IDD12SG60C INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery / No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC 1) for target applications
  • Halogen-free according to IEC 61249-2-21 definition thinQ! 3G Diode designed for fast switching applications like: Maximum ratings Parameter Symbol Conditions Unit Continuous forward current I F T C<130 °C 12 A I F,SM T C=25 °C, t p=10 ms 59 T C=150 °C, t p=10 ms 51 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 430 ∫i 2dt T C=25 °C, t p=10 ms 17 A2s T C=150 °C, t p=10 ms 12 Repetitive peak reverse voltage V RRM T j=25 °C 600 V Diode dv/dt ruggedness d v/ dt VR= 0….480 V 50 V/ns Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg -55 ... 175 °C Soldering temperature, reflow soldering (max) T sold reflow MSL1 260
  • Breakdown voltage tested at 20mA2)
  • Optimized for high temperature operation
  • Lowest Figure of Merit QC/IF i ²t value Value Surge non-repetitive forward current, sine halfwave
  • SMPS e.g.; CCM PFC
  • Motor Drives; Solar Applications; UPS V DC 600 V Q C 19 nC I F; T C< 130 °C 12 A Product Summary Type Package Marking Pin 1 Pin 2 Pin 3 IDD12SG60C PG-TO252-3 D12G60C n.c. A C Rev. 2.0 page 1 2010-03-19

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.2 K/W R thJA SMD version, device on PCB, minimal footprint -- 7 5 SMD version, device on PCB, 6 cm 2 cooling area5) -5 0- Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.05 mA, T j=25 °C 600 - - V Diode forward voltage V F I F=12 A, T j=25 °C - 1.8 2.1 I F=12 A, T j=150 °C - 2.2 - Reverse current I R V R=600 V, T j=25 °C - 1 100 µA V R=600 V, T j=150 °C - 4 1000 AC characteristics Total capacitive charge Q c -1 9- n C Switching time3) t c - - <10 ns Total capacitance C V R=1 V, f =1 MHz - 310 - pF V R=300 V, f =1 MHz -5 0- V R=600 V, f =1 MHz -5 0- 1) J-STD20 and JESD22 Values V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C Thermal resistance, junction - ambient 6) Only capacitive charge occuring, guaranteed by design. 4) Under worst case Zth conditions. 5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air 2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. Rev. 2.0 page 2 2010-03-19

1 Power dissipation 2 Diode forward current

P tot=f(T C); parameter: RthJC(max) I F=f(T C)4); T j≤175 °C; parameter: D = t p/T 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current mode I F=f(VF); t p=400 µs; parameter:T j I F=f(VF); t p=400 µs; parameter: T j 100 110 120 130 25 50 75 100 125 150 175 T C [°C] P tot [W] -55 °C 25 °C 100 °C 150 °C 175 °C 01234 V F[V] I F [A] -55 °C 25 °C 100 °C 150 °C 175 °C 02468 V F [V] I F [A] 0.7 0.5 0.3 0.1 100 125 25 50 75 100 125 150 175 T C [°C] I F [A] 2010-03-19Rev. 2.0 page 3

5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage Q C=f(di F/dt )6); I F≤I F,max I R=f(VR); parameter: T j 7 Typ. transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p); parameter: D = t P/T C =f(V R); T C=25 °C, f =1 MHz 10310210110010-1 100 150 200 250 300 350 400 V R [V] C [pF] 100 400 700 1000 di F/ dt [A/µs] Q c[nC] 25 °C 100 °C 150 °C 175 °C 101 100 10-1 10-2 10-3 100 200 300 400 500 600 V R [V] I R [µA] 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 101 100 10-1 10-2 10-3 t P [s] Z thJC [K/W] Rev. 2.0 page 4 2010-03-19

9 Typ. C stored energy E C=f(V R) 0 100 200 300 400 500 600 V R [V] E c [µJ] Rev. 2.0 page 5 2010-03-19

PG-TO252-3: Outline Dimensions in mm/inches Rev. 2.0 page 6 2010-03-19

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 2010-03-19