IDC10D120T8M INFINEON | Alldatasheet
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Technical content
Emitter Controlled 4 Medium Power Technology IDC10D120T8M
Datasheet 2 Rev. 2.1, 09.04.2021 Table of Contents
Datasheet 3 Rev. 2.1, 09.04.2021 Diode Chip in Emitter Controlled 4 Medium Power Technology Features:
- 1200V Emitter Controlled 4 technology 110µm chip
- Soft, fast switching
- Low reverse recovery charge
- Small temperature coefficient Recommended for:
- Low / medium power modules Applications:
- Low / medium power drives Chip Type VR IFn Die Size Package IDC10D120T8M 1200V 15A 3.30mm x 2.98mm Sawn on foil Mechanical Parameters Die size 3.30 x 2.98 mm2 Area total 9.83 Anode pad size See chip drawing Silicon thickness 110 µm Wafer size 200 mm Maximum possible chips per wafer 2818 Passivation frontside Photoimide Pad metal 3.2µm AlSiCu Backside metal Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, 500µm Reject ink dot size (valid for inked delivery form only) 0.65mm; max 1.2mm Storage environment (<12 months) for original and sealed MBB bags Ambient atmosphere air, temperature 17°C – 25°C for open MBB bags Acc. IEC 62258-3; Section 9.4 Storage Environment.
Datasheet 4 Rev. 2.1, 09.04.2021 Maximum Ratings In general, from reliability and lifetime point of view, the lower the operation junction temperature and/or the applied voltage, the greater the expected lifetime of any semiconductor device. Not subject to production test, specified by design. Parameter Symbol Value Unit Repetitive peak reverse voltage, Tvj=25°C VRRM 1200 V Continuous forward current, limited by Tvj max 1 IF - A Maximum repetitive forward current, tp limited by Tvj max IFRM 30 Junction temperature Tvj -40...+175 C Operating junction temperature Tvj op -40...+150 C Static Characteristics (tested on wafer), Tvj=25°C Parameter Symbol Conditions Value Unit min. typ. max. Reverse leakage current IR VR=1200V - - 3.5 µA Cathode-anode breakdown voltage VBR IR=0.25mA 1200 - - V Forward voltage drop VF IF=15A 1.35 1.70 2.05 Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Application example F3L15R12W2H3_B27 Rev. 2.0 1 Depending on thermal properties of assembly.
Datasheet 5 Rev. 2.1, 09.04.2021 Chip Drawing A = Anode pad A
Datasheet 6 Rev. 2.1, 09.04.2021 Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which are relevant for the application at package level, including RBSOA and SCSOA.
Description
AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Revision Subjects (major changes since last revision) Date 2.0 Final data sheet 22.08.2016 2.1 Editorial changes 09.04.2021
Datasheet 7 Rev. 2.1, 09.04.2021 Published by Infineon Technologies AG
81726 München, Germany
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Datasheet 8 Rev. 2.1, 09.04.2021 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG