IDD15E60_07 INFINEON | Alldatasheet

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Technical content

2007-04-24Rev.2.2 Page 1 IDD15E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF 15 A VF 1.5 V Tjmax 175 °C Feature

  • 600 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • 175°C operating temperature
  • Easy paralleling Pin 1 PIN 2,4 PIN 3 NC C A Marking D15E60 Type Package Ordering Code IDD15E60 PG-TO252-3-1 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC=25°C TC=90°C IF 29.2 19.6 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 60 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 45 Power dissipation TC=25°C TC=90°C Ptot 83.3 47.2 W Operating and storage temperature Tj , Tstg -55...+175 °C Soldering temperature reflow soldering, MSL3 TS 260 °C

2007-04-24Rev.2.2 Page 2 IDD15E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.8 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 1250 µA Forward voltage drop IF=15A, Tj=25°C IF=15A, Tj=150°C VF 1.5 1.5 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2007-04-24Rev.2.2 Page 3 IDD15E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C trr 124 131 ns Peak reverse current VR=400V, IF = 15 A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =15A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =15A, diF/dt=1000A/µs, Tj=150°C Irrm 13.7 16.4 19.3 A Reverse recovery charge VR=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =15A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =15A, diF/dt=1000A/µs, Tj=150°C Qrr 595 995 1104 nC Reverse recovery softness factor VR=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C S 3.6 4.3 4.5

2007-04-24Rev.2.2 Page 4 IDD15E60

2 Diode forward current

IF = f(TC) parameter: Tj≤ 175°C 25 50 75 100 125 °C 175 TC A IF

1 Power dissipation

P tot = f (TC) parameter: Tj ≤ 175 °C 25 50 75 100 125 °C 175 TC W Ptot 3 Typ. diode forward current I F = f (VF) 0.5 1 1.5 V 2.5 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 V VF 7.5A 15A 30A

2007-04 -24Rev.2.2 Page 5 IDD15E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 100 150 200 250 300 350 400 ns 500 trr 30A 15A 7.5A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 400V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 550 650 750 850 950 1050 1150 1250 nC 1450 Qrr 7.5A 15A 30A 7 Typ. reverse recovery current I rr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt A Irr 30A 15A 7.5A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt S 7,5A 15A 30A

2007-04-24Rev.2.2 Page 6 IDD15E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 K/W IDD15E60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2007-04-24Rev.2.2 Page 7 IDD15E60 PG-TO252 (D-Pak) symbol [mm] inch] m i nm a xm i nm a x A 6.40 6.73 0.2520 0.2650 B 5.25 5.50 0.2067 0.2165 D 0.63 0.89 0.0248 0.0350 E F 2.19 2.39 0.0862 0.0941 G 0.76 0.98 0.0299 0.0386 H 0.90 1.21 0.0354 0.0476 K 5.97 6.23 0.2350 0.2453 L 9.40 10.40 0.3701 0.4094 M 0.46 0.58 0.0181 0.0228 N 0.87 1.15 0.0343 0.0453 P 0.51 - 0.0201 - R 5.00 - 0.1969 - S 4.17 - 0.1642 - T 0.26 1.02 0.0102 0.0402 U- - - - 2.28 0.2520 dimensions

2007-04-24Rev.2.2 Page 8 IDD15E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.