 6th Generation CoolSiCTM IDDD04G65C6
6 Package outlines
Figure 12 Outlines of the package PG-HDSOP-10-1, dimensions in milimeters
6thGenerationCoolSiCª IDDD04G65C6 Rev.2.0,2018-02-26 RevisionHistory IDDD04G65C6 Revision:2018-02-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-02-26 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.