IDD23E60 INFINEON | Alldatasheet

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Technical content

2003-07-31Rev.2 Page 1 IDD23E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF 23 A VF 1.5 V Tjmax 175 °C Feature

  • 600 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • 175°C operating temperature
  • Easy paralleling Pin 1 PIN 2 PIN 3 NC C A Marking D23E60 Type Package Ordering Code IDD23E60 P-TO252-3-1 Q67040-S4381 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC=25°C TC=90°C IF 41.6 27.8 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 89 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 65 Power dissipation TC=25°C TC=90°C Ptot 115.4 65.4 W Operating and storage temperature Tj , Tstg -55...+175 °C Soldering temperature for 10s (according to JEDEC J-STD-020A) TS 255 °C

2003-07-31Rev.2 Page 2 IDD23E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.3 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 1900 µA Forward voltage drop IF=23A, Tj=25°C IF=23A, Tj=150°C VF 1.5 1.5 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2003-07-31Rev.2 Page 3 IDD23E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=400V, IF=23A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=23A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=23A, diF/dt=1000A/µs, Tj=150°C trr 120 164 170 ns Peak reverse current VR=400V, IF = 23A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =23A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =23A, diF/dt=1000A/µs, Tj=150°C Irrm 19.5 21.5 A Reverse recovery charge VR=400V, IF=23A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =23A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =23A, diF/dt=1000A/µs, Tj=150°C Qrr 970 1580 1770 nC Reverse recovery softness factor VR=400V, IF=23A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=23A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=23A, diF/dt=1000A/µs, Tj=150°C S 4.4 4.8

2003-07-31Rev.2 Page 4 IDD23E60

2 Diode forward current

IF = f(TC) parameter: Tj≤ 175°C 25 50 75 100 125 °C 175 TC A IF

1 Power dissipation

Ptot = f (TC) parameter: Tj ≤ 175 °C 25 50 75 100 125 °C 175 TC W 120 Ptot 3 Typ. diode forward current IF = f (VF) 0 0.5 1 1.5 V 2.5 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 V VF 11,5A 23A 46A

2003-07-31Rev.2 Page 5 IDD23E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 100 150 200 250 300 350 400 ns 500 trr 46A 23A 11.5A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 400V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 nC 2100 Qrr 11.5A 23A 46A 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt A Irr 46A 23A 11.5A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt S 46A 23A 11.5A

2003-07-31Rev.2 Page 6 IDD23E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IDD23E60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2003-07-31Rev.2 Page 7 IDD23E60 P-TO252 (D-Pak) symbol [mm] inch] m i nm a xm i nm a x A 6.40 6.73 0.2520 0.2650 B 5.25 5.50 0.2067 0.2165 D 0.63 0.89 0.0248 0.0350 E F 2.19 2.39 0.0862 0.0941 G 0.76 0.98 0.0299 0.0386 H 0.90 1.21 0.0354 0.0476 K 5.97 6.23 0.2350 0.2453 L 9.40 10.40 0.3701 0.4094 M 0.46 0.58 0.0181 0.0228 N 0.87 1.15 0.0343 0.0453 P 0.51 - 0.0201 - R 5.00 - 0.1969 - S 4.17 - 0.1642 - T 0.26 1.02 0.0102 0.0402 U- - - - 2.28 0.2520 dimensions

2003-07-31Rev.2 Page 8 IDD23E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.