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Features

  • OptiMOS™ power MOSFET for automotive applications
  • N-channel – Enhancement mode – Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Data Sheet Rev. 1.1 www.infineon.com/mosfets 2021-05-07 IAUZ40N06S5N105 VDS 60 V RDS(on) 10.5 mΩ ID (chip limited) 40 A Product Summary Type Package Marking IAUZ40N06S5N105 PG-TSDSON-8-32 5N06105 PG-TSDSON-8-32 Please read the Important Notice and Warnings at the end of this document 1 2 3 4 5 6 7 8

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 Table of Contents Data Sheet Rev. 1.1 2021-05-07

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 Maximum ratings at Tj=25 °C, unless otherwise specified Continuous drain current I D V GS=10 V, Chip limitation1,2) V GS=10V, DC current T a=85 °C, V GS=10 V, R thJA on 2s2p2,4) Pulsed drain current2) I D,pulse T C=25 °C, t p= 100 µs Avalanche energy, single pulse2) E AS I D=20 A Avalanche current, single pulse I AS – Gate source voltage V GS – Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg – IEC climatic category; DIN IEC 68-1 – – Data Sheet 3 Rev. 1.1 mJ 120 Value Unit A Parameter Symbol Conditions 2021-05-07 W ±20 -55 ... +175 55/175/56 A V

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 Thermal characteristics2) Parameter Symbol Conditions Unit min. typ. max. Thermal resistance, junction - case R thJC – – – 3.6 K/W Thermal resistance, junction - ambient4) R thJA – – 63.4 –

Electrical characteristics

at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Unit min. typ. max. Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 – – V Gate threshold voltage V GS(th) V DS=V GS, I D=13 µA 2.2 2.8 3.4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C – – 1 µA V DS=60 V, V GS=0 V, T j=100 °C2) – – 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V – – 100 nA Drain-source on-state resistance RDS(on) V GS=7 V, I D=10 A – 10.7 12.8 mΩ V GS=10 V, I D=20 A – 8.7 10.5 Gate resistance2) R G – – 1.28 – Ω Data Sheet 4 Rev. 1.1 2021-05-07 Values Values

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss – 845 1099 pF Output capacitance C oss – 192 250 Reverse transfer capacitance C rss – 12 18 Turn-on delay time t d(on) – 2.8 – ns Rise time t r – 1.0 – Turn-off delay time t d(off) – 3.9 – Fall time t f – 2.2 – Gate Charge Characteristics2) Gate to source charge Q gs – 4.1 5.3 nC Gate to drain charge Q gd – 2.8 4.1 Gate charge total Q g – 12.6 16.3 Gate plateau voltage V plateau – 4.9 – V Reverse Diode Diode continous forward current2) I S T C=25 °C – – 40 A Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs – – 120 Diode forward voltage V SD V GS=0 V, I F=20 A, T j=25 °C – 0.8 1.1 V Reverse recovery time2) t rr – 30 – ns Reverse recovery charge2) Q rr – 22.7 – nC Data Sheet Rev. 1.1 5 2021-05-07 Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=20 A, R G=3.5 Ω V DD=30 V, I D=20 A, V GS=0 to 10 V 2) The parameter is not subject to production testing – specified by design. 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. 3) Current is limited by the package. 1) Practically the current is limited by the overall system design including the customer-specific PCB. V R=40 V, I F=40 A, di F/dt =100 A/µs

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 Electrical characteristics diagrams

1 Power dissipation 2 Drain current

P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; parameter: tp Z thJC = f(t p); parameter: D=tp/T Data Sheet 6 Rev. 1.1 2021-05-07 1 µs 10 µs 100 µs 150 µs 0.1 100 1000 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 ZthJC [K/W] tp [s] 0 50 100 150 200 Ptot [W] TC [°C] DC current 0 50 100 150 200 ID [A] TC [°C]

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; parameter: VGS R DS(on) = f(I D); T j = 25 °C; parameter: VGS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V: parameter: Tj R DS(on) = f(T j); parameter: ID, VGS Data Sheet 7 Rev. 1.1 2021-05-07 VGS = 10 V, ID = 20 A VGS = 7 V, ID = 10 A -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] -55 °C 25 °C 175 °C 100 2 4 6 8 ID [A] VGS [V] 5 V 5.5 V 7 V 10 V 6 V 120 160 0 1 2 3 4 5 6 7 ID [A] VDS [V] 7 V 5 V 5.5 V 6 V 10 V 0 20 40 60 80 100 RDS(on) [mW] ID [A]

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS; parameter: I D C = f(V DS); V GS = 0 V; f = 1 MHz 11 Typical forward diode characteristics 12 Typ. avalanche characteristics I F = f(V SD ); parameter: T j I AS = f(t AV); parameter: T j(start) Data Sheet 8 Rev. 1.1 2021-05-07 25 °C 100 °C 150 °C 100 0.1 1 10 100 1000 IAV [A] tAV [µs] 25 °C 175 °C 100 101 102 103 IF [A] VSD [V] Ciss Coss Crss 101 102 103 104 0 20 40 60 C [pF] VDS [V] 13 µA 130 µA 1.5 1.75 2.25 2.5 2.75 3.25 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C]

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105

13 Typical avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j); parameter: ID V BR(DSS) = f(T j); I D_typ = 1 mA 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 20 A pulsed; parameter: V DD Data Sheet 9 Rev. 1.1 2021-05-07 -55 -15 25 65 105 145 VBR(DSS) [V] Tj [°C] 12 V 30 V 48 V 0 2 4 6 8 10 12 VGS [V] Qgate [nC] 40 A 20 A 10 A 25 75 125 175 EAS [mJ] Tj [°C] V GS Qgate Q gs Qgd Q g V GS Qgate Q gs Qgd Q g

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105 Package Outline Insert image Footprint Insert image Packaging Insert image Data Sheet 10 Rev. 1.1 2021-05-07

OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5N105

Revision History

Revision 1.0 Revision 1.1 Data Sheet 11 Rev. 1.1 Date 04.05.2021 07.05.2021 2021-05-07 Changes final data sheet marking (page 1)

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